Abstract: A generalized method for small-signal simulation of
avalanche noise in Mixed Tunneling Avalanche Transit Time
(MITATT) device is presented in this paper where the effect of series
resistance is taken into account. The method is applied to a
millimeter-wave Double Drift Region (DDR) MITATT device based
on Silicon to obtain noise spectral density and noise measure as a
function of frequency for different values of series resistance. It is
found that noise measure of the device at the operating frequency
(122 GHz) with input power density of 1010 Watt/m2 is about 35 dB
for hypothetical parasitic series resistance of zero ohm (estimated
junction temperature = 500 K). Results show that the noise measure
increases as the value of parasitic resistance increases.
Abstract: This paper presents the experimental results of silicone rubber outdoor polymer insulators in salt fog ageing test based on IEC 61109. Specimens made ofHTV silicone rubber with ATH content having three different configurations, straight shedsalternated sheds, and incline and alternate sheds, were tested continuously 1000 hrs.in artificial salt fog chamber. Contamination level, reduction of hydrophobicity and hardness measurement were used as physical damaged inspection techniques to evaluate degree of surface deterioration. In addition, chemical changing of tested specimen surface was evaluated by ATR-FTIRto confirm physical damaged inspection. After 1000 hrs.of salt fog test, differences in degree of surface deterioration were observed on all tested specimens. Physical damaged inspection and chemical analysis results confirmed the experimental results as well.
Abstract: Shrunken patterning for integrated device
manufacturing requires surface cleanliness and surface smoothness in
wet chemical processing [1]. It is necessary to control all process
parameters perfectly especially for the common cleaning technique
RCA clean (SC-1 and SC-2) [2]. In this paper the characteristic and
effect of surface preparation parameters are discussed. The properties
of RCA wet chemical processing in silicon technology is based on
processing time, temperature, concentration and megasonic power of
SC-1 and QDR. An improvement of wafer surface preparation by
the enhanced variables of the wet cleaning chemical process is
proposed.
Abstract: The steam cracking reactions are always accompanied with the formation of coke which deposits on the walls of the tubular reactors. The investigation has attempted to control catalytic coking by the applying aluminum, zinc and ceramic coating like aluminum-magnesium by thermal spray and pack cementation method. Rate of coke formation during steam cracking of naphtha has been investigated both for uncoated stainless steel (with different alloys) and metal coating constructed with thermal Spray and pack cementation method with metal powders of Aluminum, Aluminum-Magnesium, zinc, silicon, nickel and chromium. The results of the study show that passivating the surface of SS321 with a coating of Aluminum and Aluminum-Magnesium can significantly reduce the rate of coke deposition during naphtha pyrolysis. SEM and EDAX techniques (Philips XL Series) were used to examine the coke deposits formed by the metal-hydrocarbon reactions. Our objective was to separate the different stages by identifying the characteristic morphologies.
Abstract: In this paper we present the modeling, design, and
experimental testing of a nerve cuff multi-electrode system for
diameter-selective vagus nerve stimulation.
The multi-electrode system contained ninety-nine platinum
electrodes embedded within a self-curling spiral silicone sheet. The
electrodes were organized in a matrix having nine parallel groups,
each containing eleven electrodes.
Preliminary testing of the nerve cuff was performed in an isolated
segment of a swinish left cervical vagus nerve. For selective vagus
nerve stimulation, precisely defined current quasitrapezoidal,
asymmetric and biphasic stimulating pulses were applied to
preselected locations along the left vagus segment via appointed
group of three electrodes within the cuff. Selective stimulation was
obtained by anodal block. However, these pulses may not be safe for
a long-term application because of a frequently used high imbalance
between the cathodic and anodic part of the stimulating pulse.
Preliminary results show that the cuff was capable of exciting A
and B-fibres, and, that for a certain range of parameters used in
stimulating pulses, the contribution of A-fibres to the CAP was
slightly reduced and the contribution of B-fibres was slightly larger.
Results also showed that measured CAPs are not greatly
influenced by the imbalance between a charge Qc injected in cathodic
and Qa in anodic phase of quasitrapezoidal, asymmetric and biphasic
pulses.
Abstract: This paper presents the simulation results of electric field and potential distributions along surface of silicone rubber polymer insulators under clean and various contamination conditions with/without water droplets. Straight sheds insulator having leakage distance 290 mm was used in this study. Two type of contaminants, playwood dust and cement dust, have been studied the effect of contamination on the insulator surface. The objective of this work is to comparison the effect of contamination on potential and electric field distributions along the insulator surface when water droplets exist on the insulator surface. Finite element method (FEM) is adopted for this work. The simulation results show that contaminations have no effect on potential distribution along the insulator surface while electric field distributions are obviously depended on contamination conditions.
Abstract: A closed-loop controlled wireless power transmission circuit block for implantable biomedical applications is described in this paper. The circuit consists of one front-end rectifier, power management sub-block including bandgap reference and low drop-out regulators (LDOs) as well as transmission power detection / feedback circuits. Simulation result shows that the front-end rectifier achieves 80% power efficiency with 750-mV single-end peak-to-peak input voltage and 1.28-V output voltage under load current of 4 mA. The power management block can supply 1.8mA average load current under 1V consuming only 12μW power, which is equivalent to 99.3% power efficiency. The wireless power transmission block described in this paper achieves a maximum power efficiency of 80%. The wireless power transmission circuit block is designed and implemented using UMC 65-nm CMOS/RF process. It occupies 1 mm × 1.2 mm silicon area.
Abstract: There are few studies on eggshell of leatherback turtle
which is endangered species in Thailand. This study was focusing on
the ultrastructure and elemental composition of leatherback turtle
eggshells collected from Andaman Sea Shore, Thailand during the
nesting season using scanning electron microscope (SEM). Three
eggshell layers of leatherback turtle; the outer cuticle layer or
calcareous layer, the middle layer or middle multistrata layer and the
inner fibrous layer were recognized. The outer calcareous layer was
thick and porosity which consisted of loose nodular units of various
crystal shapes and sizes. The loose attachment between these units
resulted in numerous spaces and openings. The middle layer was
compact thick with several multistrata and contained numerous
openings connecting to both outer cuticle layer and inner fibrous
layer. The inner fibrous layer was compact and thin, and composed of
numerous reticular fibers. Energy dispersive X-ray microanalysis
detector revealed energy spectrum of X-rays character emitted from
all elements on each layer. The percentages of all elements were
found in the following order: carbon (C) > oxygen (O) > calcium
(Ca) > sulfur (S) > potassium (K) > aluminum (Al) > iodine (I) >
silicon (Si) > chlorine (Cl) > sodium (Na) > fluorine (F) >
phosphorus (P) > magnesium (Mg). Each layer consisted of high
percentage of CaCO3 (approximately 98%) implying that it was
essential for turtle embryonic development. A significant difference
was found in the percentages of Ca and Mo in the 3layers. Moreover,
transition metal, metal and toxic non-metal contaminations were
found in leatherback turtle eggshell samples. These were palladium
(Pd), molybdenum (Mo), copper (Cu), aluminum (Al), lead (Pb), and
bromine (Br). The contamination elements were seen in the outer
layers except for Mo. All elements were readily observed and
mapped using Smiling program. X-ray images which mapped the
location of all elements were showed. Calcium containing in the
eggshell appeared in high contents and was widely distributing in
clusters of the outer cuticle layer to form CaCO3 structure. Moreover,
the accumulation of Na and Cl was observed to form NaCl which was
widely distributing in 3 eggshell layers. The results from this study
would be valuable on assessing the emergent success in this
endangered species.
Abstract: We present a dextran modified silicon microring
resonator sensor for high density antibody immobilization. An array
of sensors consisting of three sensor rings and a reference ring was
fabricated and its surface sensitivity and the limit of detection were
obtained using polyelectrolyte multilayers. The mass sensitivity and
the limit of detection of the fabricated sensor ring are 0.35 nm/ng
mm-2 and 42.8 pg/mm2 in air, respectively. Dextran modified sensor
surface was successfully prepared by covalent grafting of oxidized
dextran on 3-aminopropyltriethoxysilane (APTES) modified silicon
sensor surface. The antibody immobilization on hydrogel dextran
matrix improves 40% compared to traditional antibody
immobilization method via APTES and glutaraldehyde linkage.
Abstract: The threshold voltage and capacitance voltage characteristics of ultra-thin Silicon-on-Insulator MOSFET are greatly influenced by the thickness and doping concentration of the silicon film. In this work, the capacitance voltage characteristics and threshold voltage of the device have been analyzed with quantum mechanical effects using the Self-Consistent model. Reduction of channel thickness and adding doping impurities cause an increase in the threshold voltage. Moreover, the temperature effects cause a significant amount of threshold voltage shift. The temperature dependence of threshold voltage has also been observed with Self- Consistent approach which are well supported from experimental performance of practical devices.
Abstract: The present paper presents a finite element model and
analysis for the interaction between a piezoresistive tactile sensor and
biological tissues. The tactile sensor is proposed for use in minimally
invasive surgery to deliver tactile information of biological tissues to
surgeons. The proposed sensor measures the relative hardness of soft
contact objects as well as the contact force. Silicone rubbers were
used as the phantom of biological tissues. Finite element analysis of
the silicone rubbers and the mechanical structure of the sensor were
performed using COMSOL Multiphysics (v3.4) environment. The
simulation results verify the capability of the sensor to be used to
differentiate between different kinds of silicone rubber materials.
Abstract: This paper presents the experimental results of silicone rubber polymer insulators for 22 kV systems under salt water dip wheel test based on IEC 62217. Straight shed silicone rubber polymer insulators having leakage distance 685 mm were tested continuously 30,000 cycles. One test cycle includes 4 positions, energized, de-energized, salt water dip and deenergized, respectively. For one test cycle, each test specimen remains stationary for about 40 second in each position and takes 8 second for rotate to next position. By visual observation, sever surface erosion was observed on the trunk near the energized end of tested specimen. Puncture was observed on the upper shed near the energized end. In addition, decreasing in hydrophobicity and increasing in hardness were measured on tested specimen comparing with new specimen. Furthermore, chemical analysis by ATR-FTIR was conducted in order to elucidate the chemical change of tested specimens comparing with new specimen.
Abstract: Ultrathin (UTD) and Nanoscale (NSD) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46nm and 1.6nm respectively, were fabricated using a selective “gate recessed” process on the same silicon wafer. The electrical transport characterization at room temperature has shown a large difference between the two kinds of devices and has been interpreted in terms of a huge unexpected series resistance. Electrical characteristics of the Nanoscale device, taken in the linear region, can be analytically derived from the ultrathin device ones. A comparison of the structure and composition of the layers, using advanced techniques such as Focused Ion Beam (FIB) and High Resolution TEM (HRTEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), contributes an explanation as to the difference of transport between the devices.
Abstract: Over the past years, the EMCCD has had a profound
influence on photon starved imaging applications relying on its unique
multiplication register based on the impact ionization effect in the
silicon. High signal-to-noise ratio (SNR) means high image quality.
Thus, SNR improvement is important for the EMCCD. This work
analyzes the SNR performance of an EMCCD with gain off and on. In
each mode, simplified SNR models are established for different
integration times. The SNR curves are divided into readout noise (or
CIC) region and shot noise region by integration time. Theoretical
SNR values comparing long frame integration and frame adding in
each region are presented and discussed to figure out which method is
more effective. In order to further improve the SNR performance,
pixel binning is introduced into the EMCCD. The results show that
pixel binning does obviously improve the SNR performance, but at the
expensive of the spatial resolution.
Abstract: In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.
Abstract: This paper uses quasi-steady molecular statics model
and diamond tool to carry out simulation temperature rise of nanoscale
orthogonal cutting single-crystal silicon. It further qualitatively
analyzes temperature field of silicon workpiece without considering
heat transfer and considering heat transfer. This paper supposes that
the temperature rise of workpiece is mainly caused by two heat sources:
plastic deformation heat and friction heat. Then, this paper develops a
theoretical model about production of the plastic deformation heat and
friction heat during nanoscale orthogonal cutting. After the increased
temperature produced by these two heat sources are added up, the
acquired total temperature rise at each atom of the workpiece is
substituted in heat transfer finite difference equation to carry out heat
transfer and calculates the temperature field in each step and makes
related analysis.
Abstract: In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage.
Abstract: Films of pure tin oxide SnO2 and in presence of
antimony atoms (SnO2-Sb) deposited onto glass substrates have
shown a sufficiently high energy gap to be transparent in the visible
region, a high electrical mobility and a carrier concentration which
displays a good electrical conductivity [1]. In this work, the effects of
polycrystalline silicon substrate on the optical properties of pure and
Sb doped tin oxide is investigated.
We used the APCVD (atmospheric pressure chemical vapour
deposition) technique, which is a low-cost and simple technique,
under nitrogen ambient, for growing this material. A series of SnO2
and SnO2-Sb have been deposited onto polycrystalline silicon
substrates with different contents of antimony atoms at the same
conditions of deposition (substrate temperature, flow oxygen,
duration and nitrogen atmosphere of the reactor). The effect of the
substrate in terms of morphology and nonlinear optical properties,
mainly the reflectance, was studied. The reflectance intensity of the
device, compared to the reflectance of tin oxide films deposited
directly on glass substrate, is clearly reduced on the overall
wavelength range. It is obvious that the roughness of the poly-c
silicon plays an important role by improving the reflectance and
hence the optical parameters.
A clear shift in the minimum of the reflectance upon doping level
is observed. This minimum corresponds to strong free carrier
absorption, resulting in different plasma frequency. This effect is
followed by an increase in the reflectance depending of the antimony
doping. Applying the extended Drude theory to the combining
optical and electrical obtained results these effects are discussed.
Abstract: The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible micro- Raman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer resulting from a wafer bowing, while the UV micro-Raman indicates a tensile interfacial stress induced at the top GaN/AlGaN/AlN layers. PL shows a good crystal quality GaN channel where the yellow band intensity is very low compared to that of the near-band-edge transition. The uniformity of this sample is shown by measurements from several points across the epiwafer.
Abstract: The beneficial effects of Si are mainly associated with
its high deposition in plant tissue and enhancing their strength and
rigidity. We investigated the role of Si against cadmium stress in
(Echium C) in house green condition. When the seventh leaves was
be appeared, plants were pretreated with five levels of Si: 0, 0.2, 0.5,
0.7and 1.5 mM Si (as sodium trisilicate, Na2(SiO2)3) and after that
plants were treated with two levels of Cd (30 and 90 mM). The
effects of Silicon and Cd were investigated on some physiological
and biochemical parameters such as: lipid peroxidation
(malondialdehyde (MDA) and other aldehydes, antocyanin and
flavonoid content. Our results showed that Cd significantly increased
MDA, other aldehydes, antocyanin and flavonoids content in
Echium and silicon offset the negative effect and increased tolerance
of Echium against Cd stress. From this results we concluded that Si
increase membrane integrity and antioxidative ability in this plant
against cd stress.