Abstract: GaInAsSb cells probably show better performance than GaSb cells in low-temperature thermophotovoltaic systems due to lower bandgap; however, few experiments proved this phenomenon so far. In this paper, numerical simulation is used to evaluate GaInAsSb and GaSb cells with similar structures under different radiation temperatures. We found that GaInAsSb cells with n-type emitters show slightly higher output power densities compared with that of GaSb cells with n-type emitters below 1,550 K-blackbody radiation, and the power density of the later cells will suppress the formers above this temperature point. During the temperature range of 1,000~2,000 K, the efficiencies of GaSb cells are about twice of GaInAsSb cells if perfect filters are used to prevent the emission of the non-absorbed long wavelength photons. Several parameters that affect the GaInAsSb cell were analyzed, such as doping profiles, thicknesses of GaInAsSb epitaxial layer and surface recombination velocity. The non-p junctions, i.e., n-type emitters are better for GaInAsSb cell fabrication, which is similar to that of GaSb cells.
Abstract: In this paper, a one - dimensional microstructure tungsten grating (pyramids) is optimized for potential application as thermophotovoltaic (TPV) emitter. The influence of gratings geometric parameters on the spectral emittance are studied by using the rigorous coupled-wave analysis (RCWA).The results show that the spectral emittance is affected by the gratings geometrical parameters. The optimum parameters are grating period of 0.5µm, a filling ratio of 0.8 and grating height of h=0.2µm. A broad peak of high emittance is obtained at wavelengths between 0.5 and 1.8µm. The emittance drops below 0.2 at wavelengths above 1.8µm. This can be explained by the surface plasmon polaritons excitation coupled with the grating microstructures. At longer wavelengths, the emittance remains low and this is highly desired for thermophotovoltaic applications to reduce the thermal leakage due to low-energy photons that do not produce any photocurrent. The proposed structure can be used as a selective emitter for a narrow band gap cell such as GaSb. The performance of this simple 1-D emitter proved to be superior to that from more complicated structures. Almost all the radiation from the emitter incident, at angles up to 40°, on the cell, could be utilized to produce a photocurrent. There is no need for a filter.