Abstract: A SnO2/CdS/CdTe heterojunction was fabricated by
thermal evaporation technique. The fabricated cells were annealed at
573K for periods of 60, 120 and 180 minutes. The structural
properties of the solar cells have been studied by using X-ray
diffraction. Capacitance- voltage measurements were studied for the
as-prepared and annealed cells at a frequency of 102 Hz. The
capacitance- voltage measurements indicated that these cells are
abrupt. The capacitance decreases with increasing annealing time.
The zero bias depletion region width and the carrier concentration
increased with increasing annealing time. The carrier transport
mechanism for the CdS/CdTe heterojunction in dark is tunneling
recombination. The ideality factor is 1.56 and the reverse bias
saturation current is 9.6×10-10A. The energy band lineup for the n-
CdS/p-CdTe heterojunction was investigated using current - voltage
and capacitance - voltage characteristics.