The Effects of RCA Clean Variables on Particle Removal Efficiency
Shrunken patterning for integrated device
manufacturing requires surface cleanliness and surface smoothness in
wet chemical processing [1]. It is necessary to control all process
parameters perfectly especially for the common cleaning technique
RCA clean (SC-1 and SC-2) [2]. In this paper the characteristic and
effect of surface preparation parameters are discussed. The properties
of RCA wet chemical processing in silicon technology is based on
processing time, temperature, concentration and megasonic power of
SC-1 and QDR. An improvement of wafer surface preparation by
the enhanced variables of the wet cleaning chemical process is
proposed.
[1] R. Schaller, "Moore's Law: Past, Present, and Future", IEEE Spectrum,
June 1997, pp. 52-59.
[2] W. Kern and D. Puitonen, "RCA Rev.", vol. 31, (1970) p.187.
[3] K.Kubo, S.Ojima, M.Toda, T.Ohmi, " Study on Megasonic in Advanced
Wet Cleaning Process", Electrochemical Society Proceedings Volume
95-20, 2000, pp.107-111.
[4] Holly Linkowich, "Filtration of Alumina-based Slurry for Tungsten
CMO", Future Fab Intl, vol.11, 2001.
[5] Kern W, "Handbook of Semiconductor Wafer Cleaning Technology",
New Jersey, Noyes Publication, 1993.
[6] Yanglae Lee, Euisu Lim,Kookjin Kang,Hyunse Kim, Tae-Gon Kim,
Sang Ho Lee and Jin Goo Park, "Acoustic Field Analysis of a T Type
Waveguide in Single Wafer Megasonic Cleaning and Its Effect on
Particle Removal", Solid State Phenomena Vol. 134, 2008, pp.229-232
[7] Heyn, "Cost-effective cleaning and high quality thin gate oxides", IBM
Journal of Research and Development, 1999.
[8] P. J. Resnick, C. L. J. Adkins, P. J. Clews, E. V. Thomas, and S. T.
Cannaday, "A Design of Experiments Approach to an Optimized SC-1
clean for Sub-0.15 Micron Pparticle Removal ", Contamination Free
Manufacturing Research Center, 1995.
[9] Meuris, M, M. M Heyns, P. W. Mertens, S, Verhaverbeke, and A.
Philipossian, " Microcontamination" , 1992.
[10] Janakiram M, "Cycle Time Reduction at Motorola's ACT Fab",
presented at the 7th Annual IEEE/SEMI Advanced Semiconductor
Manufacturing Conference and Workshop, Cambridge, MA, November
12ÔÇö14, 1996.
[1] R. Schaller, "Moore's Law: Past, Present, and Future", IEEE Spectrum,
June 1997, pp. 52-59.
[2] W. Kern and D. Puitonen, "RCA Rev.", vol. 31, (1970) p.187.
[3] K.Kubo, S.Ojima, M.Toda, T.Ohmi, " Study on Megasonic in Advanced
Wet Cleaning Process", Electrochemical Society Proceedings Volume
95-20, 2000, pp.107-111.
[4] Holly Linkowich, "Filtration of Alumina-based Slurry for Tungsten
CMO", Future Fab Intl, vol.11, 2001.
[5] Kern W, "Handbook of Semiconductor Wafer Cleaning Technology",
New Jersey, Noyes Publication, 1993.
[6] Yanglae Lee, Euisu Lim,Kookjin Kang,Hyunse Kim, Tae-Gon Kim,
Sang Ho Lee and Jin Goo Park, "Acoustic Field Analysis of a T Type
Waveguide in Single Wafer Megasonic Cleaning and Its Effect on
Particle Removal", Solid State Phenomena Vol. 134, 2008, pp.229-232
[7] Heyn, "Cost-effective cleaning and high quality thin gate oxides", IBM
Journal of Research and Development, 1999.
[8] P. J. Resnick, C. L. J. Adkins, P. J. Clews, E. V. Thomas, and S. T.
Cannaday, "A Design of Experiments Approach to an Optimized SC-1
clean for Sub-0.15 Micron Pparticle Removal ", Contamination Free
Manufacturing Research Center, 1995.
[9] Meuris, M, M. M Heyns, P. W. Mertens, S, Verhaverbeke, and A.
Philipossian, " Microcontamination" , 1992.
[10] Janakiram M, "Cycle Time Reduction at Motorola's ACT Fab",
presented at the 7th Annual IEEE/SEMI Advanced Semiconductor
Manufacturing Conference and Workshop, Cambridge, MA, November
12ÔÇö14, 1996.
@article{"International Journal of Electrical, Electronic and Communication Sciences:55404", author = "Siti Kudnie Sahari and Jane Chai Hai Sing and Khairuddin Ab. Hamid", title = "The Effects of RCA Clean Variables on Particle Removal Efficiency", abstract = "Shrunken patterning for integrated device
manufacturing requires surface cleanliness and surface smoothness in
wet chemical processing [1]. It is necessary to control all process
parameters perfectly especially for the common cleaning technique
RCA clean (SC-1 and SC-2) [2]. In this paper the characteristic and
effect of surface preparation parameters are discussed. The properties
of RCA wet chemical processing in silicon technology is based on
processing time, temperature, concentration and megasonic power of
SC-1 and QDR. An improvement of wafer surface preparation by
the enhanced variables of the wet cleaning chemical process is
proposed.", keywords = "RCA, SC-1, SC-2, QDR", volume = "3", number = "2", pages = "234-3", }