Abstract: In this paper, for the first time, a two-dimensional
(2D) analytical drain current model for sub-100 nm multi-layered
gate material engineered trapezoidal recessed channel (MLGMETRC)
MOSFET: a novel design is presented and investigated using
ATLAS and DEVEDIT device simulators, to mitigate the large gate
leakages and increased standby power consumption that arise due to
continued scaling of SiO2-based gate dielectrics. The twodimensional
(2D) analytical model based on solution of Poisson-s
equation in cylindrical coordinates, utilizing the cylindrical
approximation, has been developed which evaluate the surface
potential, electric field, drain current, switching metric: ION/IOFF
ratio and transconductance for the proposed design. A good
agreement between the model predictions and device simulation
results is obtained, verifying the accuracy of the proposed analytical
model.
Abstract: In this paper, an analytical modeling is presentated to
describe the channel noise in GME SGT/CGT MOSFET, based on
explicit functions of MOSFETs geometry and biasing conditions for
all channel length down to deep submicron and is verified with the
experimental data. Results shows the impact of various parameters
such as gate bias, drain bias, channel length ,device diameter and gate
material work function difference on drain current noise spectral
density of the device reflecting its applicability for circuit design
applications.