Abstract: Graphene material has found tremendous applications
in water desalination, DNA sequencing and energy storage. Multiple
nanopores are etched to create opening for water desalination and
energy storage applications. The nanopores created are of the order
of 3-5 nm allowing multiple ions to transport through the pore. In
this paper, we present for the first time, molecular dynamics study of
single ion transport, where only one ion passes through the graphene
nanopore. The diameter of the graphene nanopore is of the same
order as the hydration layers formed around each ion. Analogous to
single electron transport resulting from ionic transport is observed
for the first time. The current-voltage characteristics of such a device
are similar to single electron transport in quantum dots. The current
is blocked until a critical voltage, as the ions are trapped inside a
hydration shell. The trapped ions have a high energy barrier compared
to the applied input electrical voltage, preventing the ion to break free
from the hydration shell. This region is called “Coulomb blockade
region”. In this region, we observe zero transport of ions inside the
nanopore. However, when the electrical voltage is beyond the critical
voltage, the ion has sufficient energy to break free from the energy
barrier created by the hydration shell to enter into the pore. Thus, the
input voltage can control the transport of the ion inside the nanopore.
The device therefore acts as a binary storage unit, storing 0 when
no ion passes through the pore and storing 1 when a single ion
passes through the pore. We therefore postulate that the device can
be used for fluidic computing applications in chemistry and biology,
mimicking a computer. Furthermore, the trapped ion stores a finite
charge in the Coulomb blockade region; hence the device also acts
a super capacitor.
Abstract: This paper aims to analysis the behavior of DC corona
discharge in wire-to-plate electrostatic precipitators (ESP). Currentvoltage
curves are particularly analyzed. Experimental results show
that discharge current is strongly affected by the applied voltage. The proposed method of current identification is to use the method
of least squares. Least squares problems that of into two categories:
linear or ordinary least squares and non-linear least squares,
depending on whether or not the residuals are linear in all unknowns.
The linear least-squares problem occurs in statistical regression
analysis; it has a closed-form solution. A closed-form solution (or
closed form expression) is any formula that can be evaluated in a
finite number of standard operations. The non-linear problem has no
closed-form solution and is usually solved by iterative.
Abstract: The current-voltage characteristics of a PtSi/p-Si
Schottky barrier diode was measured at the temperature of 85 K and
from the forward bias region of the I-V curve, the electrical
parameters of the diode were measured by three methods. The results
obtained from the two methods which considered the series resistance
were in close agreement with each other and from them barrier height
(), ideality factor (n) and series resistance () were found to be
0.2045 eV, 2.877 and 14.556 K respectively. By measuring the I-V
characteristics in the temperature range of 85-136 K the electrical
parameters were observed to have strong dependency on temperature.
The increase of barrier height and decrease of ideality factor with
increasing temperature is attributed to the existence of barrier height
inhomogeneities in the silicide-semiconductor structure.
Abstract: In this paper, fabrication and study of electronic properties of Au/methyl-red/Ag surface type Schottky diode by current-voltage (I-V) method has been reported. The I-V characteristics of the Schottky diode showed the good rectifying behavior. The values of ideality factor n and barrier height b of Au/methyl-red/Ag Schottky diode were calculated from the semi-log I-V characteristics and by using the Cheung functions. From semi-log current-voltage characteristics the values of n and b were found 1.93 and 0.254 eV, respectively, while by using Cheung functions their values were calculated 1.89 and 0.26 eV, respectively. The effect of series resistance was also analyzed by Cheung functions. The series resistance RS values were determined from dV/d(lnI)–I and H(I)–I graphs and were found to be 1.1 k and 1.3 k, respectively.
Abstract: In this work, an organic compound 5,10,15,20-
Tetrakis(3,5-di-tertbutylphenyl)porphyrinatocopper(II) (TDTBPPCu)
is studied as an active material for thin film electronic devices. To
investigate the electrical properties of TDTBPPCu, junction of
TDTBPPCu with heavily doped n-Si and Al is fabricated.
TDTBPPCu film was sandwiched between Al and n-Si electrodes.
Various electrical parameters of TDTBPPCu are determined. The
current-voltage characteristics of the junction are nonlinear,
asymmetric and show rectification behavior, which gives the clue of
formation of depletion region. This behavior indicates the potential
of TDTBPPCu for electronics applications. The current-voltage and
capacitance-voltage techniques are used to find the different
electronic parameters.
Abstract: n-CdO/p-Si heterojunction diode was fabricated using
sol-gel spin coating technique which is a low cost and easily scalable
method for preparing of semiconductor films. The structural and
morphological properties of CdO film were investigated. The X-ray
diffraction (XRD) spectra indicated that the film was of
polycrystalline nature. The scanning electron microscopy (SEM)
images indicate that the surface morphology CdO film consists of the
clusters formed with the coming together of the nanoparticles. The
electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode
was investigated by current-voltage. The ideality factor of the diode
was found to be 3.02 for room temperature. The reverse current of
the diode strongly increased with illumination intensity of 100
mWcm-2 and the diode gave a maximum open circuit voltage Voc of
0.04 V and short-circuits current Isc of 9.92×10-9 A.