Quasi-ballistic Transport in Submicron Hg0.8Cd0.2Te Diodes: Hydrodynamic Modeling

In this paper, we analyze the problem of quasiballistic electron transport in ultra small of mercury -cadmiumtelluride (Hg0.8Cd0.2Te -MCT) n+-n- n+ devices from hydrodynamic point view. From our study, we note that, when the size of the active layer is low than 0.1μm and for low bias application( ( ≥ 9mV), the quasi-ballistic transport has an important effect.

• M. Daoudi
• A. Belghachi
• L. Varani

• Hg0.8Cd0.2Te semiconductor
• Hydrodynamicmode
• Quasi-ballistic transport
• Submicron diode

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