Photoluminescence Properties of β-FeSi2 on Cu- or Au-coated Si
The photoluminescence (PL) at 1.55 μm from
semiconducting β-FeSi2 has attracted a noticeable interest for
silicon-based optoelectronic applications. Moreover, its high optical
absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this
semiconducting material to be used as photovoltanics devices.
A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating
on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative
center was formed on a Cu- or Au- reated Si layer. This method of
deposition can be applied to other materials requiring high crystal
quality.
[1] V. Borisenko (Ed.), Semiconducting Silicides. Springer-Verlag, Berlin,
2000.
[2] N.Cherief, C.D-Anterroches, R.Cinti, T.Tan, and J.Derrien,
"Semiconducting silicideÔÇÉsilicon heterojunction elaboration by solid
phase epitaxy," Appl. Phys. Lett., Vol. 55, pp. 1671-1673, 1989.
[3] T. Suemasu, K. Takakura, C. Li, Y. Ozawa, Y. Kumagai, and F.
Hasegawa, "Epitaxial growth of semiconducting β-FeSi2 and its
application to light-emitting diodes," Thin Solid Films, vol. 461, pp.
209-218, 2004.
[4] T. Suemasu, Y. Iikura, T. Fujii, K. Takakura, N. Hiroi, and F. Hasegawa,
"Growth of Epitaxial β-FeSi2 Thin Film on Si(001) by Metal Organic
Chemical Vapor Deposition ," Jpn. J. Appl. Phys., vol. 38, pp. L620-622,
1999.
[5] K. Akiyama, T. Kimura, T. Suemasu, F. Hasegawa, Y. Maeda, and H.
Funakubo, " Growth of Epitaxial β-FeSi2 Thin Film on Si(001) by Metal
Organic Chemical Vapor Deposition," Jpn. J. Appl. Phys., vol. 43 pp.
L551-553, 2004.
[6] T.D. Hunt, K.J. Reeson, R.M. Gwilliam, K.P. Homewood, R.J. Wilson,
and B.J. Sealy, "Investigation of the luminescence properties of
Si/ β-FeSi2/Si heterojunction structures fabricated by ion beam
synthesis," J. Lumin. Vol. 57 pp. 25-27, 1993.
[7] L. Martinelli, E. Grilli, D.B. Migas, L. Miglio, F. Marabelli, C. Soci, M.
Geddo, M.G. Grimaldi, and C. Spinella, "Luminescence from β-FeSi2
precipitates in Si. II: Origin and nature of the photoluminescence," Phys.
Rev., B vol. 66 pp. 085320, 2002.
[8] J. I. Pankove, Optical Process in Semiconductor. Prentice-Hall,
Englewood Cliffs, NJ, 1971.
[1] V. Borisenko (Ed.), Semiconducting Silicides. Springer-Verlag, Berlin,
2000.
[2] N.Cherief, C.D-Anterroches, R.Cinti, T.Tan, and J.Derrien,
"Semiconducting silicideÔÇÉsilicon heterojunction elaboration by solid
phase epitaxy," Appl. Phys. Lett., Vol. 55, pp. 1671-1673, 1989.
[3] T. Suemasu, K. Takakura, C. Li, Y. Ozawa, Y. Kumagai, and F.
Hasegawa, "Epitaxial growth of semiconducting β-FeSi2 and its
application to light-emitting diodes," Thin Solid Films, vol. 461, pp.
209-218, 2004.
[4] T. Suemasu, Y. Iikura, T. Fujii, K. Takakura, N. Hiroi, and F. Hasegawa,
"Growth of Epitaxial β-FeSi2 Thin Film on Si(001) by Metal Organic
Chemical Vapor Deposition ," Jpn. J. Appl. Phys., vol. 38, pp. L620-622,
1999.
[5] K. Akiyama, T. Kimura, T. Suemasu, F. Hasegawa, Y. Maeda, and H.
Funakubo, " Growth of Epitaxial β-FeSi2 Thin Film on Si(001) by Metal
Organic Chemical Vapor Deposition," Jpn. J. Appl. Phys., vol. 43 pp.
L551-553, 2004.
[6] T.D. Hunt, K.J. Reeson, R.M. Gwilliam, K.P. Homewood, R.J. Wilson,
and B.J. Sealy, "Investigation of the luminescence properties of
Si/ β-FeSi2/Si heterojunction structures fabricated by ion beam
synthesis," J. Lumin. Vol. 57 pp. 25-27, 1993.
[7] L. Martinelli, E. Grilli, D.B. Migas, L. Miglio, F. Marabelli, C. Soci, M.
Geddo, M.G. Grimaldi, and C. Spinella, "Luminescence from β-FeSi2
precipitates in Si. II: Origin and nature of the photoluminescence," Phys.
Rev., B vol. 66 pp. 085320, 2002.
[8] J. I. Pankove, Optical Process in Semiconductor. Prentice-Hall,
Englewood Cliffs, NJ, 1971.
@article{"International Journal of Chemical, Materials and Biomolecular Sciences:51947", author = "Kensuke Akiyama and Satoru Kaneko and Takeshi Ozawa and Kazuya Yokomizo and Masaru Itakura", title = "Photoluminescence Properties of β-FeSi2 on Cu- or Au-coated Si", abstract = "The photoluminescence (PL) at 1.55 μm from
semiconducting β-FeSi2 has attracted a noticeable interest for
silicon-based optoelectronic applications. Moreover, its high optical
absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this
semiconducting material to be used as photovoltanics devices.
A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating
on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative
center was formed on a Cu- or Au- reated Si layer. This method of
deposition can be applied to other materials requiring high crystal
quality.", keywords = "iron silicide, semiconductor, epitaxial,photoluminescence.", volume = "5", number = "2", pages = "128-3", }