Three Dimensional MEMS Supercapacitor Fabricated by DRIE on Silicon Substrate

Micro power sources are required to be used in autonomous microelectromechanical system (MEMS). In this paper,  we designed and fabricated a three dimensional (3D) MEMS supercapacitor, which is consisting of conformal silicon  dioxide/titanium/polypyrrole (PPy) layers on silicon substrate. At first, ''through-structure'' was fabricated on the silicon substrate by high-aspect-ratio deep reactive ion etching (DRIE) method, which enlarges the available surface area significantly. Then the SiO2/Ti/PPy layers grew sequentially on the ³through-structure´. Finally, the supercapacitor was investigated by electrochemical methods.

Fluorescent-Core Microcavities Based On Silicon Quantum Dots for Oil Sensing Applications

The compatibility of optical resonators with microfluidic systems may be relevant for chemical and biological applications. Here, a fluorescent-core microcavity (FCM) is investigated as a refractometric sensor for heavy oils. A high-index film of silicon quantum dots (QDs) was formed inside the capillary, supporting cylindrical fluorescence whispering gallery modes (WGMs). A set of standard refractive index oils was injected into a capillary, causing a shift of the WGM resonances toward longer wavelengths. A maximum sensitivity of 240 nm/RIU (refractive index unit) was found for a nominal oil index of 1.74. As well, a sensitivity of 22 nm/RIU was obtained for a lower index of 1.48, more typical of fuel hydrocarbons. Furthermore, the observed spectra and sensitivities were compared to theoretical predictions and reproduced via FDTD simulations, showing in general an excellent agreement. This work demonstrates the potential use of FCMs for oil sensing applications and the more generally for detecting liquid solutions with a high refractive index or high viscosity.

Investigation of Multiple Material Gate Impact on Short Channel Effects and Reliability of Nanoscale SOI MOSFETs

In this paper the features of multiple material gate silicon-on-insulator MOSFETs are presented and compared with single material gate silicon-on-insulator MOSFET structures. The results indicate that the multiple material gate structures reduce short channel effects such as drain induce barrier lowering, hot electron effect and better current characteristics in comparison with single material structures

Chain Extender on Property Relationships of Polyurethane Derived from Soybean Oil

Polyurethane foams (PUF) has been prepared from vegetable; soybean based polyols. They were characterized into flexible and semi rigid polyurethane foam. This work is directed to production of flexible polyurethane foams by a process involving the reaction of mixture of 2,4- and 2,6-Toluene di Isocyanate isomers, with portion of to blends of soy polyols with petroleum polyol in the presence of other ingredients such as blowing agents, silicone surfactants and accelerating agents. Additon of chain extender improves the property then further decreases the properties on further addition of the same. The objective of this work was to study the effect of chain extender and role of phosphoric acid catalyst to the final properties and correlate the morphology image with mechanical properties of these foams.

Influence of PLA Film Packaging on the Shelf Life of Soft Cheese Kleo

Experiments were carried out at the Faculty of Food Technology of Latvia University of Agriculture (LLU). Soft cheese Kleo produced in Latvia was packed in a biodegradable PLA without barrierproperties and VC999 BioPack lidding film PLA, coated with a barrier of pure silicon oxide (SiOx) and in combination with modified atmosphere (MAP) the influence on the shelf life was investigated and compared with some conventional (OPP, PE/PA, PE/OPA and Multibarrier 60) polymer film impact. Modified atmosphere consisted of carbon dioxide CO2 (E 290) 30% and nitrogen N2 (E 941) 70%. The analyzable samples were stored at the temperature of +4.0±0.5 °C up to 32 days- and analyzed before packaging and in the 0, 5th, 11th, 15th, 18th, 22nd, 25th, 29th and 32nd day of storage. The shelf life was extended along to 32 days, good outside appearance and lactic acid aroma was observed.

Inductance Characteristic of Annealed Titanium Dioxide on Silicon Substrate

The control of oxygen flow rate during growth of titanium dioxide by mass flow controller in DC plasma sputtering growth system is studied. The impedance of TiO2 films for inductance effect is influenced by annealing time and oxygen flow rate. As annealing time is increased, the inductance of TiO2 film is the more. The growth condition of optimum and maximum inductance for TiO2 film to serve as sensing device are oxygen flow rate of 15 sccm and large annealing time. The large inductance of TiO2 film will be adopted to fabricate the biosensor to obtain the high sensitivity of sensing in biology.

High Temperature Hydrogen Sensors Based On Pd/Ta2O5/SiC MOS Capacitor

There are a many of needs for the development of SiC-based hydrogen sensor for harsh environment applications. We fabricated and investigated Pd/Ta2O5/SiC-based hydrogen sensors with MOS capacitor structure for high temperature process monitoring and leak detection applications in such automotive, chemical and petroleum industries as well as direct monitoring of combustion processes. In this work, we used silicon carbide (SiC) as a substrate to replace silicon which operating temperatures are limited to below 200°C. Tantalum oxide was investigated as dielectric layer which has high permeability for hydrogen gas and high dielectric permittivity, compared with silicon dioxide or silicon nitride. Then, electrical response properties, such as I-V curve and dependence of capacitance on hydrogen concentrations were analyzed in the temperature ranges of room temperature to 500°C for performance evaluation of the sensor.

Optimum Surface Roughness Prediction in Face Milling of High Silicon Stainless Steel

This paper presents an approach for the determination of the optimal cutting parameters (spindle speed, feed rate, depth of cut and engagement) leading to minimum surface roughness in face milling of high silicon stainless steel by coupling neural network (NN) and Electromagnetism-like Algorithm (EM). In this regard, the advantages of statistical experimental design technique, experimental measurements, artificial neural network, and Electromagnetism-like optimization method are exploited in an integrated manner. To this end, numerous experiments on this stainless steel were conducted to obtain surface roughness values. A predictive model for surface roughness is created by using a back propogation neural network, then the optimization problem was solved by using EM optimization. Additional experiments were performed to validate optimum surface roughness value predicted by EM algorithm. It is clearly seen that a good agreement is observed between the predicted values by EM coupled with feed forward neural network and experimental measurements. The obtained results show that the EM algorithm coupled with back propogation neural network is an efficient and accurate method in approaching the global minimum of surface roughness in face milling.

Comparative Analysis of Transient-Fault Tolerant Schemes for Network on Chips

Network on a chip (NoC) has been proposed as a viable solution to counter the inefficiency of buses in the current VLSI on-chip interconnects. However, as the silicon chip accommodates more transistors, the probability of transient faults is increasing, making fault tolerance a key concern in scaling chips. In packet based communication on a chip, transient failures can corrupt the data packet and hence, undermine the accuracy of data communication. In this paper, we present a comparative analysis of transient fault tolerant techniques including end-to-end, node-by-node, and stochastic communication based on flooding principle.

Electric Field and Potential Distributions along Surface of Silicone Rubber Polymer Insulators Using Finite Element Method

This paper presents the simulation the results of electric field and potential distributions along surface of silicone rubber polymer insulators. Near the same leakage distance subjected to 15 kV in 50 cycle salt fog ageing test, alternate sheds silicone rubber polymer insulator showed better contamination performance than straight sheds silicone rubber polymer insulator. Severe surface ageing was observed on the straight sheds insulator. The objective of this work is to elucidate that electric field distribution along straight sheds insulator higher than alternate shed insulator in salt fog ageing test. Finite element method (FEM) is adopted for this work. The simulation results confirmed the experimental data, as well.

Improvement of Photoluminescence Uniformity of Porous Silicon by using Stirring Anodization Process

The electrolyte stirring method of anodization etching process for manufacturing porous silicon (PS) is reported in this work. Two experimental setups of nature air stirring (PS-ASM) and electrolyte stirring (PS-ESM) are employed to clarify the influence of stirring mechanisms on electrochemical etching process. Compared to traditional fabrication without any stirring apparatus (PS-TM), a large plateau region of PS surface structure is obtained from samples with both stirring methods by the 3D-profiler measurement. Moreover, the light emission response is also improved by both proposed electrolyte stirring methods due to the cycling force in electrolyte could effectively enhance etch-carrier distribution while the electrochemical etching process is made. According to the analysis of statistical calculation of photoluminescence (PL) intensity, lower standard deviations are obtained from PS-samples with studied stirring methods, i.e. the uniformity of PL-intensity is effectively improved. The calculated deviations of PL-intensity are 93.2, 74.5 and 64, respectively, for PS-TM, PS-ASM and PS-ESM.

Impact of Height of Silicon Pillar on Vertical DG-MOSFET Device

Vertical Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is believed to suppress various short channel effect problems. The gate to channel coupling in vertical DG-MOSFET are doubled, thus resulting in higher current density. By having two gates, both gates are able to control the channel from both sides and possess better electrostatic control over the channel. In order to ensure that the transistor possess a superb turn-off characteristic, the subs-threshold swing (SS) must be kept at minimum value (60-90mV/dec). By utilizing SILVACO TCAD software, an n-channel vertical DG-MOSFET was successfully designed while keeping the sub-threshold swing (SS) value as minimum as possible. From the observation made, the value of sub-threshold swing (SS) was able to be varied by adjusting the height of the silicon pillar. The minimum value of sub-threshold swing (SS) was found to be 64.7mV/dec with threshold voltage (VTH) of 0.895V. The ideal height of the vertical DG-MOSFET pillar was found to be at 0.265 µm.

Vibration Reduction Module with Flexure Springs for Personal Tools

In the various working field, vibration may cause injurious to human body. Especially, in case of the vibration which is constantly and repeatedly transferred to the human. That gives serious physical problem, so called, Reynaud phenomenon. In this paper, we propose a vibration transmissibility reduction module with flexure mechanism for personal tools. At first, we select a target personal tool, grass cutter, and measure the level of vibration transmissibility on the hand. And then, we develop the concept design of the module that has stiffness for reduction the vibration transmissibility more than 20%, where the vibration transmissibility is measured with an accelerometer. In addition, the vibration reduction can be enhanced when the interior gap between inner and outer body is filled with silicone gel. This will be verified by the further experiment.

Design of Reliable and Low Cost Substrate Heater for Thin Film Deposition

The substrate heater designed for this investigation is a front side substrate heating system. It consists of 10 conventional tungsten halogen lamps and an aluminum reflector, total input electrical power of 5 kW. The substrate is heated by means of a radiation from conventional tungsten halogen lamps directed to the substrate through a glass window. This design allows easy replacement of the lamps and maintenance of the system. Within 2 to 6 minutes the substrate temperature reaches 500 to 830 C by varying the vertical distance between the glass window and the substrate holder. Moreover, the substrate temperature can be easily controlled by controlling the input power to the system. This design gives excellent opportunity to deposit many deferent films at deferent temperatures in the same deposition time. This substrate heater was successfully used for Chemical Vapor Deposition (CVD) of many thin films, such as Silicon, iron, etc.

Silicon-Waveguide Based Silicide Schottky- Barrier Infrared Detector for on-Chip Applications

We prove detailed analysis of a waveguide-based Schottky barrier photodetector (SBPD) where a thin silicide film is put on the top of a silicon-on-insulator (SOI) channel waveguide to absorb light propagating along the waveguide. Taking both the confinement factor of light absorption and the wall scanning induced gain of the photoexcited carriers into account, an optimized silicide thickness is extracted to maximize the effective gain, thereby the responsivity. For typical lengths of the thin silicide film (10-20 Ðçm), the optimized thickness is estimated to be in the range of 1-2 nm, and only about 50-80% light power is absorbed to reach the maximum responsivity. Resonant waveguide-based SBPDs are proposed, which consist of a microloop, microdisc, or microring waveguide structure to allow light multiply propagating along the circular Si waveguide beneath the thin silicide film. Simulation results suggest that such resonant waveguide-based SBPDs have much higher repsonsivity at the resonant wavelengths as compared to the straight waveguidebased detectors. Some experimental results about Si waveguide-based SBPD are also reported.

The Hardware Implementation of a Novel Genetic Algorithm

This paper presents a novel genetic algorithm, termed the Optimum Individual Monogenetic Algorithm (OIMGA) and describes its hardware implementation. As the monogenetic strategy retains only the optimum individual, the memory requirement is dramatically reduced and no crossover circuitry is needed, thereby ensuring the requisite silicon area is kept to a minimum. Consequently, depending on application requirements, OIMGA allows the investigation of solutions that warrant either larger GA populations or individuals of greater length. The results given in this paper demonstrate that both the performance of OIMGA and its convergence time are superior to those of existing hardware GA implementations. Local convergence is achieved in OIMGA by retaining elite individuals, while population diversity is ensured by continually searching for the best individuals in fresh regions of the search space.

A Generic and Extensible Spidergon NoC

The Globally Asynchronous Locally Synchronous Network on Chip (GALS NoC) is the most efficient solution that provides low latency transfers and power efficient System on Chip (SoC) interconnect. This study presents a GALS and generic NoC architecture based on a configurable router. This router integrates a sophisticated dynamic arbiter, the wormhole routing technique and can be configured in a manner that allows it to be used in many possible NoC topologies such as Mesh 2-D, Tree and Polygon architectures. This makes it possible to improve the quality of service (QoS) required by the proposed NoC. A comparative performances study of the proposed NoC architecture, Tore architecture and of the most used Mesh 2D architecture is performed. This study shows that Spidergon architecture is characterised by the lower latency and the later saturation. It is also shown that no matter what the number of used links is raised; the Links×Diameter product permitted by the Spidergon architecture remains always the lower. The only limitation of this architecture comes from it-s over cost in term of silicon area.

Effect of Concentration of Sodium Borohydrate on the Synthesis of Silicon Nanoparticles via Microemulsion Route

The effect of concentration of reduction agent of sodium borohydrate (NaBH4) on the properties of silicon nanoparticles synthesized via microemulsion route is reported. In this work, the concentration of the silicon tetrachloride (SiCl4) that served as silicon source with sodium hydroxide (NaOH) and polyethylene glycol (PEG) as stabilizer and surfactant, respectively, are keep fixed. Four samples with varied concentration of NaBH4 from 0.05 M to 0.20 M were synthesized. It was found that the lowest concentration of NaBH4 gave better formation of silicon nanoparticles.

Nonlinear Thermal Expansion Model for SiC/Al

The thermal expansion behaviour of silicon carbide (SCS-2) fibre reinforced 6061 aluminium matrix composite subjected to the influenced thermal mechanical cycling (TMC) process were investigated. The thermal stress has important effect on the longitudinal thermal expansion coefficient of the composites. The present paper used experimental data of the thermal expansion behaviour of a SiC/Al composite for temperatures up to 370°C, in which their data was used for carrying out modelling of theoretical predictions.

Lightweight Robotic Material Handling in Photovoltaic Module Manufacturing-Silicon Wafer and Thin Film Technologies

Today, the central role of industrial robots in automation in general and in material handling in particular is crystal clear. Based on the current status of Photovoltaics and by focusing on lightweight material handling, PV industry has turned into a potential candidate for introducing a fresh “pick and place" robot technology. Thus, to examine the industry needs in this regard, firstly the best suited applications for such robotic automation,and then the essential prerequisites in PV industry should be identified. The objective of this paper is to present holistic views on the industry trends, general automation status and existing challenges facing lightweight robotic material handling in PV Silicon Wafer and Thin Film technologies. The results of this study show that currently no uniform pick and place solution prevails among PV Silicon Wafer manufacturers and the industry calls for a new robot solution to satisfy its needs in new directions.