Light Emission Enhancement of Silicon Nanocrystals by Gold Layer

A thin gold metal layer was deposited on the top of
silicon oxide films containing embedded Si nanocrystals (Si-nc). The
sample was annealed in a gas containing nitrogen, and subsequently
characterized by photoluminescence. We obtained 3-fold
enhancement of photon emission from the Si-nc embedded in silicon
dioxide covered with a Gold layer as compared with an uncovered
sample. We attribute this enhancement to the increase of the
spontaneous emission rate caused by the coupling of the Si-nc
emitters with the surface plasmons (SP). The evolution of PL
emission with laser irradiated time was also collected from covered
samples, and compared to that from uncovered samples. In an
uncovered sample, the PL intensity decreases with time,
approximately with two decay constants. Although the decrease of
the initial PL intensity associated with the increase of sample
temperature under CW pumping is still observed in samples covered
with a gold layer, this film significantly contributes to reduce the
permanent deterioration of the PL intensity. The resistance to
degradation of light-emitting silicon nanocrystals can be increased by
SP coupling to suppress the permanent deterioration. Controlling the
permanent photodeterioration can allow to perform a reliable optical
gain measurement.

• R. Karmouch

• Photodeterioration
• Silicon Nanocrystals
• Ion Implantation
• Photoluminescence
• Surface Plasmons.

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