Abstract: The effect of chemical treatment in CdCl2 on the
compositional changes and defect structures of potentially useful ZnS
solar cell thin films prepared by vacuum deposition method was
studied using the complementary Rutherford backscattering (RBS)
and Thermoluminesence (TL) techniques. A series of electron and
hole traps are found in the various as deposited samples studied.
After treatment, perturbation on the intensity is noted; mobile defect
states and charge conversion and/or transfer between defect states are
found.
Abstract: Optical properties of sputter-deposited ZnS thin films
were investigated as potential replacements for CBD(chemical bath
deposition) CdS buffer layers in the application of CIGS solar cells.
ZnS thin films were fabricated on glass substrates at RT, 150oC, 200oC,
and 250oC with 50 sccm Ar gas using an RF magnetron sputtering
system. The crystal structure of the thin film is found to be zinc blende
(cubic) structure. Lattice parameter of ZnS is slightly larger than CdS
on the plane and thus better matched with that of CIGS. Within a
400-800 nm wavelength region, the average transmittance was larger
than 75%. When the deposition temperature of the thin film was
increased, the blue shift phenomenon was enhanced. Band gap energy
of the ZnS thin film tended to increase as the deposition temperature
increased. ZnS thin film is a promising material system for the CIGS
buffer layer, in terms of ease of processing, low cost, environmental
friendliness, higher transparency, and electrical properties
Abstract: The effect of chemical treatment in CdCl2 and thermal
annealing in 400°C, on the defect structures of potentially useful
ZnS\CdS solar cell thin films deposited onto quartz substrate and
prepared by vacuum deposition method was studied using the
Thermoluminesence (TL) techniques. A series of electron and hole
traps are found in the various deposited samples studied. After
annealing, however, it was observed that the intensity and activation
energy of TL signal increases with loss of the low temperature
electron traps.