Abstract: This paper uses quasi-steady molecular statics model
and diamond tool to carry out simulation temperature rise of nanoscale
orthogonal cutting single-crystal silicon. It further qualitatively
analyzes temperature field of silicon workpiece without considering
heat transfer and considering heat transfer. This paper supposes that
the temperature rise of workpiece is mainly caused by two heat sources:
plastic deformation heat and friction heat. Then, this paper develops a
theoretical model about production of the plastic deformation heat and
friction heat during nanoscale orthogonal cutting. After the increased
temperature produced by these two heat sources are added up, the
acquired total temperature rise at each atom of the workpiece is
substituted in heat transfer finite difference equation to carry out heat
transfer and calculates the temperature field in each step and makes
related analysis.