Performance of InGaN/GaN Laser Diode Based on Quaternary Alloys Stopper and Superlattice Layers
The optical properties of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers are numerically studied using ISE TCAD (Integrated System Engineering) simulation program. Improvements in laser optical performance have been achieved using quaternary alloy as superlattice layers in InGaN/GaN laser diodes. Lower threshold current of 18 mA and higher output power and slope efficiency of 22 mW and 1.6 W/A, respectively, at room temperature have been obtained. The laser structure with InAlGaN quaternary alloys as an electron blocking layer was found to provide better laser performance compared with the ternary AlxGa1-xN blocking layer.
[1] M. Miyoshi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata , M.
Tanaka and O. Oda, "High-electron-mobility AlGaN/AlN/GaN
heterostructures grown on 100-mm-diam epitaxial AlN/sapphire
templates by metalorganic vapor phase epitaxy" Appl. Phys. Lett.85,
p.1710, July 2004.
[2] L X Wang, M C Wang, X G Hu, X J Wang, S T Chen, G. Jiao , P J Li, P Y
Zeng and M J Li, "Improved DC and RF performance of AlGaN/GaN
HEMTs grown by MOCVD on sapphire substrates"
Solid-StateElectronics, 49, pp. 1387-1390, Aug 2005 .
[3] V. Adivarahan, S. Wu, P J Zhang, A. Chitnis, M. Shatalov, V. Mandavilli,
R. Gaska and A M Khan,"High-efficiency 269 nm emission deep
ultraviolet light-emitting diodes" Appl.Phys.Lett, 84, p.4762, May 2004
.
[4] T. Nishida, H. Saito and N. Kobayashi, "Efficient and high-power
AlGaN-based ultraviolet light-emitting diode grown on bulk GaN"
Appl.Phys.Lett, 79, p.711, June 2001.
[5] C. Skierbiszewski, P. Perlin, I. Grzegory, R. Z Wasilewski, M. Siekacz,
A. Feduniewicz, P. Wisniewski, J. Borysiuk, P. Prystawko, G. Kamler, T.
Suski and S. Porowski," High power blue-violet InGaN laser diodes
grown on bulk GaN substrates by plasma-assisted molecular beam
epitaxy" Semiconductor. Sci. Tech, vol 20,p. 809, June 2005.
[6] H Hirayama, "Quaternary InAlGaN-based high-efficiency ultraviolet
light-emitting diodes" J.Appl.Phys, 97, p.091101, April 2005.
[7] K H Cho, H K Lee, W S Kim, S K Park, H Y Cho and H J Lee, "Influence
of growth temperature and reactor pressure on microstructural and optical
properties of InAlGaN quaternary epilayers" J.Crystal Growth, 267,pp.
67-73, 2004 ,
[8] C H Chen, L Y Huang, Y F Chen, H X Jiang and J Y Lin, "Mechanism of
enhanced luminescence in InxAlyGa1-x-yN quaternary
alloys",Appl.Phys.Lett, 80,p.1397, February 2002..
[9] A Yasan, R. McClintock, K. Mayes, S. R Darvish, H. Zhang, P. Kung, M.
Razeghi, K S Lee and Y J Han, "Comparison of ultraviolet light-emitting
diodes with peak emission at 340 nm grown on GaN substrate and
sapphire" Appl.Phys.Lett, 81,p.2151, July 2002 .
[10] E. Monroy, N. Gogneau, D. Jalabert, E. Bellet-Amalric, Y. Hori, F.
Enjalbert, S L Dang and B. Daudin., "In incorporation during the growth
of quaternary III-nitride compounds by plasma-assisted molecular beam
epitaxy" Appl.Phys.Lett, 82,p.2242, February 2003 .
[11] C. Skierbiszewski, Z. R. Wasilewski , M. Siekacz, A. Feduniewicz, P.
Perlin, P. Wisniewski, J. Borysiuk, I. Grzegory, M. Leszczynski, T. Suski,
and S. Porowskib) "Blue-violet InGaN laser diodes grown on bulk GaN
substrates by plasma-assisted molecular-beam epitaxy", High Pressure
Research Center, PAS, Sokołowska 29/37, 01-142 Warsaw, Poland
Appl.Phys.Lett., 86, 011114, December2005.
[12] Integrated System Engineering (ISE TCAD) AG, Switzerland,
http://www.synopsys.com.
[13] S. M. Thahab, H. Abu Hassan and Z. Hassan, "Performance and optical
characteristic of InGaN MQWs laser diodes" Opt. Exp., 15, No.5, p.2380
March (2007).
[1] M. Miyoshi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata , M.
Tanaka and O. Oda, "High-electron-mobility AlGaN/AlN/GaN
heterostructures grown on 100-mm-diam epitaxial AlN/sapphire
templates by metalorganic vapor phase epitaxy" Appl. Phys. Lett.85,
p.1710, July 2004.
[2] L X Wang, M C Wang, X G Hu, X J Wang, S T Chen, G. Jiao , P J Li, P Y
Zeng and M J Li, "Improved DC and RF performance of AlGaN/GaN
HEMTs grown by MOCVD on sapphire substrates"
Solid-StateElectronics, 49, pp. 1387-1390, Aug 2005 .
[3] V. Adivarahan, S. Wu, P J Zhang, A. Chitnis, M. Shatalov, V. Mandavilli,
R. Gaska and A M Khan,"High-efficiency 269 nm emission deep
ultraviolet light-emitting diodes" Appl.Phys.Lett, 84, p.4762, May 2004
.
[4] T. Nishida, H. Saito and N. Kobayashi, "Efficient and high-power
AlGaN-based ultraviolet light-emitting diode grown on bulk GaN"
Appl.Phys.Lett, 79, p.711, June 2001.
[5] C. Skierbiszewski, P. Perlin, I. Grzegory, R. Z Wasilewski, M. Siekacz,
A. Feduniewicz, P. Wisniewski, J. Borysiuk, P. Prystawko, G. Kamler, T.
Suski and S. Porowski," High power blue-violet InGaN laser diodes
grown on bulk GaN substrates by plasma-assisted molecular beam
epitaxy" Semiconductor. Sci. Tech, vol 20,p. 809, June 2005.
[6] H Hirayama, "Quaternary InAlGaN-based high-efficiency ultraviolet
light-emitting diodes" J.Appl.Phys, 97, p.091101, April 2005.
[7] K H Cho, H K Lee, W S Kim, S K Park, H Y Cho and H J Lee, "Influence
of growth temperature and reactor pressure on microstructural and optical
properties of InAlGaN quaternary epilayers" J.Crystal Growth, 267,pp.
67-73, 2004 ,
[8] C H Chen, L Y Huang, Y F Chen, H X Jiang and J Y Lin, "Mechanism of
enhanced luminescence in InxAlyGa1-x-yN quaternary
alloys",Appl.Phys.Lett, 80,p.1397, February 2002..
[9] A Yasan, R. McClintock, K. Mayes, S. R Darvish, H. Zhang, P. Kung, M.
Razeghi, K S Lee and Y J Han, "Comparison of ultraviolet light-emitting
diodes with peak emission at 340 nm grown on GaN substrate and
sapphire" Appl.Phys.Lett, 81,p.2151, July 2002 .
[10] E. Monroy, N. Gogneau, D. Jalabert, E. Bellet-Amalric, Y. Hori, F.
Enjalbert, S L Dang and B. Daudin., "In incorporation during the growth
of quaternary III-nitride compounds by plasma-assisted molecular beam
epitaxy" Appl.Phys.Lett, 82,p.2242, February 2003 .
[11] C. Skierbiszewski, Z. R. Wasilewski , M. Siekacz, A. Feduniewicz, P.
Perlin, P. Wisniewski, J. Borysiuk, I. Grzegory, M. Leszczynski, T. Suski,
and S. Porowskib) "Blue-violet InGaN laser diodes grown on bulk GaN
substrates by plasma-assisted molecular-beam epitaxy", High Pressure
Research Center, PAS, Sokołowska 29/37, 01-142 Warsaw, Poland
Appl.Phys.Lett., 86, 011114, December2005.
[12] Integrated System Engineering (ISE TCAD) AG, Switzerland,
http://www.synopsys.com.
[13] S. M. Thahab, H. Abu Hassan and Z. Hassan, "Performance and optical
characteristic of InGaN MQWs laser diodes" Opt. Exp., 15, No.5, p.2380
March (2007).
@article{"International Journal of Chemical, Materials and Biomolecular Sciences:55386", author = "S. M. Thahab and H. Abu Hassan and Z. Hassan", title = "Performance of InGaN/GaN Laser Diode Based on Quaternary Alloys Stopper and Superlattice Layers", abstract = "The optical properties of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers are numerically studied using ISE TCAD (Integrated System Engineering) simulation program. Improvements in laser optical performance have been achieved using quaternary alloy as superlattice layers in InGaN/GaN laser diodes. Lower threshold current of 18 mA and higher output power and slope efficiency of 22 mW and 1.6 W/A, respectively, at room temperature have been obtained. The laser structure with InAlGaN quaternary alloys as an electron blocking layer was found to provide better laser performance compared with the ternary AlxGa1-xN blocking layer.
", keywords = "Nitride semiconductors, InAlGaN quaternary, laserdiode, superlattice.", volume = "3", number = "7", pages = "345-5", }
