Abstract: A simple approach is demonstrated for growing large
scale, nearly vertically aligned ZnO nanowire arrays by thermal
oxidation method. To reveal effect of temperature on growth and
physical properties of the ZnO nanowires, gold coated zinc substrates
were annealed at 300 °C and 400 °C for 4 hours duration in air. Xray
diffraction patterns of annealed samples indicated a set of well
defined diffraction peaks, indexed to the wurtzite hexagonal phase of
ZnO. The scanning electron microscopy studies show formation of
ZnO nanowires having length of several microns and average of
diameter less than 500 nm. It is found that the areal density of wires
is relatively higher, when the annealing is carried out at higher
temperature i.e. at 400°C. From the field emission studies, the values
of the turn-on and threshold field, required to draw emission current
density of 10 μA/cm2 and 100 μA/cm2 are observed to be 1.2 V/μm
and 1.7 V/μm for the samples annealed at 300 °C and 2.9 V/μm and
3.7 V/μm for that annealed at 400 °C, respectively. The field
emission current stability, investigated over duration of more than 2
hours at the preset value of 1 μA, is found to be fairly good in both
cases. The simplicity of the synthesis route coupled with the
promising field emission properties offer unprecedented advantage
for the use of ZnO field emitters for high current density
applications.
Abstract: Nanowire arrays of copper with uniform diameters have
been synthesized by potentiostatic electrochemical metal deposition
(EMD) of copper sulphate and potassium chloride solution within
the nano-channels of porous Indium-Tin Oxide (ITO), also known as
Tin doped Indium Oxide templates. The nanowires developed were
fairly continuous with diameters ranging from 110-140 nm along
the entire length. Single as well as poly-crystalline copper wires
have been prepared by application of appropriate potential during the
EMD process. Scanning electron microscopy (SEM), high resolution
transmission electron microscopy (HRTEM), small angle electron
diffraction (SAED) and atomic force microscopy (AFM) were used
to characterize the synthesized nano wires at room temperature. The
electrochemical response of synthesized products was evaluated by
cyclic voltammetry while surface energy analysis was carried out
using a Goniometer.
Abstract: Vertical ZnO nanowire array films were synthesized
based on aqueous method for sensing applications. ZnO nanowires
were investigated structurally using X-ray diffraction (XRD) and
scanning electron microscopy (SEM). The gas-sensing properties of
ZnO nanowires array films are studied. It is found that the ZnO
nanowires array film sensor exhibits excellent sensing properties
towards O2 and CO2 at 100 °C with the response time shorter than 5
s. High surface area / volume ratio of vertical ZnO nanowire and high
mobility accounts for the fast response and recovery. The sensor
response was measured in the range from 100 to 500 ppm O2 and CO2
in this study.
Abstract: Post growth annealing of solution grown ZnO
nanowire array is performed under controlled oxygen ambience. The
role of annealing over surface defects and their consequence on
dark/photo-conductivity and photosensitivity of nanowire array is
investigated. Surface defect properties are explored using various
measurement tools such as contact angle, photoluminescence, Raman
spectroscopy and XPS measurements. The contact angle of the NW
films reduces due to oxygen annealing and nanowire film surface
changes from hydrophobic (96°) to hydrophilic (16°). Raman and
XPS spectroscopy reveal that oxygen annealing improves the crystal
quality of the nanowire films. The defect band emission intensity
(relative to band edge emission, ID/IUV) reduces from 1.3 to 0.2 after
annealing at 600 °C at 10 SCCM flow of oxygen. An order
enhancement in dark conductivity is observed in O2 annealed
samples, while photoconductivity is found to be slightly reduced due
to lower concentration of surface related oxygen defects.