Abstract: A method is developed for the solid-phase synthesis of epitaxial layers when the substrate itself is involved into a topochemical reaction and the reaction product grows in the interior of substrate layer. It opens up new possibilities for the relaxation of the elastic energy due to the attraction of point defects formed during the topochemical reaction in anisotropic media. The presented method of silicon carbide (SiC) formation employs a topochemical reaction between the single-crystalline silicon (Si) substrate and gaseous carbon monoxide (CO). The corresponding theory of interaction of point dilatation centers in anisotropic crystals is developed. It is eliminated that the most advantageous location of the point defects is the direction (111) in crystals with cubic symmetry. The single-crystal SiC films with the thickness up to 200 nm have been grown on Si (111) substrates owing to the topochemical reaction with CO. Grown high-quality single-crystal SiC films do not contain misfit dislocations despite the huge lattice mismatch value of ~20%. Also the possibility of growing of thick wide-gap semiconductor films on these templates SiC/Si(111) and, accordingly, its integration into Si electronics, is demonstrated. Finally, the ab initio theory of SiC formation due to the topochemical reaction has been developed.
Abstract: GaInAsSb cells probably show better performance than GaSb cells in low-temperature thermophotovoltaic systems due to lower bandgap; however, few experiments proved this phenomenon so far. In this paper, numerical simulation is used to evaluate GaInAsSb and GaSb cells with similar structures under different radiation temperatures. We found that GaInAsSb cells with n-type emitters show slightly higher output power densities compared with that of GaSb cells with n-type emitters below 1,550 K-blackbody radiation, and the power density of the later cells will suppress the formers above this temperature point. During the temperature range of 1,000~2,000 K, the efficiencies of GaSb cells are about twice of GaInAsSb cells if perfect filters are used to prevent the emission of the non-absorbed long wavelength photons. Several parameters that affect the GaInAsSb cell were analyzed, such as doping profiles, thicknesses of GaInAsSb epitaxial layer and surface recombination velocity. The non-p junctions, i.e., n-type emitters are better for GaInAsSb cell fabrication, which is similar to that of GaSb cells.
Abstract: The temperature dependence of wettability (wetting
angle, Θ (T)) for Ag-based melts on graphite and Al2O3 substrates is
compared. Typical alloying effects are found, as the Ag host metal is
gradually replaced by various metallic elements. The essence of
alloying lies in the change of the electron/atom (e/a) ratio. This ratio
is also manifested in the shift of wetting angles on the same substrate.
Nevertheless, the effects are partially smeared by other
(metallurgical) factors, like the interaction between the oxygenalloying
elements and by the graphite substrate-oxygen interaction. In
contrast, such effects are not pronounced in the case of Al2O3
substrates. As a consequence, Θ(T) exhibits an opposite trend in the
case of two substrates. Crossovers of the Θ(T) curves were often
found. The positions of crossovers depend on the chemical character
and concentration of solute atoms. Segregation and epitaxial texture
formation after solidification were also observed in certain alloy
drops, especially in high concentration range. This phenomenon is
not yet explained in every detail.
Abstract: A Silver (Ag) thin film is introduced as a template and
doping source for vertically aligned p–type ZnO nanorods. ZnO
nanorods were grown using an ammonium hydroxide based
hydrothermal process. During the hydrothermal process, the Ag thin
film was dissolved to generate Ag ions in the solution. The Ag ions can
contribute to doping in the wurzite structure of ZnO and the (111)
grain of Ag thin film can be the epitaxial temporal template for the
(0001) plane of ZnO. Hence, Ag–doped p–type ZnO nanorods were
successfully grown on the substrate, which can be an electrode or
semiconductor for the device application. To demonstrate the
potentials of this idea, p–n diode was fabricated and its electrical
characteristics were demonstrated.
Abstract: InGaAsN and GaAsN epitaxial layers with similar
nitrogen compositions in a sample were successfully grown on a
GaAs (001) substrate by solid source molecular beam epitaxy. An
electron cyclotron resonance nitrogen plasma source has been used to
generate atomic nitrogen during the growth of the nitride layers. The
indium composition changed from sample to sample to give
compressive and tensile strained InGaAsN layers. Layer
characteristics have been assessed by high-resolution x-ray
diffraction to determine the relationship between the lattice constant
of the GaAs1-yNy layer and the fraction x of In. The objective was to
determine the In fraction x in an InxGa1-xAs1-yNy epitaxial layer which
exactly cancels the strain present in a GaAs1-yNy epitaxial layer with
the same nitrogen content when grown on a GaAs substrate.
Abstract: The nanotechnology based on epitaxial systems
includes single or arranged misfit dislocations. In general, whatever
is the type of dislocation or the geometry of the array formed by the
dislocations; it is important for experimental studies to know exactly
the stress distribution for which there is no analytical expression [1,
2]. This work, using a numerical analysis, deals with relaxation of
epitaxial layers having at their interface a periodic network of edge
misfit dislocations. The stress distribution is estimated by using
isotropic elasticity. The results show that the thickness of the two
sheets is a crucial parameter in the stress distributions and then in the
profile of the two sheets.
A comparative study between the case of single dislocation and
the case of parallel network shows that the layers relaxed better when
the interface is covered by a parallel arrangement of misfit.
Consequently, a single dislocation at the interface produces an
important stress field which can be reduced by inserting a parallel
network of dislocations with suitable periodicity.
Abstract: We report here, the results of molecular dynamics
simulation of p-doped (Ga-face)GaN over n-doped (Siface)(
0001)4H-SiC hetero-epitaxial material system with one-layer
each of Ga-flux and (Al-face)AlN, as the interface materials, in the
form of, the total Density of States (DOS). It is found that the total
DOS at the Fermi-level for the heavily p-doped (Ga-face)GaN and ndoped
(Si-face)4H-SiC hetero-epitaxial system, with one layer of
(Al-face)AlN as the interface material, is comparatively higher than
that of the various cases studied, indicating that there could be good
vertical conduction across the (Ga-face)GaN over (Si-face)(0001)4HSiC
hetero-epitaxial material system.
Abstract: The present work is motivated by the idea that the
layer deformation in anisotropic elasticity can be estimated from the
theory of interfacial dislocations. In effect, this work which is an
extension of a previous approach given by one of the authors
determines the anisotropic displacement fields and the critical
thickness due to a complex biperiodic network of MDs lying just
below the free surface in view of the arrangement of dislocations.
The elastic fields of such arrangements observed along interfaces
play a crucial part in the improvement of the physical properties of
epitaxial systems. New results are proposed in anisotropic elasticity
for hexagonal networks of MDs which contain intrinsic and extrinsic
stacking faults. We developed, using a previous approach based on
the relative interfacial displacement and a Fourier series formulation
of the displacement fields, the expressions of elastic fields when
there is a possible dissociation of MDs. The numerical investigations
in the case of the observed system Si/(111)Si with low twist angles
show clearly the effect of the anisotropy and thickness when the
misfit networks are dissociated.
Abstract: The photoluminescence (PL) at 1.55 μm from
semiconducting β-FeSi2 has attracted a noticeable interest for
silicon-based optoelectronic applications. Moreover, its high optical
absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this
semiconducting material to be used as photovoltanics devices.
A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating
on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative
center was formed on a Cu- or Au- reated Si layer. This method of
deposition can be applied to other materials requiring high crystal
quality.