Abstract: Utilizing solar energy in producing electricity can minimize environmental pollution generated by fossil fuel in producing electricity. Our research was base on the extraction of dye from Roystonea regia fruit by using methanol as solvent. The dye extracts were used as sensitizers in Dye-sensitized solar cell (DSSCs). Study was done on the electrical properties from the extracts of Roystonea regia fruit as Dye-sensitized solar cell (DSSCs). The absorptions of the extracts and extracts with dye were determined at different wavelengths (350-1000nm). Absorption peak was observed at 1.339 at wavelength 400nm. The obtained values for methanol extract Roystonea regia extract are, Imp = 0.015mA, Vmp = 12.0mV, fill factor = 0.763, Isc= 0.018 mA and Voc = 13.1 mV and efficiency of 0.32%. .The phytochemical screening was taken and it was observed that Roystonea regia extract contained less of anthocyanin compared to flavonoids. The nanostructured dye sensitized solar cell (DSSC) will provide economically credible alternative to present day silicon p–n junction photovoltaic.
Abstract: Concrete durability as an important engineering property of concrete, determining the service life of concrete structures very significantly, can be threatened and even lost due to the interactions of concrete with external environment. Bio-corrosion process caused by presence and activities of microorganisms producing sulphuric acid is a special type of sulphate deterioration of concrete materials. The effects of sulphur-oxidizing bacteria Acidithiobacillus thiooxidans on various concrete samples, based on silica fume and zeolite, were investigated in laboratory during 180 days. A laboratory study was conducted to compare the performance of concrete samples in terms of the concrete deterioration influenced by the leaching of calcium and silicon compounds from the cement matrix. The changes in the elemental concentrations of calcium and silicon in both solid samples and liquid leachates were measured by using X – ray fluorescence method. Experimental studies confirmed the silica fume based concrete samples were found out to have the best performance in terms of both silicon and calcium ions leaching.
Abstract: In the present study, the effect of Si, Al, Ti, Zr, and Nb addition on the microstructure and hot workability of cast M42 tool steels, basically consisting of 1.0C, 0.2Mn, 3.8Cr, 1.5W, 8.5Co, 9.2Mo, and 1.0V in weight percent has been investigated. Tool steels containing Si of 0.25 and 0.5wt.%, Al of 0.06 and 0.12wt.%, Ti of 0.3wt.%, Zr of 0.3wt.%, and Nb of 0.3wt.% were cast into ingots of 140mm ´ 140mm ´ 330mm by vacuum induction melting. After solution treatment at 1150oC for 1.5hr followed by furnace cooling, hot rolling at 1180oC was conducted on the ingots. Addition of titanium, zirconium and niobium was found to retard the decomposition of the eutectic carbides and result in the deterioration of hot workability of the tool steels, while addition of aluminum and silicon showed relatively well decomposed carbide structure and resulted in sound hot rolled plates.
Abstract: A thin gold metal layer was deposited on the top of
silicon oxide films containing embedded Si nanocrystals (Si-nc). The
sample was annealed in a gas containing nitrogen, and subsequently
characterized by photoluminescence. We obtained 3-fold
enhancement of photon emission from the Si-nc embedded in silicon
dioxide covered with a Gold layer as compared with an uncovered
sample. We attribute this enhancement to the increase of the
spontaneous emission rate caused by the coupling of the Si-nc
emitters with the surface plasmons (SP). The evolution of PL
emission with laser irradiated time was also collected from covered
samples, and compared to that from uncovered samples. In an
uncovered sample, the PL intensity decreases with time,
approximately with two decay constants. Although the decrease of
the initial PL intensity associated with the increase of sample
temperature under CW pumping is still observed in samples covered
with a gold layer, this film significantly contributes to reduce the
permanent deterioration of the PL intensity. The resistance to
degradation of light-emitting silicon nanocrystals can be increased by
SP coupling to suppress the permanent deterioration. Controlling the
permanent photodeterioration can allow to perform a reliable optical
gain measurement.
Abstract: Many studies have been conducted on DC transmission. Of power apparatus for DC transmission, high voltage direct current (HVDC) cable systems are being evaluated because of the increase in power demand and transmission distance. Therefore, dc insulation characteristics of liquid silicone rubber (LSR), which has various advantages such as short curing time and the ease of maintenance, were investigated to assess its performance as a HVDC insulation material for cable joints. The electrical performance of LSR added to nano-aluminum trihydrate (ATH) were confirmed by measurements of the breakdown strength and electrical conductivity. In addition, field emission scanning electron microscope (FE-SEM) was used as a means of confirmation of nanofiller dispersion state. The LSR nanocomposite was prepared by compounding LSR filled nano-sized ATH filler. The dc insulation properties of LSR added to nano-sized ATH fillers were found to be superior to those of the LSR without a filler.
Abstract: Based upon generalized analysis of modern know-how in the sphere of processing, concentration and purification of iron-ore raw materials (IORM), in particular, the most widespread ferrioxide-silicate materials (FOSM), containing impurities of phosphorus and other elements compounds, noted special role of nanotechnological initiatives in improvement of such processes. Considered ideas of role of nanoparticles in processes of FOSM carbonization with subsequent direct reduction of ferric oxides contained in them to metal phase, as well as in processes of alkali treatment and separation of powered iron from phosphorus compounds. Using the obtained results the wasteless method of solid-phase processing, concentration and purification of IORM and FOSM from compounds of phosphorus, silicon and other impurities was developed and it excels known methods of direct iron reduction from iron ores and metallurgical slimes.
Abstract: The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber.
Abstract: Silica fume, also known as microsilica (MS) or
condensed silica fume is a by-product of the production of silicon
metal or ferrosilicon alloys. Silica fume is one of the most effective
pozzolanic additives which could be used for ultrahigh performance
and other types of concrete. Despite the fact, however is not entirely
clear, which amount of silica fume is most optimal for UHPC. Main
objective of this experiment was to find optimal amount of silica
fume for UHPC with and without thermal treatment, when different
amount of quartz powder is substituted by silica fume. In this work
were investigated four different composition of UHPC with different
amount of silica fume. Silica fume were added 0, 10, 15 and 20% of
cement (by weight) to UHPC mixture. Optimal amount of silica fume
was determined by slump, viscosity, qualitative and quantitative
XRD analysis and compression strength tests methods.
Abstract: Silicon substrates coated with multiwalled carbon nanotubes (MWCNTs) were experimentally investigated to determine spark breakdown voltages relative to uncoated surfaces, the degree of surface degradation associated with the spark discharge, and techniques to minimize the surface degradation. The results may be applicable to instruments or processes that use MWCNT as a means of increasing local electric field strength and where spark breakdown is a possibility that might affect the devices’ performance or longevity. MWCNTs were shown to reduce the breakdown voltage of a 1mm gap in air by 30-50%. The relative decrease in breakdown voltage was maintained over gap distances of 0.5 to 2mm and gauge pressures of 0 to 4 bar. Degradation of the MWCNT coated surfaces was observed. Several techniques to improve durability were investigated. These included: chromium and gold-palladium coatings, tube annealing, and embedding clusters of MWCNT in a ceramic matrix.
Abstract: In Pharmaceutical industries, it is very important to remove drug residues from the equipment and areas used. The cleaning procedure must be validated, so special attention must be devoted to the methods used for analysis of trace amounts of drugs. A rapid, sensitive and specific reverse phase ultra performance liquid chromatographic (UPLC) method was developed for the quantitative determination of Albendazole in cleaning validation swab samples. The method was validated using an ACQUITY HSS C18, 50 x 2.1mm, 1.8μ column with a isocratic mobile phase containing a mixture of 1.36g of Potassium dihydrogenphosphate in 1000mL MilliQ water, 2mL of triethylamine and pH adjusted to 2.3 ± 0.05 with ortho-phosphoric acid, Acetonitrile and Methanol (50:40:10 v/v). The flow rate of the mobile phase was 0.5 mL min-1 with a column temperature of 350C and detection wavelength at 254nm using PDA detector. The injection volume was 2µl. Cotton swabs, moisten with acetonitrile were used to remove any residue of drug from stainless steel, teflon, rubber and silicon plates which mimic the production equipment surface and the mean extraction-recovery was found to be 91.8. The selected chromatographic condition was found to effectively elute Albendazole with retention time of 0.67min. The proposed method was found to be linear over the range of 0.2 to 150µg/mL and correlation coefficient obtained is 0.9992. The proposed method was found to be accurate, precise, reproducible and specific and it can also be used for routine quality control analysis of these drugs in biological samples either alone or in combined pharmaceutical dosage forms.
Abstract: We present the design of Analog front end (AFE) low noise pre-amplifier implemented in a high voltage 0.18-µm CMOS technology for a three dimensional ultrasound bio microscope (3D UBM) application. The fabricated chip has 4X16 pre-amplifiers implemented to interface a 2-D array of high frequency capacitive micro-machined ultrasound transducers (CMUT). Core AFE cell consists of a high-voltage pulser in the transmit path, and a low-noise transimpedance amplifier in the receive path. Proposed system offers a high image resolution by the use of high frequency CMUTs with associated high performance imaging electronics integrated together. Performance requirements and the design methods of the high bandwidth transimpedance amplifier are described in the paper. A single cell of transimpedance (TIA) amplifier and the bias circuit occupies a silicon area of 250X380 µm2 and the full chip occupies a total silicon area of 10x6.8 mm².
Abstract: The mechanism of nickel (Ni) metallization in silicon-germanium (Si0.5Ge0.5) alloy nanowire (NW) was studied. Transmission electron microscope imaging with in-situ annealing was conducted at temperatures of 200oC to 600°C. During rapid formation of Ni germanosilicide, loss of material from from the SiGe NW occurred which led to the formation of a thin Ni germanosilicide filament and eventual void. Energy dispersive X-ray spectroscopy analysis along the SiGe NW before and after annealing determined that Ge atoms tend to out-diffuse from the Ni germanosilicide towards the Ni source in the course of annealing. A model for the Ni germanosilicide formation in SiGe NW is proposed to explain this observation.
Abstract: Silicon photonics has generated an increasing interest in recent years mainly for optical communications optical interconnects in microelectronic circuits or bio-sensing applications. The development of elementary passive and active components (including detectors and modulators), which are mainly fabricated on the silicon on insulator platform for CMOS-compatible fabrication, has reached such a performance level that the integration challenge of silicon photonics with microelectronic circuits should be addressed. Since crystalline silicon can only be grown from another silicon crystal, making it impossible to deposit in this state, the optical devices are typically limited to a single layer. An alternative approach is to integrate a photonic layer above the CMOS chip using back-end CMOS fabrication process. In this paper, various materials, including silicon nitride, amorphous silicon, and polycrystalline silicon, for this purpose are addressed.
Abstract: Silicon photonics is merging as a unified platform for driving photonic based telecommunications and for local photonic based interconnect but it suffers from large footprint as compared with the nanoelectronics. Plasmonics is an attractive alternative for nanophotonics. In this work, two CMOS compatible plasmonic waveguide platforms are compared. One is the horizontal metal-insulator-Si-insulator-metal nanoplasmonic waveguide and the other is metal-insulator-Si hybrid plasmonic waveguide. Various passive and active photonic devices have been experimentally demonstrated based on these two plasmonic waveguide platforms.
Abstract: A silicon photomultiplier (SiPM) was designed, fabricated and characterized. The SiPM was based on SACM (Separation of Absorption, Charge and Multiplication) structure, which was optimized for blue light detection in application of positron emission tomography (PET). The achieved SiPM array has a high geometric fill factor of 64% and a low breakdown voltage of about 22V, while the temperature dependence of breakdown voltage is only 17mV/°C. The gain and photon detection efficiency of the device achieved were also measured under illumination of light at 405nm and 460nm wavelengths. The gain of the device is in the order of 106. The photon detection efficiency up to 60% has been observed under 1.8V overvoltage.
Abstract: This paper presents device simulations on the vertical silicon nanowire tunneling FET (VSiNW TFET). Simulations show that a narrow nanowire and thin gate oxide is required for good performance, which is expected even for conventional MOSFETs. The gate length also needs to be more than the nanowire diameter to prevent short channel effects. An effect more unique to TFET is the need for abrupt source to channel junction, which is shown to improve the performance. The ambipolar effect suppression by reducing drain doping concentration is also explored and shown to have little or no effect on performance.
Abstract: There are many classical algorithms for finding
routing in FPGA. But Using DNA computing we can solve the routes
efficiently and fast. The run time complexity of DNA algorithms is
much less than other classical algorithms which are used for solving
routing in FPGA. The research in DNA computing is in a primary
level. High information density of DNA molecules and massive
parallelism involved in the DNA reactions make DNA computing a
powerful tool. It has been proved by many research accomplishments
that any procedure that can be programmed in a silicon computer can
be realized as a DNA computing procedure. In this paper we have
proposed two tier approaches for the FPGA routing solution. First,
geometric FPGA detailed routing task is solved by transforming it
into a Boolean satisfiability equation with the property that any
assignment of input variables that satisfies the equation specifies a
valid routing. Satisfying assignment for particular route will result in
a valid routing and absence of a satisfying assignment implies that
the layout is un-routable. In second step, DNA search algorithm is
applied on this Boolean equation for solving routing alternatives
utilizing the properties of DNA computation. The simulated results
are satisfactory and give the indication of applicability of DNA
computing for solving the FPGA Routing problem.
Abstract: The porous silicon (PS), formed from the anodization
of a p+ type substrate silicon, consists of a network organized in a
pseudo-column as structure of multiple side ramifications. Structural
micro-topology can be interpreted as the fraction of the interconnected
solid phase contributing to thermal transport. The
reduction of dimensions of silicon of each nanocristallite during the
oxidation induced a reduction in thermal conductivity. Integration of
thermal sensors in the Microsystems silicon requires an effective
insulation of the sensor element. Indeed, the low thermal conductivity
of PS consists in a very promising way in the fabrication of integrated
thermal Microsystems.In this work we are interesting in the
measurements of thermal conductivity (on the surface and in depth)
of PS by the micro-Raman spectroscopy. The thermal conductivity is
studied according to the parameters of anodization (initial doping and
current density. We also, determine porosity of samples by
spectroellipsometry.
Abstract: This study presents design of a carbon silicon electrode
for iontophorsis treatment towards alopecia. The alopecia is a medical
description means loss of hair from the body. For solving this problem,
the drug need to be delivered into the scalp, therefore, the
iontophoresis was chosen to use in this treatment. However, almost
common electrodes of iontophoresis device are made with metal
material, the electrodes could give patients hurt when they using it, and
it is hard to avoid the hair for attaching the hair. For this reason, an
electrode is made with silicon material to decrease the hurt from the
electrodes, and the carbon material is mixed in it for increasing
conductance. The several cones with stainless material on the
electrode make the electrode is able to void hair to attach the affected
part. According to the results of a vivo-experiment, the carbon silicon
electrode showed a good performance and in treatment comfortably.
Abstract: The deposition of diamond films on a Si3N4 substrate
is an attractive technique for industrial applications because of the
excellent properties of diamond. Pretreatment of substrate is very
important prior to diamond deposition to promote nucleation and
adhesion between coating and substrate. Deposition of
nanocrystalline diamonds films on silicon nitride substrate have been
carried out by HF-CVD technique using mixture of methane and
hydrogen gases. Different pretreatment of substrate including
chemical etching consists of hot acid etching and basic etching and
mechanical etching were used to study the quality of diamond formed
on the substrate. The structure and morphology of diamond coating
have been studied using X-ray Diffraction (XRD) and Scanning
Electron Microscope (SEM) while diamond film quality has been
characterized using Raman spectroscopy. AFM was used to
investigate the effect of chemical etching and mechanical
pretreatment on the surface roughness of the substrates and the
resultant morphology of nanocrystalline diamond. It was found that
diamond film deposited on as-received, basic etched and grinded
substrate shows the morphology of cauliflower while blasted and
acidic etched substrates produce smooth, continuous diamond film.
However, the Raman investigation did not show any deviation in
quality of diamond film for any pretreatment.