A Novel Four-Transistor SRAM Cell with Low Dynamic Power Consumption

This paper presents a novel CMOS four-transistor SRAM cell for very high density and low power embedded SRAM applications as well as for stand-alone SRAM applications. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 20% smaller than a conventional six-transistor cell using same design rules. Also proposed cell uses two word-lines and one pair bit-line. Read operation perform from one side of cell, and write operation perform from another side of cell, and swing voltage reduced on word-lines thus dynamic power during read/write operation reduced. The fabrication process is fully compatible with high-performance CMOS logic technologies, because there is no need to integrate a poly-Si resistor or a TFT load. HSPICE simulation in standard 0.25μm CMOS technology confirms all results obtained from this paper.

A Power-Gating Scheme to Reduce Leakage Power for P-type Adiabatic Logic Circuits

With rapid technology scaling, the proportion of the static power consumption catches up with dynamic power consumption gradually. To decrease leakage consumption is becoming more and more important in low-power design. This paper presents a power-gating scheme for P-DTGAL (p-type dual transmission gate adiabatic logic) circuits to reduce leakage power dissipations under deep submicron process. The energy dissipations of P-DTGAL circuits with power-gating scheme are investigated in different processes, frequencies and active ratios. BSIM4 model is adopted to reflect the characteristics of the leakage currents. HSPICE simulations show that the leakage loss is greatly reduced by using the P-DTGAL with power-gating techniques.

Explicit Delay and Power Estimation Method for CMOS Inverter Driving on-Chip RLC Interconnect Load

The resistive-inductive-capacitive behavior of long interconnects which are driven by CMOS gates are presented in this paper. The analysis is based on the ¤Ç-model of a RLC load and is developed for submicron devices. Accurate and analytical expressions for the output load voltage, the propagation delay and the short circuit power dissipation have been proposed after solving a system of differential equations which accurately describe the behavior of the circuit. The effect of coupling capacitance between input and output and the short circuit current on these performance parameters are also incorporated in the proposed model. The estimated proposed delay and short circuit power dissipation are in very good agreement with the SPICE simulation with average relative error less than 6%.

A New True RMS-to-DC Converter in CMOS Technology

This paper presents a new true RMS-to-DC converter circuit based on a square-root-domain squarer/divider. The circuit is designed by employing up-down translinear loop and using of MOSFET transistors that operate in strong inversion saturation region. The converter offer advantages of two-quadrant input current, low circuit complexity, low supply voltage (1.2V) and immunity from the body effect. The circuit has been simulated by HSPICE. The simulation results are seen to conform to the theoretical analysis and shows benefits of the proposed circuit.

Two New Low Power High Performance Full Adders with Minimum Gates

with increasing circuits- complexity and demand to use portable devices, power consumption is one of the most important parameters these days. Full adders are the basic block of many circuits. Therefore reducing power consumption in full adders is very important in low power circuits. One of the most powerconsuming modules in full adders is XOR/XNOR circuit. This paper presents two new full adders based on two new logic approaches. The proposed logic approaches use one XOR or XNOR gate to implement a full adder cell. Therefore, delay and power will be decreased. Using two new approaches and two XOR and XNOR gates, two new full adders have been implemented in this paper. Simulations are carried out by HSPICE in 0.18μm bulk technology with 1.8V supply voltage. The results show that the ten-transistors proposed full adder has 12% less power consumption and is 5% faster in comparison to MB12T full adder. 9T is more efficient in area and is 24% better than similar 10T full adder in term of power consumption. The main drawback of the proposed circuits is output threshold loss problem.

Image Sensor Matrix High Speed Simulation

This paper presents a new high speed simulation methodology to solve the long simulation time problem of CMOS image sensor matrix. Generally, for integrating the pixel matrix in SOC and simulating the system performance, designers try to model the pixel in various modeling languages such as VHDL-AMS, SystemC or Matlab. We introduce a new alternative method based on spice model in cadence design platform to achieve accuracy and reduce simulation time. The simulation results indicate that the pixel output voltage maximum error is at 0.7812% and time consumption reduces from 2.2 days to 13 minutes achieving about 240X speed-up for the 256x256 pixel matrix.

A Digitally Programmable Voltage-mode Multifunction Biquad Filter with Single-Output

This article proposes a voltage-mode multifunction filter using differential voltage current controllable current conveyor transconductance amplifier (DV-CCCCTA). The features of the circuit are that: the quality factor and pole frequency can be tuned independently via the values of capacitors: the circuit description is very simple, consisting of merely 1 DV-CCCCTA, and 2 capacitors. Without any component matching conditions, the proposed circuit is very appropriate to further develop into an integrated circuit. Additionally, each function response can be selected by suitably selecting input signals with digital method. The PSpice simulation results are depicted. The given results agree well with the theoretical anticipation.

Analysis of Current Mirror in 32nm MOSFET and CNTFET Technologies

There is need to explore emerging technologies based on carbon nanotube electronics as the MOS technology is approaching its limits. As MOS devices scale to the nano ranges, increased short channel effects and process variations considerably effect device and circuit designs. As a promising new transistor, the Carbon Nanotube Field Effect Transistor(CNTFET) avoids most of the fundamental limitations of the Traditional MOSFET devices. In this paper we present the analysis and comparision of a Carbon Nanotube FET(CNTFET) based 10(A current mirror with MOSFET for 32nm technology node. The comparision shows the superiority of the former in terms of 97% increase in output resistance,24% decrease in power dissipation and 40% decrease in minimum voltage required for constant saturation current. Furthermore the effect on performance of current mirror due to change in chirality vector of CNT has also been investigated. The circuit simulations are carried out using HSPICE model.

Realization of Electronically Tunable Current- Mode Multiphase Sinusoidal Oscillators Using CFTAs

An implementation of current-mode multiphase sinusoidal oscillators is presented. Using CFTA-based lossy integrators, odd and odd/even phase systems can be realized with following advantages. The condition of oscillation and frequency of oscillation can be orthogonally tuned. The high output impedances facilitate easy driving an external load without additional current buffers. The proposed MSOs provide odd or even phase signals that are equally spaced in phase and equal amplitude. The circuit requires one CFTA, one resistor and one grounded capacitor per phase without additional current amplifier. The results of PSPICE simulations using CMOS CFTA are included to verify theory.

Triple-input Single-output Voltage-mode Multifunction Filter Using Only Two Current Conveyors

A new voltage-mode triple-input single-output multifunction filter using only two current conveyors is presented. The proposed filter which possesses three inputs and single-output can generate all biquadratic filtering functions at the output terminal by selecting different input signal combinations. The validity of the proposed filter is verified through PSPICE simulations.

Realization of Electronically Tunable Currentmode First-order Allpass Filter and Its Application

This article presents a resistorless current-mode firstorder allpass filter based on second generation current controlled current conveyors (CCCIIs). The features of the circuit are that: the pole frequency can be electronically controlled via the input bias current: the circuit description is very simple, consisting of 2 CCCIIs and single grounded capacitor, without any external resistors and component matching requirements. Consequently, the proposed circuit is very appropriate to further develop into an integrated circuit. Low input and high output impedances of the proposed configuration enable the circuit to be cascaded in current-mode without additional current buffers. The PSpice simulation results are depicted. The given results agree well with the theoretical anticipation. The application example as a current-mode quadrature oscillator is included.

Schmitt Trigger Based SRAM Using Finfet Technology- Shorted Gate Mode

The most widely used semiconductor memory types are the Dynamic Random Access Memory (DRAM) and Static Random Access memory (SRAM). Competition among memory manufacturers drives the need to decrease power consumption and reduce the probability of read failure. A technology that is relatively new and has not been explored is the FinFET technology. In this paper, a single cell Schmitt Trigger Based Static RAM using FinFET technology is proposed and analyzed. The accuracy of the result is validated by means of HSPICE simulations with 32nm FinFET technology and the results are then compared with 6T SRAM using the same technology.

Accurate Crosstalk Analysis for RLC On-Chip VLSI Interconnect

This work proposes an accurate crosstalk noise estimation method in the presence of multiple RLC lines for the use in design automation tools. This method correctly models the loading effects of non switching aggressors and aggressor tree branches using resistive shielding effect and realistic exponential input waveforms. Noise peak and width expressions have been derived. The results obtained are at good agreement with SPICE results. Results show that average error for noise peak is 4.7% and for the width is 6.15% while allowing a very fast analysis.

A Low Power High Frequency CMOS RF Four Quadrant Analog Mixer

This paper describes a CMOS four-quadrant multiplier intended for use in the front-end receiver by utilizing the square-law characteristic of the MOS transistor in the saturation region. The circuit is based on 0.35 um CMOS technology simulated using HSPICE software. The mixer has a third-order inter the power consumption is 271uW from a single 1.2V power supply. One of the features of the proposed design is using two MOS transistors limitation to reduce the supply voltage, which leads to reduce the power consumption. This technique provides a GHz bandwidth response and low power consumption.

Transcutaneous Inductive Powering Links Based on ASK Modulation Techniques

This paper presented a modified efficient inductive powering link based on ASK modulator and proposed efficient class- E power amplifier. The design presents the external part which is located outside the body to transfer power and data to the implanted devices such as implanted Microsystems to stimulate and monitoring the nerves and muscles. The system operated with low band frequency 10MHZ according to industrial- scientific – medical (ISM) band to avoid the tissue heating. For external part, the modulation index is 11.1% and the modulation rate 7.2% with data rate 1 Mbit/s assuming Tbit = 1us. The system has been designed using 0.35-μm fabricated CMOS technology. The mathematical model is given and the design is simulated using OrCAD P Spice 16.2 software tool and for real-time simulation, the electronic workbench MULISIM 11 has been used.

A Low-Voltage Current-Mode Wheatstone Bridge using CMOS Transistors

This paper presents a new circuit arrangement for a current-mode Wheatstone bridge that is suitable for low-voltage integrated circuits implementation. Compared to the other proposed circuits, this circuit features severe reduction of the elements number, low supply voltage (1V) and low power consumption (

Universal Current-Mode OTA-C KHN Biquad

A universal current-mode biquad is described which represents an economical variant of well-known KHN (Kerwin, Huelsman, Newcomb) voltage-mode filter. The circuit consists of two multiple-output OTAs and of two grounded capacitors. Utilizing simple splitter of the input current and a pair of jumpers, all the basic 2nd-order transfer functions can be implemented. The principle is verified by Spice simulation on the level of a CMOS structure of OTAs.

Implementation of Second Order Current- Mode Quadrature Sinusoidal Oscillator with Current Controllability

The realization of current-mode quadrature oscillators using current controlled current conveyor transconductance amplifiers (CCCCTAs) and grounded capacitors is presented. The proposed oscillators can provide 2 sinusoidal output currents with 90º phase difference. It is enabled non-interactive dual-current control for both the condition of oscillation and the frequency of oscillation. High output impedances of the configurations enable the circuit to be cascaded without additional current buffers. The use of only grounded capacitors is ideal for integration. The circuit performances are depicted through PSpice simulations, they show good agreement to theoretical anticipation.

Fast and Efficient On-Chip Interconnection Modeling for High Speed VLSI Systems

Timing driven physical design, synthesis, and optimization tools need efficient closed-form delay models for estimating the delay associated with each net in an integrated circuit (IC) design. The total number of nets in a modern IC design has increased dramatically and exceeded millions. Therefore efficient modeling of interconnection is needed for high speed IC-s. This paper presents closed–form expressions for RC and RLC interconnection trees in current mode signaling, which can be implemented in VLSI design tool. These analytical model expressions can be used for accurate calculation of delay after the design clock tree has been laid out and the design is fully routed. Evaluation of these analytical models is several orders of magnitude faster than simulation using SPICE.

A New Time Dependent, High Temperature Analytical Model for the Single-electron Box in Digital Applications

Several models have been introduced so far for single electron box, SEB, which all of them were restricted to DC response and or low temperature limit. In this paper we introduce a new time dependent, high temperature analytical model for SEB for the first time. DC behavior of the introduced model will be verified against SIMON software and its time behavior will be verified against a newly published paper regarding step response of SEB.