Abstract: This paper presents a novel CMOS four-transistor
SRAM cell for very high density and low power embedded SRAM
applications as well as for stand-alone SRAM applications. This cell
retains its data with leakage current and positive feedback without
refresh cycle. The new cell size is 20% smaller than a conventional
six-transistor cell using same design rules. Also proposed cell uses
two word-lines and one pair bit-line. Read operation perform from
one side of cell, and write operation perform from another side of
cell, and swing voltage reduced on word-lines thus dynamic power
during read/write operation reduced. The fabrication process is fully
compatible with high-performance CMOS logic technologies,
because there is no need to integrate a poly-Si resistor or a TFT load.
HSPICE simulation in standard 0.25μm CMOS technology confirms
all results obtained from this paper.
Abstract: With rapid technology scaling, the proportion of the
static power consumption catches up with dynamic power
consumption gradually. To decrease leakage consumption is
becoming more and more important in low-power design. This paper
presents a power-gating scheme for P-DTGAL (p-type dual
transmission gate adiabatic logic) circuits to reduce leakage power
dissipations under deep submicron process. The energy dissipations of
P-DTGAL circuits with power-gating scheme are investigated in
different processes, frequencies and active ratios. BSIM4 model is
adopted to reflect the characteristics of the leakage currents. HSPICE
simulations show that the leakage loss is greatly reduced by using the
P-DTGAL with power-gating techniques.
Abstract: In this paper, we present the design and experimental
evaluation of complementary energy path adiabatic logic (CEPAL)
based 1 bit full adder circuit. A simulative investigation on the
proposed full adder has been done using VIRTUOSO SPECTRE
simulator of cadence in 0.18μm UMC technology and its
performance has been compared with the conventional CMOS full
adder circuit. The CEPAL based full adder circuit exhibits the energy
saving of 70% to the conventional CMOS full adder circuit, at 100
MHz frequency and 1.8V operating voltage.
Abstract: The resistive-inductive-capacitive behavior of long
interconnects which are driven by CMOS gates are presented in this
paper. The analysis is based on the ¤Ç-model of a RLC load and is
developed for submicron devices. Accurate and analytical
expressions for the output load voltage, the propagation delay and the
short circuit power dissipation have been proposed after solving a
system of differential equations which accurately describe the
behavior of the circuit. The effect of coupling capacitance between
input and output and the short circuit current on these performance
parameters are also incorporated in the proposed model. The
estimated proposed delay and short circuit power dissipation are in
very good agreement with the SPICE simulation with average
relative error less than 6%.
Abstract: This paper describes the design of a programmable
FSK-modulator based on VCO and its implementation in 0.35m
CMOS process. The circuit is used to transmit digital data at
100Kbps rate in the frequency range of 400-600MHz. The design
and operation of the modulator is discussed briefly. Further the
characteristics of PLL, frequency synthesizer, VCO and the whole
design are elaborated. The variation among the proposed and tested
specifications is presented. Finally, the layout of sub-modules, pin
configurations, final chip and test results are presented.
Abstract: A active inductor in CMOS techonology with a supply voltage of 1.8V is presented. The value of the inductance L can be in the range from 0.12nH to 0.25nH in high frequency(HF). The proposed active inductor is designed in TSMC 0.18-um CMOS technology. The power dissipation of this inductor can retain constant at all operating frequency bands and consume around 20mW from 1.8V power supply. Inductors designed by integrated circuit occupy much smaller area, for this reason,attracted researchers attention for more than decade. In this design we used Advanced Designed System (ADS) for simulating cicuit.
Abstract: RF performance of SOI CMOS device has attracted
significant amount of interest recently. In order to improve RF
parameters, Strained Si/Relaxed Si0.8Ge0.2 investigated as a
replacement for Si technology .Enhancement of carrier mobility
associated with strain engineering makes Strained Si a promising
candidate for improving RF performance of CMOS technology.
From the simulation, the cut-off frequency is estimated to be 224
GHZ, whereas in SOI at similar bias is about 188 GHZ. Therefore,
Strained Si exhibits 19% improvement in cut-off frequency over
similar Si counterpart. In this paper, Ion/Ioff ratio is studied as one of
the key parameters in logic and digital application. Strained Si/SiGe
demonstrates better Ion/Ioff characteristic than SOI, in similar channel
length of 100 nm.Another important key analog figures of merit such
as Early Voltage (VEA) ,transconductance vs drain current (gm /Ids)
are studied. They introduce the efficiency of the devices to convert
dc power into ac frequency.
Abstract: An active RC filters with a 880 / 1760 MHz dual bandwidth tuning ability is present for 60 GHz unlicensed band applications. A third order Butterworth low-pass filter utilizes two Cherry-Hooper amplifiers to satisfy the very high bandwidth requirements of an amplifier. The low-pass filter is fabricated in 90nm standard CMOS process. Drawing 6.7 mW from 1.2 V power supply, the low frequency gains of the filter are -2.5 and -4.1 dB, and the output third order intercept points (OIP3) are +2.2 and +1.9 dBm for the single channel and channel bonding conditions, respectively.
Abstract: This paper presents an optimized methodology to
folded cascode operational transconductance amplifier (OTA) design.
The design is done in different regions of operation, weak inversion,
strong inversion and moderate inversion using the gm/ID methodology
in order to optimize MOS transistor sizing.
Using 0.35μm CMOS process, the designed folded cascode OTA
achieves a DC gain of 77.5dB and a unity-gain frequency of 430MHz
in strong inversion mode. In moderate inversion mode, it has a 92dB
DC gain and provides a gain bandwidth product of around 69MHz.
The OTA circuit has a DC gain of 75.5dB and unity-gain frequency
limited to 19.14MHZ in weak inversion region.
Abstract: This paper presents a new true RMS-to-DC converter
circuit based on a square-root-domain squarer/divider. The circuit is
designed by employing up-down translinear loop and using of
MOSFET transistors that operate in strong inversion saturation
region. The converter offer advantages of two-quadrant input current,
low circuit complexity, low supply voltage (1.2V) and immunity
from the body effect. The circuit has been simulated by HSPICE.
The simulation results are seen to conform to the theoretical analysis
and shows benefits of the proposed circuit.
Abstract: Nowadays it is a trend for electronic circuit designers to
integrate all system components on a single-chip. This paper proposed
the design of a single-chip proportional to absolute temperature
(PTAT) sensor including a voltage reference circuit using CEDEC
0.18m CMOS Technology. It is a challenge to design asingle-chip
wide range linear response temperature sensor for many applications.
The channel widths between the compensation transistor and the
reference transistor are critical to design the PTAT temperature sensor
circuit. The designed temperature sensor shows excellent linearity
between -100°C to 200° and the sensitivity is about 0.05mV/°C.
The chip is designed to operate with a single voltage source of 1.6V.
Abstract: The practical implementation of audio-video coupled speech recognition systems is mainly limited by the hardware complexity to integrate two radically different information capturing devices with good temporal synchronisation. In this paper, we propose a solution based on a smart CMOS image sensor in order to simplify the hardware integration difficulties. By using on-chip image processing, this smart sensor can calculate in real time the X/Y projections of the captured image. This on-chip projection reduces considerably the volume of the output data. This data-volume reduction permits a transmission of the condensed visual information via the same audio channel by using a stereophonic input available on most of the standard computation devices such as PC, PDA and mobile phones. A prototype called VMIKE (Visio-Microphone) has been designed and realised by using standard 0.35um CMOS technology. A preliminary experiment gives encouraged results. Its efficiency will be further investigated in a large variety of applications such as biometrics, speech recognition in noisy environments, and vocal control for military or disabled persons, etc.
Abstract: This paper presents a new high speed simulation methodology to solve the long simulation time problem of CMOS image sensor matrix. Generally, for integrating the pixel matrix in SOC and simulating the system performance, designers try to model the pixel in various modeling languages such as VHDL-AMS, SystemC or Matlab. We introduce a new alternative method based on spice model in cadence design platform to achieve accuracy and reduce simulation time. The simulation results indicate that the pixel output voltage maximum error is at 0.7812% and time consumption reduces from 2.2 days to 13 minutes achieving about 240X speed-up for the 256x256 pixel matrix.
Abstract: Although silicon photonic devices provide a significantly larger bandwidth and dissipate a substantially less power than the electronic devices, they suffer from a large size due to the fundamental diffraction limit and the weak optical response of Si. A potential solution is to exploit Si plasmonics, which may not only miniaturize the photonic device far beyond the diffraction limit, but also enhance the optical response in Si due to the electromagnetic field confinement. In this paper, we discuss and summarize the recently developed metal-insulator-Si-insulator-metal nanoplasmonic waveguide as well as various passive and active plasmonic components based on this waveguide, including coupler, bend, power splitter, ring resonator, MZI, modulator, detector, etc. All these plasmonic components are CMOS compatible and could be integrated with electronic and conventional dielectric photonic devices on the same SOI chip. More potential plasmonic devices as well as plasmonic nanocircuits with complex functionalities are also addressed.
Abstract: An approach and its implementation in 0.18 m CMOS process of the multichannel ASIC for capacitive (up to 30 pF) sensors are described in the paper. The main design aim was to study an analog data-driven architecture. The design was done for an analog derandomizing function of the 128 to 16 structure. That means that the ASIC structure should provide a parallel front-end readout of 128 input analog sensor signals and after the corresponding fast commutation with appropriate arbitration logic their processing by means of 16 output chains, including analog-to-digital conversion. The principal feature of the ASIC is a low power consumption within 2 mW/channel (including a 9-bit 20Ms/s ADC) at a maximum average channel hit rate not less than 150 kHz.
Abstract: In this paper, a alternative structure method for
continuous time sigma delta modulator is presented. In this
modulator for implementation of integrators in loop filter second
generation current conveyors are employed. The modulator is
designed in CMOS technology and features low power consumption
(65db),
and with 180khZ bandwidth. Simulation results confirm that this
design is suitable for data converters.
Abstract: Current mode circuits like current conveyors are
getting significant attention in current analog ICs design due to their
higher band-width, greater linearity, larger dynamic range, simpler
circuitry, lower power consumption and less chip area. The second
generation current controlled conveyor (CCCII) has the advantage of
electronic adjustability over the CCII i.e. in CCCII; adjustment of the
X-terminal intrinsic resistance via a bias current is possible. The
presented approach is based on the CMOS implementation of second
generation positive (CCCII+), negative (CCCII-) and dual Output
Current Controlled Conveyor (DOCCCII) and its application as
Universal filter. All the circuits have been designed and simulated
using 65nm CMOS technology model parameters on Cadence
Virtuoso / Spectre using 1V supply voltage. Various simulations have
been carried out to verify the linearity between output and input
ports, range of operation frequency, etc. The outcomes show good
agreement between expected and experimental results.
Abstract: In this paper, for the first time, a two-dimensional
(2D) analytical drain current model for sub-100 nm multi-layered
gate material engineered trapezoidal recessed channel (MLGMETRC)
MOSFET: a novel design is presented and investigated using
ATLAS and DEVEDIT device simulators, to mitigate the large gate
leakages and increased standby power consumption that arise due to
continued scaling of SiO2-based gate dielectrics. The twodimensional
(2D) analytical model based on solution of Poisson-s
equation in cylindrical coordinates, utilizing the cylindrical
approximation, has been developed which evaluate the surface
potential, electric field, drain current, switching metric: ION/IOFF
ratio and transconductance for the proposed design. A good
agreement between the model predictions and device simulation
results is obtained, verifying the accuracy of the proposed analytical
model.
Abstract: In this paper, an ultra low power and low jitter 12bit
CMOS digitally controlled oscillator (DCO) design is presented.
Based on a ring oscillator implemented with low power Schmitt
trigger based inverters. Simulation of the proposed DCO using 32nm
CMOS Predictive Transistor Model (PTM) achieves controllable
frequency range of 550MHz~830MHz with a wide linearity and high
resolution. Monte Carlo simulation demonstrates that the time-period
jitter due to random power supply fluctuation is under 31ps and the
power consumption is 0.5677mW at 750MHz with 1.2V power
supply and 0.53-ps resolution. The proposed DCO has a good
robustness to voltage and temperature variations and better linearity
comparing to the conventional design.
Abstract: This paper deals with a power-conscious ANDEXOR- Inverter type logic implementation for a complex class of Boolean functions, namely Achilles- heel functions. Different variants of the above function class have been considered viz. positive, negative and pure horn for analysis and simulation purposes. The proposed realization is compared with the decomposed implementation corresponding to an existing standard AND-EXOR logic minimizer; both result in Boolean networks with good testability attribute. It could be noted that an AND-OR-EXOR type logic network does not exist for the positive phase of this unique class of logic function. Experimental results report significant savings in all the power consumption components for designs based on standard cells pertaining to a 130nm UMC CMOS process The simulations have been extended to validate the savings across all three library corners (typical, best and worst case specifications).