Abstract: Nanocrystals (NC) alloyed composite CdSxSe1-x(x=0
to 1) have been prepared using the chemical solution deposition
technique. The energy band gap of these alloyed nanocrystals of
approximately the same size, have been determined by scanning
tunneling spectroscopy (STS) technique at room temperature. The
values of the energy band gap obtained directly using STS are
compared to those measured by optical spectroscopy. Increasing the
molar fraction ratio x from 0 to 1 causes clearly observed increase in
the band gap of the alloyed composite nanocrystal. Vegard-s law was
applied to calculate the parameters of the effective mass
approximation (EMA) model and the dimension obtained were
compared to the values measured by STM. The good agreement of
the calculated and measured values is a direct result of applying
Vegard's law in the nanocomposites.
Abstract: It is important to predict yield in semiconductor test process in order to increase yield. In this study, yield prediction means finding out defective die, wafer or lot effectively. Semiconductor test process consists of some test steps and each test includes various test items. In other world, test data has a big and complicated characteristic. It also is disproportionably distributed as the number of data belonging to FAIL class is extremely low. For yield prediction, general data mining techniques have a limitation without any data preprocessing due to eigen properties of test data. Therefore, this study proposes an under-sampling method using support vector machine (SVM) to eliminate an imbalanced characteristic. For evaluating a performance, randomly under-sampling method is compared with the proposed method using actual semiconductor test data. As a result, sampling method using SVM is effective in generating robust model for yield prediction.
Abstract: Vertical ZnO nanowire array films were synthesized
based on aqueous method for sensing applications. ZnO nanowires
were investigated structurally using X-ray diffraction (XRD) and
scanning electron microscopy (SEM). The gas-sensing properties of
ZnO nanowires array films are studied. It is found that the ZnO
nanowires array film sensor exhibits excellent sensing properties
towards O2 and CO2 at 100 °C with the response time shorter than 5
s. High surface area / volume ratio of vertical ZnO nanowire and high
mobility accounts for the fast response and recovery. The sensor
response was measured in the range from 100 to 500 ppm O2 and CO2
in this study.
Abstract: Carbon nanotubes (CNTs) possess unique structural,
mechanical, thermal and electronic properties, and have been
proposed to be used for applications in many fields. However, to
reach the full potential of the CNTs, many problems still need to be
solved, including the development of an easy and effective
purification procedure, since synthesized CNTs contain impurities,
such as amorphous carbon, carbon nanoparticles and metal particles.
Different purification methods yield different CNT characteristics
and may be suitable for the production of different types of CNTs. In
this study, the effect of different purification chemicals on carbon
nanotube quality was investigated. CNTs were firstly synthesized by
chemical vapor deposition (CVD) of acetylene (C2H2) on a
magnesium oxide (MgO) powder impregnated with an iron nitrate
(Fe(NO3)3·9H2O) solution. The synthesis parameters were selected
as: the synthesis temperature of 800°C, the iron content in the
precursor of 5% and the synthesis time of 30 min. The liquid phase
oxidation method was applied for the purification of the synthesized
CNT materials. Three different acid chemicals (HNO3, H2SO4, and
HCl) were used in the removal of the metal catalysts from the
synthesized CNT material to investigate the possible effects of each
acid solution to the purification step. Purification experiments were
carried out at two different temperatures (75 and 120 °C), two
different acid concentrations (3 and 6 M) and for three different time
intervals (6, 8 and 15 h). A 30% H2O2 : 3M HCl (1:1 v%) solution
was also used in the purification step to remove both the metal
catalysts and the amorphous carbon. The purifications using this
solution were performed at the temperature of 75°C for 8 hours.
Purification efficiencies at different conditions were evaluated by
thermogravimetric analysis. Thermal and electrical properties of
CNTs were also determined. It was found that the obtained electrical
conductivity values for the carbon nanotubes were typical for organic
semiconductor materials and thermal stabilities were changed
depending on the purification chemicals.
Abstract: Parallel Prefix addition is a technique for improving
the speed of binary addition. Due to continuing integrating intensity
and the growing needs of portable devices, low-power and highperformance
designs are of prime importance. The classical parallel
prefix adder structures presented in the literature over the years
optimize for logic depth, area, fan-out and interconnect count of logic
circuits. In this paper, a new architecture for performing 8-bit, 16-bit
and 32-bit Parallel Prefix addition is proposed. The proposed prefix
adder structures is compared with several classical adders of same
bit width in terms of power, delay and number of computational
nodes. The results reveal that the proposed structures have the least
power delay product when compared with its peer existing Prefix
adder structures. Tanner EDA tool was used for simulating the adder
designs in the TSMC 180 nm and TSMC 130 nm technologies.
Abstract: In this work, an organic compound 5,10,15,20-
Tetrakis(3,5-di-tertbutylphenyl)porphyrinatocopper(II) (TDTBPPCu)
is studied as an active material for thin film electronic devices. To
investigate the electrical properties of TDTBPPCu, junction of
TDTBPPCu with heavily doped n-Si and Al is fabricated.
TDTBPPCu film was sandwiched between Al and n-Si electrodes.
Various electrical parameters of TDTBPPCu are determined. The
current-voltage characteristics of the junction are nonlinear,
asymmetric and show rectification behavior, which gives the clue of
formation of depletion region. This behavior indicates the potential
of TDTBPPCu for electronics applications. The current-voltage and
capacitance-voltage techniques are used to find the different
electronic parameters.
Abstract: The most widely used semiconductor memory types
are the Dynamic Random Access Memory (DRAM) and Static
Random Access memory (SRAM). Competition among memory
manufacturers drives the need to decrease power consumption and
reduce the probability of read failure. A technology that is relatively
new and has not been explored is the FinFET technology. In this
paper, a single cell Schmitt Trigger Based Static RAM using FinFET
technology is proposed and analyzed. The accuracy of the result is
validated by means of HSPICE simulations with 32nm FinFET
technology and the results are then compared with 6T SRAM using
the same technology.
Abstract: Semiconductor detector arrays are widely used in
high-temperature plasma diagnostics. They have a fast response,
which allows observation of many processes and instabilities in
tokamaks. In this paper, there are reviewed several diagnostics based
on semiconductor arrays as cameras, AXUV photodiodes (referred
often as fast “bolometers") and detectors of both soft X-rays and
visible light installed on the COMPASS tokamak recently. Fresh
results from both spring and summer campaigns in 2012 are
introduced. Examples of the utilization of the detectors are shown on
the plasma shape determination, fast calculation of the radiation
center, two-dimensional plasma radiation tomography in different
spectral ranges, observation of impurity inflow, and also on
investigation of MHD activity in the COMPASS tokamak discharges.
Abstract: The technical realization of data transmission using
glass fiber began after the development of diode laser in year 1962.
The erbium doped fiber amplifiers (EDFA's) in high speed networks
allow information to be transmitted over longer distances without
using of signal amplification repeaters. These kinds of fibers are
doped with erbium atoms which have energy levels in its atomic
structure for amplifying light at 1550nm. When a carried signal wave
at 1550nm enters the erbium fiber, the light stimulates the excited
erbium atoms which pumped with laser beam at 980nm as additional
light. The wavelength and intensity of the semiconductor lasers
depend on the temperature of active zone and the injection current.
The present paper shows the effect of the diode lasers temperature
and injection current on the optical amplification. From the results of
in- and output power one may calculate the max. optical gain by
erbium doped fiber amplifier.
Abstract: In this paper, by exploiting a single semiconductor
optical amplifier-Mach Zehnder Interferometer (SOA-MZI), an
integratable all-optical flip-flop (AOFF) is proposed. It is composed
of a SOA-MZI with a bidirectional coupler at the output. Output
signals of both bar and crossbar of the SOA-MZI is fed back to SOAs
located in the arms of the Mach-Zehnder Interferometer (MZI). The
injected photon-rates to the SOAs are modulated by feedback signals
in order to form optical flip-flop. According to numerical analysis,
Gaussian optical pulses with the energy of 15.2 fJ and 20 ps duration
with the full width at half-maximum criterion, can switch the states of
the SR-AOFF. Also simulation results show that the SR-AOFF has
the contrast ratio of 8.5 dB between two states with the transition
time of nearly 20 ps.
Abstract: In this paper, based on the coupled-mode and carrier rate equations, derivation of a dynamic model and numerically analysis of a MQW chirped DFB-SOA all-optical flip-flop is done precisely. We have analyzed the effects of strains of QW and MQW and cross phase modulation (XPM) on the dynamic response, and rise and fall times of the DFB-SOA all optical flip flop. We have shown that strained MQW active region in under an optimized condition into a DFB-SOA with chirped grating can improve the switching ON speed limitation in such a of the device, significantly while the fall time is increased. The values of the rise times for such an all optical flip-flop, are obtained in an optimized condition, areas tr=255ps.
Abstract: The burst noise is a kind of noises that are destructive
and frequently found in semiconductor devices and ICs, yet detecting
and removing the noise has proved challenging for IC designers or users. According to the properties of burst noise, a methodological
approach is presented (proposed) in the paper, by which the burst noise
can be analysed and detected in time domain. In this paper, principles
and properties of burst noise are expounded first, Afterwards,
feasibility (viable) of burst noise detection by means of wavelet
transform in the time domain is corroborated in the paper, and the multi-resolution characters of Gaussian noise, burst noise and blurred
burst noise are discussed in details by computer emulation. Furthermore, the practical method to decide parameters of wavelet
transform is acquired through a great deal of experiment and data statistics. The methodology may yield an expectation in a wide variety of applications.
Abstract: A novel nanofinishing process using improved ball
end magnetorheological (MR) finishing tool was developed for finishing of flat as well as 3D surfaces of ferromagnetic and non ferromagnetic workpieces. In this process a magnetically controlled
ball end of smart MR polishing fluid is generated at the tip surface of
the tool which is used as a finishing medium and it is guided to
follow the surface to be finished through computer controlled 3-axes
motion controller. The experiments were performed on ferromagnetic
workpiece surface in the developed MR finishing setup to study the effect of finishing time on final surface roughness. The performance
of present finishing process on final finished surface roughness was studied. The surface morphology was observed under scanning
electron microscopy and atomic force microscope. The final surface finish was obtained as low as 19.7 nm from the initial surface
roughness of 142.9 nm. The outcome of newly developed finishing process can be found useful in its applications in aerospace,
automotive, dies and molds manufacturing industries, semiconductor and optics machining etc.
Abstract: A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.
Abstract: Fluorescent and WOLED are widely used because it consumes less energy. However, both lamps cause a harmonics because it has semiconductors components. Harmonic is a distorted sinusoidal electric wave and cause excess heat. This study compares the amount of harmonics generated by both lamps. The test shows that both lamps have THDv(Total Harmonics Distortion of Voltage) almost the same with average 2.5% while the average of WOLED's THDi(Total Harmonics Distortion of Current) is lower than fluorescent has. The average WOLED's THDi is 29.10 % and fluorescent's 'THDi is 87. 23 %.
Abstract: The systematic manipulations of shapes and sizes of
inorganic compounds greatly benefit the various application fields
including optics, magnetic, electronics, catalysis and medicine.
However shape control has been much more difficult to achieve.
Hence exploration of novel method for the preparation of differently
shaped nanoparticles is challenging research area. II-VI group of
semiconductor cadmium sulphide (CdS) nanostructure with different
morphologies (such as, acicular like, mesoporous, spherical shapes)
and of crystallite sizes vary from 11 to 16 nm were successfully
synthesized by chemical aqueous precipitation of Cd2+ ions with
homogeneously released S2- ions from decomposition of cadmium
sulphate (CdSO4) and thioacetamide (CH3CSNH2) by annealing at
different radiations (microwave, ultrasonic and sunlight) with matter
and systematic research has been done for various factors affecting
the controlled growth rate of CdS nanoparticles. The obtained
nanomaterials have been characterized by X-ray Diffraction (XRD),
Fourier Transform Infrared Spectroscopy (FTIR),
Thermogravometric (DSC-TGA) analysis and Scanning Electron
Microscopy (SEM). The result indicates that on increasing the
reaction time particle size increases but on increasing the molar ratios
grain size decreases.
Abstract: Un-doped GaN film of thickness 1.90 mm, grown on
sapphire substrate were uniformly implanted with 325 keV Mn+ ions
for various fluences varying from 1.75 x 1015 - 2.0 x 1016 ions cm-2 at
3500 C substrate temperature. The structural, morphological and
magnetic properties of Mn ion implanted gallium nitride samples
were studied using XRD, AFM and SQUID techniques. XRD of the
sample implanted with various ion fluences showed the presence of
different magnetic phases of Ga3Mn, Ga0.6Mn0.4 and Mn4N.
However, the compositions of these phases were found to be
depended on the ion fluence. AFM images of non-implanted sample
showed micrograph with rms surface roughness 2.17 nm. Whereas
samples implanted with the various fluences showed the presence of
nano clusters on the surface of GaN. The shape, size and density of
the clusters were found to vary with respect to ion fluence. Magnetic
moment versus applied field curves of the samples implanted with
various fluences exhibit the hysteresis loops. The Curie temperature
estimated from zero field cooled and field cooled curves for the
samples implanted with the fluence of 1.75 x 1015, 1.5 x 1016 and 2.0
x 1016 ions cm-2 was found to be 309 K, 342 K and 350 K
respectively.
Abstract: n-CdO/p-Si heterojunction diode was fabricated using
sol-gel spin coating technique which is a low cost and easily scalable
method for preparing of semiconductor films. The structural and
morphological properties of CdO film were investigated. The X-ray
diffraction (XRD) spectra indicated that the film was of
polycrystalline nature. The scanning electron microscopy (SEM)
images indicate that the surface morphology CdO film consists of the
clusters formed with the coming together of the nanoparticles. The
electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode
was investigated by current-voltage. The ideality factor of the diode
was found to be 3.02 for room temperature. The reverse current of
the diode strongly increased with illumination intensity of 100
mWcm-2 and the diode gave a maximum open circuit voltage Voc of
0.04 V and short-circuits current Isc of 9.92×10-9 A.
Abstract: The photoluminescence (PL) at 1.55 μm from
semiconducting β-FeSi2 has attracted a noticeable interest for
silicon-based optoelectronic applications. Moreover, its high optical
absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this
semiconducting material to be used as photovoltanics devices.
A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating
on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative
center was formed on a Cu- or Au- reated Si layer. This method of
deposition can be applied to other materials requiring high crystal
quality.
Abstract: Continuous-time delta-sigma analog digital converter (ADC) for radio frequency identification (RFID) complementary metal oxide semiconductor (CMOS) biosensor has been reported. This delta-sigma ADC is suitable for digital conversion of biosensor signal because of small process variation, and variable input range. As the input range of continuous-time switched current delta-sigma ADC (Dynamic range : 50 dB) can be limited by using current reference, amplification of biosensor signal is unnecessary. The input range is switched to wide input range mode or narrow input range mode by command of current reference. When the narrow input range mode, the input range becomes ± 0.8 V. The measured power consumption is 5 mW and chip area is 0.31 mm^2 using 1.2 um standard CMOS process. Additionally, automatic input range detecting system is proposed because of RFID biosensor applications.