Abstract: WOLED is widely used as lighting for high efficacy and little power consumption. In this research, power factor testing between WOLED and fluorescent lamp to see which one is more efficient in consuming energy. Since both lamps use semiconductor components, so calculation of the power factor need to consider the effects of harmonics. Harmonic make bigger losses. The study is conducted by comparing the value of the power factor regardless of harmonics (DPF) and also by included the harmonics (TPF). The average value of DPF of fluorescent is 0.953 while WOLED is 0.972. The average value of TPF of fluorescent is 0.717 whereas WOLED is 0.933. So from the review of power factor WOLED is more energy efficient than fluorescent lamp.
Abstract: Composite nanostructures of metal
core/semiconductor shell (Au/CdS) configuration were prepared
using organometalic method. UV-Vis spectra for the Au/CdS colloids
show initially two well separated bands, corresponding to surface
plasmon of the Au core, and the exciton of CdS shell. The absorption
of CdS shell is enhanced, while the Au plasmon band is suppressed
as the shell thickness increases. The shell sizes were estimated from
the optical spectra using the effective mass approximation model
(EMA), and compared to the sizes of the Au core and CdS shell
measured by high resolution transmission electron microscope
(HRTEM). The changes in the absorption features are discussed in
terms of gradual increase in the coupling strength of the Au core
surface plasmon and the exciton in the CdS. leading to charge
transfer and modification of electron oscillation in Au core.
Abstract: Effect of temperature and light was investigated on a
thin film of organic semiconductor formyl-TIPPCu(II) deposited on a
glass substrate with preliminary evaporated gold electrodes. The
electrical capacitance and resistance of the fabricated device were
evaluated under the effect of temperature and light. The relative
capacitance of the fabricated sensor increased by 4.3 times by rising
temperature from 27 to 1870C, while under illumination up to 25000
lx, the capacitance of the Au/formyl-TIPPCu(II)/Au photo capacitive
sensor increased continuously by 13.2 times as compared to dark
conditions.
Abstract: Carrier mobility has become the most important
characteristic of high speed low dimensional devices. Due to
development of very fast switching semiconductor devices, speed of
computer and communication equipment has been increasing day by
day and will continue to do so in future. As the response of any
device depends on the carrier motion within the devices, extensive
studies of carrier mobility in the devices has been established
essential for the growth in the field of low dimensional devices.
Small-signal ac transport of degenerate two-dimensional hot
electrons in GaAs quantum wells is studied here incorporating
deformation potential acoustic, polar optic and ionized impurity
scattering in the framework of heated drifted Fermi-Dirac carrier
distribution. Delta doping is considered in the calculations to
investigate the effects of double delta doping on millimeter and submillimeter
wave response of two dimensional hot electrons in GaAs
nanostructures. The inclusion of delta doping is found to enhance
considerably the two dimensional electron density which in turn
improves the carrier mobility (both ac and dc) values in the GaAs
quantum wells thereby providing scope of getting higher speed
devices in future.
Abstract: Nanocrystalline thin film of Na0.1V2O5.nH2O xerogel
obtained by sol gel synthesis was used as gas sensor. Gas sensing
properties of different gases such as hydrogen, petroleum and
humidity were investigated. Applying XRD and TEM the size of the
nanocrystals is found to be 7.5 nm. SEM shows a highly porous
structure with submicron meter-sized voids present throughout the
sample. FTIR measurement shows different chemical groups
identifying the obtained series of gels. The sample was n-type
semiconductor according to the thermoelectric power and electrical
conductivity. It can be seen that the sensor response curves from
130oC to 150oC show a rapid increase in sensitivity for all types of
gas injection, low response values for heating period and the rapid
high response values for cooling period. This result may suggest that
this material is able to act as gas sensor during the heating and
cooling process.
Abstract: As in today's semiconductor industries test costs can make up to 50 percent of the total production costs, an efficient test error detection becomes more and more important. In this paper, we present a new machine learning approach to test error detection that should provide a faster recognition of test system faults as well as an improved test error recall. The key idea is to learn a classifier ensemble, detecting typical test error patterns in wafer test results immediately after finishing these tests. Since test error detection has not yet been discussed in the machine learning community, we define central problem-relevant terms and provide an analysis of important domain properties. Finally, we present comparative studies reflecting the failure detection performance of three individual classifiers and three ensemble methods based upon them. As base classifiers we chose a decision tree learner, a support vector machine and a Bayesian network, while the compared ensemble methods were simple and weighted majority vote as well as stacking. For the evaluation, we used cross validation and a specially designed practical simulation. By implementing our approach in a semiconductor test department for the observation of two products, we proofed its practical applicability.
Abstract: Each new semiconductor technology node
brings smaller transistors and wires. Although this makes
transistors faster, wires get slower. In nano-scale regime, the
standard copper (Cu) interconnect will become a major hurdle
for FPGA interconnect due to their high resistivity and
electromigration. This paper presents the comprehensive
evaluation of mixed CNT bundle interconnects and
investigates their prospects as energy efficient and high speed
interconnect for future FPGA routing architecture. All
HSPICE simulations are carried out at operating frequency of
1GHz and it is found that mixed CNT bundle implemented in
FPGAs as interconnect can potentially provide a substantial
delay and energy reduction over traditional interconnects at
32nm process technology.
Abstract: In this paper, we propose a novel metal oxide
semiconductor field effect transistor with L-shaped channel structure
(LMOS), and several type of L-shaped structures are also designed,
studied and compared with the conventional MOSFET device for the
same average gate length (Lavg). The proposed device electrical
characteristics are analyzed and evaluated by three dimension (3-D)
ISE-TCAD simulator. It can be confirmed that the LMOS devices
have higher on-state drain current and both lower drain-induced
barrier lowering (DIBL) and subthreshold swing (S.S.) than its
conventional counterpart has. In addition, the transconductance and
voltage gain properties of the LMOS are also improved.
Abstract: An embedded system for SEU(single event upset) test
needs to be designed to prevent system failure by high-energy particles
during measuring SEU. SEU is a phenomenon in which the data is changed temporary in semiconductor device caused by high-energy particles. In this paper, we present an embedded system for
SRAM(static random access memory) SEU test. SRAMs are on the DUT(device under test) and it is separated from control board which
manages the DUT and measures the occurrence of SEU. It needs to
have considerations for preventing system failure while managing the
DUT and making an accurate measurement of SEUs. We measure the occurrence of SEUs from five different SRAMs at three different
cyclotron beam energies 30, 35, and 40MeV. The number of SEUs of SRAMs ranges from 3.75 to 261.00 in average.
Abstract: One way for optimum loading of overdimensioning
conveyers is speed (capacity) decrement, with attention for
production capabilities and demands. At conveyers which drives with
three phase slip-ring induction motor, technically reasonable solution
for conveyer (driving motors) speed regulation is using constant
torque subsynchronous cascade with static semiconductor converter
and transformer for energy reversion to the power network. In the
paper is described mathematical model for parameter calculation of
two-motors 6 kV subsynchronous cascade. It is also demonstrated
that applying of this cascade gave several good properties, foremost
in electrical energy saving, also in improving of other energy
indexes, and finally that results in cost reduction of complete
electrical motor drive.
Abstract: A simple and dexterous in situ method was introduced to load CdS nanocrystals into organofunctionalized mesoporous, which used an ion-exchange method. The products were extensively characterized by combined spectroscopic methods. X- ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) demonstrated both the maintenance of pore symmetry (space group p6mm) of SBA-15 and the presence of CdS nanocrystals with uniform sizes of about 6 - 8 nm inside the functionalized SBA-15 channels. These mesoporous silica-supported CdS composites showed room temperature photoluminescence properties with a blue shift, indicating the quantum size effect of nanocrystalline CdS.
Abstract: In the present simulation work, an attempt is made to study the switching dynamics of an optically controlled 4HSiC thyristor power semiconductor device with the use of GaAs optically triggered power transistor. The half-cell thyristor has the forward breakdown of 200 V and reverse breakdown of more than 1000 V. The optically controlled thyristor has a rise time of 0.14 μs and fall time of 0.065 μs. The turn-on and turn-off delays are 0.1 μs and 0.06 μs, respectively. In addition, this optically controlled thyristor is used as a control switch for the DC-DC Boost converter. The pn-diode used for the converter has the forward drop of 2.8 V and reverse breakdown of around 400 V.
Abstract: In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anneal temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to VTH and ILeak are halo implant dose (40%) and S/D implant dose (52%) respectively. Whereas the second ranking factor affecting VTH and ILeak are oxide growth temperature (32%) and halo implant dose (34%) respectively. The results show that after optimizations approaches is -0.157V at ILeak=0.195mA/μm.
Abstract: In this paper, we analyze the problem of quasiballistic electron transport in ultra small of mercury -cadmiumtelluride (Hg0.8Cd0.2Te -MCT) n+-n- n+ devices from hydrodynamic point view. From our study, we note that, when the size of the active layer is low than 0.1μm and for low bias application( ( ≥ 9mV), the quasi-ballistic transport has an important effect.
Abstract: Multi-level voltage source inverters offer several
advantages such as; derivation of a refined output voltage with
reduced total harmonic distortion (THD), reduction of voltage ratings
of the power semiconductor switching devices and also the reduced
electro-magnetic-interference problems etc. In this paper, new
carrier-overlapped phase-disposition or sub-harmonic sinusoidal
pulse width modulation (CO-PD-SPWM) and also the carrieroverlapped
phase-disposition space vector modulation (CO-PDSVPWM)
schemes for a six-level diode-clamped inverter topology
are proposed. The principle of the proposed PWM schemes is similar
to the conventional PD-PWM with a little deviation from it in the
sense that the triangular carriers are all overlapped. The overlapping
of the triangular carriers on one hand results in an increased number
of switchings, on the other hand this facilitates an improved spectral
performance of the output voltage. It is demonstrated through
simulation studies that the six-level diode-clamped inverter with the
use of CO-PD-SPWM and CO-PD-SVPWM proposed in this paper is
capable of generating multiple levels in its output voltage. The
advantages of the proposed PWM schemes can be derived to benefit,
especially at lower modulation indices of the inverter and hence this
aspect of the proposed PWM schemes can be well exploited in high
power applications requiring low speeds of operation of the drive.
Abstract: Induction motors are being used in greater numbers
throughout a wide variety of industrial and commercial applications
because it provides many benefits and reliable device to convert the
electrical energy into mechanical motion. In some application it-s
desired to control the speed of the induction motor. Because of the
physics of the induction motor the preferred method of controlling its
speed is to vary the frequency of the AC voltage driving the motor. In
recent years, with the microcontroller incorporated into an appliance
it becomes possible to use it to generate the variable frequency AC
voltage to control the speed of the induction motor.
This study investigates the microcontroller based variable
frequency power inverter. the microcontroller is provide the variable
frequency pulse width modulation (PWM) signal that control the
applied voltage on the gate drive, which is provides the required
PWM frequency with less harmonics at the output of the power
inverter.
The fully controlled bridge voltage source inverter has been
implemented with semiconductors power devices isolated gate
bipolar transistor (IGBT), and the PWM technique has been
employed in this inverter to supply the motor with AC voltage.
The proposed drive system for three & single phase power inverter
is simulated using Matlab/Simulink. The Matlab Simulation Results
for the proposed system were achieved with different SPWM. From
the result a stable variable frequency inverter over wide range has
been obtained and a good agreement has been found between the
simulation and hardware of a microcontroller based single phase
inverter.
Abstract: In this article, a high vacuum system for the evaporation of organic semiconductors is introduced and a mathematical model is given. Based on the exact input output linearization a deposition rate controller is designed and tested with different evaporation materials.
Abstract: A device analysis of the photoconductive
semiconductor switch is carried out to investigate distribution of
electric field and carrier concentrations as well as the current density
distribution. The operation of this device was then investigated as a
switch operating in X band. It is shown that despite the presence of
symmetry geometry, switch current density of the on-state steady
state mode is distributed asymmetrically throughout the device.
Abstract: The optical properties of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers are numerically studied using ISE TCAD (Integrated System Engineering) simulation program. Improvements in laser optical performance have been achieved using quaternary alloy as superlattice layers in InGaN/GaN laser diodes. Lower threshold current of 18 mA and higher output power and slope efficiency of 22 mW and 1.6 W/A, respectively, at room temperature have been obtained. The laser structure with InAlGaN quaternary alloys as an electron blocking layer was found to provide better laser performance compared with the ternary AlxGa1-xN blocking layer.
Abstract: Magnetic and semiconductor nanomaterials exhibit
novel magnetic and optical properties owing to their unique size and
shape-dependent effects. With shrinking the size down to nanoscale
region, various anomalous properties that normally not present in bulk
start to dominate. Ability in harnessing of these anomalous properties
for the design of various advance electronic devices is strictly
dependent on synthetic strategies. Hence, current research has focused
on developing a rational synthetic control to produce high quality
nanocrystals by using organometallic approach to tune both size and
shape of the nanomaterials. In order to elucidate the growth
mechanism, transmission electron microscopy was employed as a
powerful tool in performing real time-resolved morphologies and
structural characterization of magnetic (Fe3O4) and semiconductor
(ZnO) nanocrystals. The current synthetic approach is found able to
produce nanostructures with well-defined shapes. We have found that
oleic acid is an effective capping ligand in preparing oxide-based
nanostructures without any agglomerations, even at high temperature.
The oleate-based precursors and capping ligands are fatty acid
compounds, which are respectively originated from natural palm oil
with low toxicity. In comparison with other synthetic approaches in
producing nanostructures, current synthetic method offers an effective
route to produce oxide-based nanomaterials with well-defined shapes
and good monodispersity. The nanocystals are well-separated with
each other without any stacking effect. In addition, the as-synthesized
nanopellets are stable in terms of chemically and physically if
compared to those nanomaterials that are previous reported. Further
development and extension of current synthetic strategy are being
pursued to combine both of these materials into nanocomposite form
that will be used as “smart magnetic nanophotocatalyst" for industry
waste water treatment.