RBS Characteristic of Cd1−xZnxS Thin Film Fabricated by Vacuum Deposition Method

Cd1−xZnxS thins films have been fabricated from ZnS/CdS/ZnS multilayer thin film systems, by using the vacuum deposition method; the Rutherford backscattering (RBS) technique have been applied in order to determine the: structure, composition, depth profile, and stoichiometric of these films. The influence of the chemical and heat treatments on the produced films also have been investigated; the RBS spectra of the films showed that homogenous Cd1−xZnxS can be synthesized with x=0.45.

Study the Influence of Chemical Treatment on the Compositional Changes and Defect Structures of ZnS Thin Film

The effect of chemical treatment in CdCl2 on the compositional changes and defect structures of potentially useful ZnS solar cell thin films prepared by vacuum deposition method was studied using the complementary Rutherford backscattering (RBS) and Thermoluminesence (TL) techniques. A series of electron and hole traps are found in the various as deposited samples studied. After treatment, perturbation on the intensity is noted; mobile defect states and charge conversion and/or transfer between defect states are found.

The Effect of Chemical Treatment on TL Glow Curves of CdS/ZnS Thin Films Deposited by Vacuum Deposition Method

The effect of chemical treatment in CdCl2 and thermal annealing in 400°C, on the defect structures of potentially useful ZnS\CdS solar cell thin films deposited onto quartz substrate and prepared by vacuum deposition method was studied using the Thermoluminesence (TL) techniques. A series of electron and hole traps are found in the various deposited samples studied. After annealing, however, it was observed that the intensity and activation energy of TL signal increases with loss of the low temperature electron traps.