A New Time Dependent, High Temperature Analytical Model for the Single-electron Box in Digital Applications
Several models have been introduced so far for single
electron box, SEB, which all of them were restricted to DC response
and or low temperature limit. In this paper we introduce a new time
dependent, high temperature analytical model for SEB for the first
time. DC behavior of the introduced model will be verified against
SIMON software and its time behavior will be verified against a
newly published paper regarding step response of SEB.
[1] F. Zhang, R. Tang, Y.-B. Kim, "SET Based Nano Circuit Simulation
and Design Method Using HSPICE," Microelectronics Journal, 2005.
[2] W Y. S. Yu, H. S. Lee, and S. W. Hwang, "SPICE Macro-Modeling for
the Compact Simulation of Single Electron Circuits," Journal of
Korean Physical Society, vol. 33, pp. S269-S272, 1998.
[3] M. J. Sharifi and S. Paki, "A Simple SPICE Model for Single-Electron
Box and Its Applications," Proceedings of WASET, 37, 1054-1057,
2009.
[4] K. K. Likharev, "Single-Electron Devices and Their Applications,"
Proc. IEEE, vol. 87, pp. 606-632, 1999.
[5] M.J. Sharifi and F. Ahmadi Gooraji, "A new SPICE-compatible circuit
model for a single-electron BOX and its application to the bit error rate
and maximum operating frequency of logic gates", Submitted to Journal
of Circuits, Systems and Computers, 2010.
[6] C. Wasshuber, H. Kosina, S. Selberherr; SIMON-A Simulator for
Single-Electron Tunnel Devices and Circuits; Transaction on Computer
Aided Design of Integrated Circuits and Systems, Vol. 16, N0. 9, 1997
[7] M.J. Sharifi, "Transient Response of Single-electron Devices and Their
Time Constants", J. of. Korean Physical Society, Vol. 58, No. 1, Jan.
2011.
[1] F. Zhang, R. Tang, Y.-B. Kim, "SET Based Nano Circuit Simulation
and Design Method Using HSPICE," Microelectronics Journal, 2005.
[2] W Y. S. Yu, H. S. Lee, and S. W. Hwang, "SPICE Macro-Modeling for
the Compact Simulation of Single Electron Circuits," Journal of
Korean Physical Society, vol. 33, pp. S269-S272, 1998.
[3] M. J. Sharifi and S. Paki, "A Simple SPICE Model for Single-Electron
Box and Its Applications," Proceedings of WASET, 37, 1054-1057,
2009.
[4] K. K. Likharev, "Single-Electron Devices and Their Applications,"
Proc. IEEE, vol. 87, pp. 606-632, 1999.
[5] M.J. Sharifi and F. Ahmadi Gooraji, "A new SPICE-compatible circuit
model for a single-electron BOX and its application to the bit error rate
and maximum operating frequency of logic gates", Submitted to Journal
of Circuits, Systems and Computers, 2010.
[6] C. Wasshuber, H. Kosina, S. Selberherr; SIMON-A Simulator for
Single-Electron Tunnel Devices and Circuits; Transaction on Computer
Aided Design of Integrated Circuits and Systems, Vol. 16, N0. 9, 1997
[7] M.J. Sharifi, "Transient Response of Single-electron Devices and Their
Time Constants", J. of. Korean Physical Society, Vol. 58, No. 1, Jan.
2011.
@article{"International Journal of Electrical, Electronic and Communication Sciences:52195", author = "M.J. Sharifi", title = "A New Time Dependent, High Temperature Analytical Model for the Single-electron Box in Digital Applications", abstract = "Several models have been introduced so far for single
electron box, SEB, which all of them were restricted to DC response
and or low temperature limit. In this paper we introduce a new time
dependent, high temperature analytical model for SEB for the first
time. DC behavior of the introduced model will be verified against
SIMON software and its time behavior will be verified against a
newly published paper regarding step response of SEB.", keywords = "Single electron box, SPICE, SIMON, Timedependent, Circuit model.", volume = "5", number = "4", pages = "531-3", }