Abstract: Digital systems are said to be constructed using basic logic gates. These gates are the NOR, NAND, AND, OR, EXOR & EXNOR gates. This paper presents a robust three transistors (3T) based NAND and NOR gates with precise output logic levels, yet maintaining equivalent performance than the existing logic structures. This new set of 3T logic gates are based on CMOS inverter and Pass Transistor Logic (PTL). The new universal logic gates are characterized by better speed and lower power dissipation which can be straightforwardly fabricated as memory ICs for high performance computer networks. The simulation tests were performed using standard BPTM 22nm process technology using SYNOPSYS HSPICE. The 3T NAND gate is evaluated using C17 benchmark circuit and 3T NOR is gate evaluated using a D-Latch. According to HSPICE simulation in 22 nm CMOS BPTM process technology under given conditions and at room temperature, the proposed 3T gates shows an improvement of 88% less power consumption on an average over conventional CMOS logic gates. The devices designed with 3T gates will make longer battery life by ensuring extremely low power consumption.
Abstract: The use of Quantum dots is a promising emerging
Technology for implementing digital system at the nano level. It is
effecient for attractive features such as faster speed , smaller size and
low power consumption than transistor technology. In this paper,
various Combinational and sequential logical structures - HALF
ADDER, SR Latch and Flip-Flop, D Flip-Flop preceding NAND,
NOR, XOR,XNOR are discussed based on QCA design, with
comparatively less number of cells and area. By applying these
layouts, the hardware requirements for a QCA design can be reduced.
These structures are designed and simulated using QCA Designer
Tool. By taking full advantage of the unique features of this
technology, we are able to create complete circuits on a single layer
of QCA. Such Devices are expected to function with ultra low
power Consumption and very high speeds.
Abstract: New methodologies for XOR-XNOR circuits are
proposed to improve the speed and power as these circuits are basic
building blocks of many arithmetic circuits. This paper evaluates and
compares the performance of various XOR-XNOR circuits. The
performance of the XOR-XNOR circuits based on TSMC 0.18μm
process models at all range of the supply voltage starting from 0.6V
to 3.3V is evaluated by the comparison of the simulation results
obtained from HSPICE. Simulation results reveal that the proposed
circuit exhibit lower PDP and EDP, more power efficient and faster
when compared with best available XOR-XNOR circuits in the
literature.
Abstract: with increasing circuits- complexity and demand to
use portable devices, power consumption is one of the most
important parameters these days. Full adders are the basic block of
many circuits. Therefore reducing power consumption in full adders
is very important in low power circuits. One of the most powerconsuming
modules in full adders is XOR/XNOR circuit. This paper
presents two new full adders based on two new logic approaches. The
proposed logic approaches use one XOR or XNOR gate to implement
a full adder cell. Therefore, delay and power will be decreased. Using
two new approaches and two XOR and XNOR gates, two new full
adders have been implemented in this paper. Simulations are carried
out by HSPICE in 0.18μm bulk technology with 1.8V supply voltage.
The results show that the ten-transistors proposed full adder has 12%
less power consumption and is 5% faster in comparison to MB12T
full adder. 9T is more efficient in area and is 24% better than similar
10T full adder in term of power consumption. The main drawback of
the proposed circuits is output threshold loss problem.