Abstract: The effect of chemical treatment in CdCl2 on the
compositional changes and defect structures of potentially useful ZnS
solar cell thin films prepared by vacuum deposition method was
studied using the complementary Rutherford backscattering (RBS)
and Thermoluminesence (TL) techniques. A series of electron and
hole traps are found in the various as deposited samples studied.
After treatment, perturbation on the intensity is noted; mobile defect
states and charge conversion and/or transfer between defect states are
found.
Abstract: Microbial contamination, most of which are fecal born in drinking water and food industry is a serious threat to humans. Escherichia coli is one of the most common and prevalent among them. We have developed a sensor for rapid and an early detection of contaminants, taking E.coli as a threat indicator organism. The sensor is based on co-polymerizations of aniline and formaldehyde in form of thin film over glass surface using the vacuum deposition technique. The particular doping combination of thin film with Fe-Al and Fe-Cu in different concentrations changes its non conducting properties to p- type semi conductor. This property is exploited to detect the different contaminants, believed to have the different surface charge. It was found through experiments that different microbes at same OD (0.600 at 600 nm) have different conductivity in solution. Also the doping concentration is found to be specific for attracting microbes on the basis of surface charge. This is a simple, cost effective and quick detection method which not only decreases the measurement time but also gives early warnings for highly contaminated samples.
Abstract: We propose photo-BJMOSFET (Bipolar Junction Metal-Oxide-Semiconductor Field Effect Transistor) fabricated on SOI film. ITO film is adopted in the device as gate electrode to reduce light absorption. I-V characteristics of photo-BJMOSFET obtained in dark (dark current) and under 570nm illumination (photo current) are studied furthermore to achieve high photo-to-dark-current contrast ratio. Two variables in the calculation were the channel length and the thickness of the film which were set equal to six different values, i.e., L=2, 4, 6, 8, 10, and 12μm and three different values, i.e., dsi =100, 200 and 300nm, respectively. The results indicate that the greatest photo-to-dark-current contrast ratio is achieved with L=10μm and dsi=200 nm at VGK=0.6V.
Abstract: We fabricated the inverted-staggered etch stopper
structure oxide-based TFT and investigated the characteristics of oxide
TFT under the 400 nm wavelength light illumination. When 400 nm
light was illuminated, the threshold voltage (Vth) decreased and
subthreshold slope (SS) increased at forward sweep, while Vth and SS
were not altered when larger wavelength lights, such as 650 nm, 550
nm and 450 nm, were illuminated. At reverse sweep, the transfer curve
barely changed even under 400 nm light. Our experimental results
support that photo-induced hole carriers are captured by donor-like
interface trap and it caused the decrease of Vth and increase of SS. We
investigated the interface trap density increases proportionally to the
photo-induced hole concentration at active layer.
Abstract: End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers,DZ-dihexylquarterthiophene (DH-4T) and DZ-dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtained a stable characteristic curve. The field effect mobility, Pwas calculated to be 3.2910-4 cm2/Vs for DH-6T based OTFT; while the DH-4T based OTFT had 1.8810-5 cm2/Vs.KeywordsOrganic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.
Abstract: Pyrite (FeS2) is a promising candidate for cathode
materials in batteries because of it`s high theoretical capacity, low
cost and non-toxicity. In this study, nano size iron disulfide thin film
was prepared on graphite substrate through a new method as battery
cathode. In this way, acetylene black and poly vinylidene fluoride
were used as electron conductor and binder, respectively. Fabricated
thin films were analyzed by XRD and SEM. These results and
electrochemical data confirm improvement of battery discharge
capacity in comparison with commercial type of pyrite.
Abstract: In this work we report on preliminary analysis of a novel optoelectronic gas sensor based on an optical fiber integrated with a tetrakis(4-sulfonatophenyl)porphyrin (TPPS) thin film. The sensitive materials are selectively deposited on the core region of a fiber tip by UV light induced deposition technique. A simple and cheap process which can be easily extended to different porphyrin derivatives. When the TPPS film on the fiber tip is exposed to acid and/or base vapors, dramatic changes occur in the aggregation structure of the dye molecules in the film, from J- to H-type, resulting in a profound modification of their corresponding reflectance spectra. From the achieved experimental results it is evident that the presence of intense and narrow band peaks in the reflected spectra could be monitored to detect hazardous vapors.
Abstract: A SnO2/CdS/CdTe heterojunction was fabricated by
thermal evaporation technique. The fabricated cells were annealed at
573K for periods of 60, 120 and 180 minutes. The structural
properties of the solar cells have been studied by using X-ray
diffraction. Capacitance- voltage measurements were studied for the
as-prepared and annealed cells at a frequency of 102 Hz. The
capacitance- voltage measurements indicated that these cells are
abrupt. The capacitance decreases with increasing annealing time.
The zero bias depletion region width and the carrier concentration
increased with increasing annealing time. The carrier transport
mechanism for the CdS/CdTe heterojunction in dark is tunneling
recombination. The ideality factor is 1.56 and the reverse bias
saturation current is 9.6×10-10A. The energy band lineup for the n-
CdS/p-CdTe heterojunction was investigated using current - voltage
and capacitance - voltage characteristics.
Abstract: We have fabricated a-IGZO TFT and investigated the
stability under positive DC and AC bias stress. The threshold voltage
of a-IGZO TFT shifts positively under those biases, and that reduces
on-current. For this reason, conventional shift-register circuit
employing TFTs which stressed by positive bias will be unstable, may
do not work properly. We have designed a new 6-transistor
shift-register, which has less transistors than prior circuits. The TFTs
of the proposed shift-register are not suffering from positive DC or AC
stress, mainly kept unbiased. Despite the compact design, the stable
output signal was verified through the SPICE simulation even under
RC delay of clock signal.
Abstract: Optical properties of sputter-deposited ZnS thin films
were investigated as potential replacements for CBD(chemical bath
deposition) CdS buffer layers in the application of CIGS solar cells.
ZnS thin films were fabricated on glass substrates at RT, 150oC, 200oC,
and 250oC with 50 sccm Ar gas using an RF magnetron sputtering
system. The crystal structure of the thin film is found to be zinc blende
(cubic) structure. Lattice parameter of ZnS is slightly larger than CdS
on the plane and thus better matched with that of CIGS. Within a
400-800 nm wavelength region, the average transmittance was larger
than 75%. When the deposition temperature of the thin film was
increased, the blue shift phenomenon was enhanced. Band gap energy
of the ZnS thin film tended to increase as the deposition temperature
increased. ZnS thin film is a promising material system for the CIGS
buffer layer, in terms of ease of processing, low cost, environmental
friendliness, higher transparency, and electrical properties
Abstract: The substrate heater designed for this investigation is a front side substrate heating system. It consists of 10 conventional tungsten halogen lamps and an aluminum reflector, total input electrical power of 5 kW. The substrate is heated by means of a radiation from conventional tungsten halogen lamps directed to the substrate through a glass window. This design allows easy replacement of the lamps and maintenance of the system. Within 2 to 6 minutes the substrate temperature reaches 500 to 830 C by varying the vertical distance between the glass window and the substrate holder. Moreover, the substrate temperature can be easily controlled by controlling the input power to the system. This design gives excellent opportunity to deposit many deferent films at deferent temperatures in the same deposition time. This substrate heater was successfully used for Chemical Vapor Deposition (CVD) of many thin films, such as Silicon, iron, etc.
Abstract: The present work is motivated by the idea that the
layer deformation in anisotropic elasticity can be estimated from the
theory of interfacial dislocations. In effect, this work which is an
extension of a previous approach given by one of the authors
determines the anisotropic displacement fields and the critical
thickness due to a complex biperiodic network of MDs lying just
below the free surface in view of the arrangement of dislocations.
The elastic fields of such arrangements observed along interfaces
play a crucial part in the improvement of the physical properties of
epitaxial systems. New results are proposed in anisotropic elasticity
for hexagonal networks of MDs which contain intrinsic and extrinsic
stacking faults. We developed, using a previous approach based on
the relative interfacial displacement and a Fourier series formulation
of the displacement fields, the expressions of elastic fields when
there is a possible dissociation of MDs. The numerical investigations
in the case of the observed system Si/(111)Si with low twist angles
show clearly the effect of the anisotropy and thickness when the
misfit networks are dissociated.
Abstract: Effect of temperature and light was investigated on a
thin film of organic semiconductor formyl-TIPPCu(II) deposited on a
glass substrate with preliminary evaporated gold electrodes. The
electrical capacitance and resistance of the fabricated device were
evaluated under the effect of temperature and light. The relative
capacitance of the fabricated sensor increased by 4.3 times by rising
temperature from 27 to 1870C, while under illumination up to 25000
lx, the capacitance of the Au/formyl-TIPPCu(II)/Au photo capacitive
sensor increased continuously by 13.2 times as compared to dark
conditions.
Abstract: Technology of thin film deposition is of interest in
many engineering fields, from electronic manufacturing to corrosion
protective coating. A typical deposition process, like that developed
at the University of Eindhoven, considers the deposition of a thin,
amorphous film of C:H or of Si:H on the substrate, using the
Expanding Thermal arc Plasma technique. In this paper a computing
procedure is proposed to simulate the flow field in a deposition
chamber similar to that at the University of Eindhoven and a
sensitivity analysis is carried out in terms of: precursor mass flow
rate, electrical power, supplied to the torch and fluid-dynamic
characteristics of the plasma jet, using different nozzles. To this
purpose a deposition chamber similar in shape, dimensions and
operating parameters to the above mentioned chamber is considered.
Furthermore, a method is proposed for a very preliminary evaluation
of the film thickness distribution on the substrate. The computing
procedure relies on two codes working in tandem; the output from
the first code is the input to the second one. The first code simulates
the flow field in the torch, where Argon is ionized according to the
Saha-s equation, and in the nozzle. The second code simulates the
flow field in the chamber. Due to high rarefaction level, this is a
(commercial) Direct Simulation Monte Carlo code. Gas is a mixture
of 21 chemical species and 24 chemical reactions from Argon plasma
and Acetylene are implemented in both codes. The effects of the
above mentioned operating parameters are evaluated and discussed
by 2-D maps and profiles of some important thermo-fluid-dynamic
parameters, as per Mach number, velocity and temperature. Intensity,
position and extension of the shock wave are evaluated and the
influence of the above mentioned test conditions on the film
thickness and uniformity of distribution are also evaluated.
Abstract: Nanocrystalline thin film of Na0.1V2O5.nH2O xerogel
obtained by sol gel synthesis was used as gas sensor. Gas sensing
properties of different gases such as hydrogen, petroleum and
humidity were investigated. Applying XRD and TEM the size of the
nanocrystals is found to be 7.5 nm. SEM shows a highly porous
structure with submicron meter-sized voids present throughout the
sample. FTIR measurement shows different chemical groups
identifying the obtained series of gels. The sample was n-type
semiconductor according to the thermoelectric power and electrical
conductivity. It can be seen that the sensor response curves from
130oC to 150oC show a rapid increase in sensitivity for all types of
gas injection, low response values for heating period and the rapid
high response values for cooling period. This result may suggest that
this material is able to act as gas sensor during the heating and
cooling process.
Abstract: Today, the central role of industrial robots in automation in general and in material handling in particular is crystal clear. Based on the current status of Photovoltaics and by focusing on lightweight material handling, PV industry has turned into a potential candidate for introducing a fresh “pick and place" robot technology. Thus, to examine the industry needs in this regard, firstly the best suited applications for such robotic automation,and then the essential prerequisites in PV industry should be identified. The objective of this paper is to present holistic views on the industry trends, general automation status and existing challenges facing lightweight robotic material handling in PV Silicon Wafer and Thin Film technologies. The results of this study show that currently no uniform pick and place solution prevails among PV Silicon Wafer manufacturers and the industry calls for a new robot solution to satisfy its needs in new directions.
Abstract: We succeeded to produce a high performance and flexible graphene/Manganese dioxide (G/MnO2) electrode coated on flexible polyethylene terephthalate (PET) substrate. The graphene film is initially synthesized by drop-casting the graphene oxide (GO) solution on the PET substrate, followed by simultaneous reduction and patterning of the dried film using carbon dioxide (CO2) laser beam with power of 1.8 W. Potentiostatic Anodic Deposition method was used to deposit thin film of MnO2 with different loading mass 10 – 50 and 100 μg.cm-2 on the pre-prepared graphene film. The electrodes were fully characterized in terms of structure, morphology, and electrochemical performance. A maximum specific capacitance of 973 F.g-1 was attributed when depositing 50μg.cm-2 MnO2 on the laser reduced graphene oxide rGO (or G/50MnO2) and over 92% of its initial capacitance was retained after 1000 cycles. The good electrochemical performance and long-term cycling stability make our proposed approach a promising candidate in the supercapacitor applications.
Abstract: We derive simple sets of equations to describe the microwave response of a thin film of magnetized hydrogen plasma in the presence of carbon nanotubes, which were grown by ironcatalyzed high-pressure disproportionation (HiPco). By considering the interference effects due to multiple reflections between thin plasma film interfaces, we present the effects of the continuously changing external magnetic field and plasma parameters on the reflected power, absorbed power, and transmitted power in the system. The simulation results show that the interference effects play an important role in the reflectance, transmittance and absorptance of microwave radiation at the magnetized plasma slab. As a consequence, the interference effects lead to a sinusoidal variation of the reflected intensity and can greatly reduce the amount of reflection power, but the absorption power increases.
Abstract: The ferroelectric behavior of barium strontium
titanate (BST) in thin film form has been investigated in order to
study the possibility of using BST for ferroelectric gate-field effect
transistor (FeFET) for memory devices application. BST thin films
have been fabricated as Al/BST/Pt/SiO2/Si-gate configuration. The
variation of the dielectric constant (ε) and tan δ with frequency have
been studied to ensure the dielectric quality of the material. The
results show that at low frequencies, ε increases as the Ba content
increases, whereas at high frequencies, it shows the opposite
variation, which is attributed to the dipole dynamics. tan δ shows low
values with a peak at the mid-frequency range. The ferroelectric
behavior of the Al/BST/Pt/SiO2/Si has been investigated using C-V
characteristics. The results show that the strength of the ferroelectric
hysteresis loop increases as the Ba content increases; this is attributed
to the grain size and dipole dynamics effect.
Abstract: ZnO-SnO2 i.e. Zinc-Tin-Oxide (ZTO) thin films were
deposited on glass substrate with varying concentrations (ZnO:SnO2
- 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash
evaporation technique. These deposited ZTO film were annealed at
450 0C in vacuum. These films were characterized to study the effect
of annealing on the structural, electrical, and optical properties.
Atomic force microscopy (AFM) and Scanning electron microscopy
(SEM) images manifest the surface morphology of these ZTO thin
films. The apparent growth of surface features revealed the formation
of nanostructure ZTO thin films. The small value of surface
roughness (root mean square RRMS) ensures the usefulness in
optical coatings. The sheet resistance was also found to be decreased
for both types of films with increasing concentration of SnO2. The
optical transmittance found to be decreased however blue shift has
been observed after annealing.