Abstract: TiO2 thin films have been prepared by the sol-gel dipcoating
technique in order to elaborate antireflective thin films for
monocrystalline silicon (mono-Si). The titanium isopropoxyde was
chosen as a precursor with hydrochloric acid as a catalyser for
preparing a stable solution. The optical properties have been tailored
with varying the solution concentration, the withdrawn speed, and the
heat-treatment. We showed that using a TiO2 single layer with 64.5
nm in thickness, heat-treated at 450°C or 300°C reduces the mono-Si
reflection at a level lower than 3% over the broadband spectral
domains [669-834] nm and [786-1006] nm respectively. Those latter
performances are similar to the ones obtained with double layers of
low and high refractive index glasses respectively.
Abstract: Carbon nanotube is one of the most attractive materials
for the potential applications of nanotechnology due to its excellent
mechanical, thermal, electrical and optical properties. In this paper we
report a supercapacitor made of nickel foil electrodes, coated with
multiwall carbon nanotubes (MWCNTs) thin film using
electrophoretic deposition (EPD) method. Chemical vapor deposition
method was used for the growth of MWCNTs and ethanol was used as
a hydrocarbon source. High graphitic multiwall carbon nanotube was
found at 750oC analyzing by Raman spectroscopy. We observed the
electrochemical performance of supercapacitor by cyclic
voltammetry. The electrodes of supercapacitor fabricated from
MWCNTs exhibit considerably small equivalent series resistance
(ESR), and a high specific power density. Electrophoretic deposition
is an easy method in fabricating MWCNT electrodes for high
performance supercapacitor.
Abstract: Nitrogen-doped graphene quantum dots (N-GQDs)
were fabricated by microwave-assisted hydrothermal technique. The
optical properties of the N-GQDs were studied. The luminescence of
the N-GQDs can be tuned by varying the excitation wavelength.
Furthermore, two-photon luminescence of the N-GQDs excited by
near-infrared laser can be obtained. It is shown that N-doping play a
key role on two-photon luminescence. The N-GQDs are expected to
find application in biological applications including bioimaging and
sensing.
Abstract: Hydrogenated amorphous carbon (a-C:H) films have
been synthesized by a radio frequency plasma enhanced chemical
vapor deposition (rf-PECVD) technique with different bias voltage
from 0.0 to -0.5 kV. The Raman spectra displayed the polymer-like
hydrogenated amorphous carbon (PLCH) film with 0.0 to -0.1 and
a-C:H films with -0.2 to -0.5 kV of bias voltages. The surface chemical
information of all films were studied by X-ray photoelectron
spectroscopy (XPS) technique, presented to C-C (sp2 and sp3) and C-O
bonds, and relative carbon (C) and oxygen (O) atomics contents. The
O contamination had affected on structure and optical properties. The
true density of PLCH and a-C:H films were characterized by X-ray
refractivity (XRR) method, showed the result as in the range of
1.16-1.73 g/cm3 that depending on an increasing of bias voltage. The
hardness was proportional to the true density of films. In addition, the
optical properties i.e. refractive index (n) and extinction coefficient (k)
of these films were determined by a spectroscopic ellipsometry (SE)
method that give formation to in 1.62-2.10 (n) and 0.04-0.15 (k)
respectively. These results indicated that the optical properties
confirmed the Raman results as presenting the structure changed with
applied bias voltage increased.
Abstract: In the present study, we have synthesized Cr and Fe
doped zinc oxide (ZnO) nanostructures (Zn1-δCraFebO; where δ = a +
b = 20%, a = 5, 6, 8 & 10% and b = 15, 14, 12 & 10%) via sol-gel
method at different doping concentrations. The synthesized samples
were characterized for structural properties by X-ray diffractrometer
and field emission scanning electron microscope and the optical
properties were carried out through photoluminescence and UVvisible
spectroscopy. The particle size calculated through field
emission scanning electron microscope varies from 41 to 96 nm for
the samples synthesized at different doping concentrations. The
optical band gaps calculated through UV-visible spectroscopy are
found to be decreasing from 3.27 to 3.02 eV as the doping
concentration of Cr increases and Fe decreases.
Abstract: In this study, we developed a complementary electrochromic device consisting of WO3 and NiO films fabricated by rf-magnetron sputtered. The electrochromic properties of WO3 and NiO films were investigated using cyclic voltammograms (CV), performed on WO3 and NiO films immersed in an electrolyte of 1 M LiClO4 in propylene carbonate (PC). Optical and electrochemical of the films, as a function of coloration–bleaching cycle, were characterized using an UV-Vis-NIR spectrophotometer and cyclic voltammetry (CV). After investigating the properties of WO3 film, NiO film, and complementary electrochromic devices, we concluded that this device provides good reversibility, low power consumption of -2.5 V in color state, high variation of transmittance of 58.96%, changes in optical density of 0.81 and good memory effect under open-circuit conditions. In addition, electrochromic component penetration rate can be retained below 20% within 24h, showing preferred memory features; however, component coloring and bleaching response time are about 33s.
Abstract: In this study, we investigated (In,Ga,Zn)Ox (IGZO) thin films and examined their characteristics of using Ga2O3-2 ZnO (GZO) co-sputtered In2O3 prepared by dual target radio frequency magnetron sputtering at room temperature in a pure Ar atmosphere. RF powers of 80 W and 70 W were used for GZO and pure In2O3, room temperature (RT) was used as deposition temperature, and the deposition time was changed from 15 min to 60 min. Structural, surface, electrical, and optical properties of IGZO thin films were investigated as a function of deposition time. Furthermore, the GZO co-sputtered In2O3 thin films showed a very smooth and featureless surface and an amorphous structure regardless of the deposition time due to the room temperature sputtering process. We would show that the co-sputtered IGZO thin films exhibited transparent electrode properties with high transmittance ratio and low resistivity.
Abstract: The research work covered in this study includes the morphological structure and optical properties of TiO2-coated silk fibroin (SF) filters at 2.5% wt. TiO2/vol. PVA solution. SEM micrographs revealed the fibrous morphology of the TiO2-coated SF filters. An average diameter of the SF fiber was estimated to be approximately 10µm. Also, it was confirmed that TiO2 can be adhered more on SF filter surface at higher TiO2 dosages. The activity of semiconductor materials was studied by UV-VIS spectrophotometer method. The spectral data recorded shows the strong cut off at 390 nm. The calculated band-gap energy was about 3.19 eV. The photocatalytic activity of the filter was tested for gaseous formaldehyde removal in a modeling room with the total volume of 2.66 m3. The highest removal efficiency (54.72 ± 1.75%) was obtained at the initial formaldehyde concentration of about 5.00 ± 0.50ppm.
Abstract: The effect of the modification of ZnO powders by ZrO2, Al2O3, TiO2, SiO2, CeO2 and Y2O3 nanoparticles with a concentration of 1-30 wt % is investigated by diffuse reflectance spectra within the wavelength range 200 to 2500 nm before and after 100 keV proton and electron irradiation. It has been established that the introduction of nanoparticles ZrO2, Al2O3 enhances the optical stability of the pigments under proton irradiation, but reduces it under electron irradiation. Modifying with TiO2, SiO2, CeO2, Y2O3 nanopowders leads to decrease radiation stability in both types of irradiation. Samples modified by 5 wt. % of ZrO2 nanoparticles have the highest stability of optical properties after proton exposure. The degradation of optical properties under electron irradiation is not high for this concentration of nanoparticles. A decrease in the absorption of pigments modified with nanoparticles proton exposure is determined by a decrease in the intensity of bands located in the UV and visible regions. After electron exposure the absorption bands have in the whole spectrum range.
Abstract: Characteristics of MSM photodetector based on a porous In0.08Ga0.92N thin film were reported. Nanoporous structures of n-type In0.08Ga0.92N/AlN/Si thin films were synthesized by photoelectrochemical (PEC) etching at a ratio of 1:4 of HF:C2H5OH solution for 15min. The structural and optical properties of pre- and post-etched thin films were investigated. Field emission scanning electron microscope and atomic force microscope images showed that the pre-etched thin film has a sufficiently smooth surface over a large region and the roughness increased for porous film. Blue shift has been observed in photoluminescence emission peak at 300 K for porous sample. The photoluminescence intensity of the porous film indicated that the optical properties have been enhanced. A high work function metals (Pt and Ni) were deposited as a metal contact on the porous films. The rise and recovery times of the devices were investigated at 390nm chopped light. Finally, the sensitivity and quantum efficiency were also studied.
Abstract: This article reports on the studies of porous GaN prepared by ultra-violet (UV) assisted electrochemical etching in a solution of 4:1:1 HF: CH3OH:H2O2 under illumination of an UV lamp with 500 W power for 10, 25 and 35 minutes. The optical properties of porous GaN sample were compared to the corresponding as grown GaN. Porosity induced photoluminescence (PL) intensity enhancement was found in these samples. The resulting porous GaN displays blue shifted PL spectra compared to the as-grown GaN. Appearance of the blue shifted emission is correlated with the development of highly anisotropic structures in the morphology. An estimate of the size of the GaN nanostructure can be obtained with the help of a quantized state effective mass theory.
Abstract: TiO2/Ag composite films were prepared by
incorporating Ag in the pores of mesoporous TiO2 films using a
photoreduction method. The Ag nanoparticle sizes were in a range of
3.66-38.56 nm. The TiO2/Ag composite films were characterized by
X-ray diffraction (XRD), scanning electron microscopy (SEM) and
transmission electron microscropy (TEM). The TiO2 films and
TiO2/Ag composite films were immersed in a 0.3 mM N719 dye
solution and characterized by UV-Vis spectrophotometer. The
TiO2/Ag/N719 composite film showed that an optimal size of Ag
nanoparticles was 19.12 nm and, hence, gave the maximum optical
absorption spectra. The improved absorption was due to surface
plasmon resonance induced by the Ag nanoparticles to enhance the
absorption coefficient of the dye.
Abstract: We investigated a modified thermal evaporation
method in the growth process of ZnO nanowires. ZnO nanowires
were fabricated on p-type silicon substrates without using a metal
catalyst. A simple horizontal double-tube system along with
chemical vapor diffusion of the precursor was used to grow the ZnO
nanowires. The substrates were placed in different temperature
zones, and ZnO nanowires with different diameters were obtained for
the different substrate temperatures. In addition to the nanowires,
ZnO microdiscs with different diameters were obtained on another
substrate, which was placed at a lower temperature than the other
substrates. The optical properties and crystalline quality of the ZnO
nanowires and microdiscs were characterized by room temperature
photoluminescence (PL) and Raman spectrometers. The PL and
Raman studies demonstrated that the ZnO nanowires and microdiscs
grown using such set-up had good crystallinity with excellent optical
properties. Rectifying behavior of ZnO/Si heterostructures was
characterized by a simple DC circuit.
Abstract: Indium-tin oxide films are deposited by low plasma
temperature RF sputtering on highly flexible modification of glycol
polyethyleneterephtalate substrates. The produced layers are
characterized with transparency over 82 % and sheet resistance of
86.9 Ω/square. The film’s conductivity was further improved by
additional UV illumination from light source (365 nm), having power
of 250 W. The influence of the UV exposure dose on the structural
and electro-optical properties of ITO was investigated. It was
established that the optimum time of illumination is 10 minutes and
further UV treatment leads to polymer substrates degradation.
Structural and bonds type analysis show that at longer treatment
carbon atoms release and diffuse into ITO films, which worsen their
electrical behavior. For the optimum UV dose the minimum sheet
resistance was measured to be 19.2 Ω/square, and the maximum
transparency remained almost unchanged – above 82 %.
Abstract: Noble metal participation in nanostructured
semiconductor catalysts has drawn much interest because of their
improved properties. Recently, it has been discussed by many
researchers that Ag participation in TiO2, CuO, ZnO semiconductors
showed improved photocatalytic and optical properties. In this
research, Ag/ZnO nanocomposite particles were prepared by
Ultrasonic Spray Pyrolysis(USP) Method. 0.1M silver and zinc
nitrate aqueous solutions were used as precursor solutions. The
Ag:Zn atomic ratio of the solution was selected 1:1. Experiments
were taken place under constant air flow of 400 mL/min at 800°C
furnace temperature. Particles were characterized by X-Ray
Diffraction (XRD), Scanning Electron Microscope (SEM) and
Energy Dispersive Spectroscopy (EDS). The crystallite sizes of Ag
and ZnO in composite particles are 24.6 nm, 19.7 nm respectively.
Although, spherical nanocomposite particles are in a range of 300-
800 nm, these particles are formed by the aggregation of primary
particles which are in a range of 20-60 nm.
Abstract: Efficient luminescence is reported for the first time in Eu2+ activated double Chlorides A2BCl4 (A=Alkali metal, B=Alkaline earth element). A simple wet-chemical preparation is described. Emission intensities are comparable to that of the commercial phosphor. Excitation covers near UV region. These phosphors may be useful for applications like solid state lighting, scintillation detectors and X-ray storage using photo-stimulable phosphors.
Abstract: Antimicrobial (AM) starch-based films were
developed by incorporating chitosan and lauric acid as antimicrobial
agent into starch-based film. Chitosan has wide range of applications
as a biomaterial, but barriers still exist to its broader use due to its
physical and chemical limitations. In this work, a series of
starch/chitosan (SC) blend films containing 8% of lauric acid was
prepared by casting method. The structure of the film was
characterized by Fourier transform infrared spectroscopy (FTIR), Xray
diffraction (XRD), and scanning electron microscopy (SEM).
The results indicated that there were strong interactions were present
between the hydroxyl groups of starch and the amino groups of
chitosan resulting in a good miscibility between starch and chitosan
in the blend films. Physical properties and optical properties of the
AM starch-based film were evaluated. The AM starch-based films
incorporated with chitosan and lauric acid showed an improvement in
water vapour transmission rate (WVTR) and addition of starch
content provided more transparent films while the yellowness of the
film attributed to the higher chitosan content. The improvement in
water barrier properties was mainly attributed to the hydrophobicity
of lauric acid and optimum chitosan or starch content. AM starch
based film also showed excellent oxygen barrier. Obtaining films
with good oxygen permeability would be an indication of the
potential use of these antimicrobial packaging as a natural packaging
and an alternative packaging to the synthetic polymer to protect food
from oxidation reactions
Abstract: Photoplethysmography is a simple measurement of the
variation in blood volume in tissue. It detects the pulse signal of heart
beat as well as the low frequency signal of vasoconstriction and
vasodilation. The transmission type measurement is limited to only a
few specific positions for example the index finger that have a short
path length for light. The reflectance type measurement can be
conveniently applied on most parts of the body surface. This study
analyzed the factors that determine the quality of reflectance
photoplethysmograph signal including the emitter-detector distance,
wavelength, light intensity, and optical properties of skin tissue.
Light emitting diodes (LEDs) with four different visible
wavelengths were used as the light emitters. A phototransistor was
used as the light detector. A micro translation stage adjusts the
emitter-detector distance from 2 mm to 15 mm.
The reflective photoplethysmograph signals were measured on
different sites. The optimal emitter-detector distance was chosen to
have a large dynamic range for low frequency drifting without signal
saturation and a high perfusion index. Among these four wavelengths,
a yellowish green (571nm) light with a proper emitter-detection
distance of 2mm is the most suitable for obtaining a steady and reliable
reflectance photoplethysmograph signal
Abstract: Quaternary InxAlyGa1-x-yN semiconductors have
attracted much research interest because the use of this quaternary
offer the great flexibility in tailoring their band gap profile while
maintaining their lattice-matching and structural integrity. The
structural and optical properties of InxAlyGa1-x-yN alloys grown by
molecular beam epitaxy (MBE) is presented. The structural quality of
InxAlyGa1-x-yN layers was characterized using high-resolution X-ray
diffraction (HRXRD). The results confirm that the InxAlyGa1-x-yN
films had wurtzite structure and without phase separation. As the In
composition increases, the Bragg angle of the (0002) InxAlyGa1-x-yN
peak gradually decreases, indicating the increase in the lattice constant
c of the alloys. FWHM of (0002) InxAlyGa1-x-yN decreases with
increasing In composition from 0 to 0.04, that could indicate the
decrease of quality of the samples due to point defects leading to
non-uniformity of the epilayers. UV-VIS spectroscopy have been used
to study the energy band gap of InxAlyGa1-x-yN. As the indium (In)
compositions increases, the energy band gap decreases. However, for
InxAlyGa1-x-yN with In composition of 0.1, the band gap shows a
sudden increase in energy. This is probably due to local alloy
compositional fluctuations in the epilayer. The bowing parameter
which appears also to be very sensitive on In content is investigated
and obtained b = 50.08 for quaternary InxAlyGa1-x-yN alloys. From
photoluminescence (PL) measurement, green luminescence (GL)
appears at PL spectrum of InxAlyGa1-x-yN, emitted for all x at ~530 nm
and it become more pronounced as the In composition (x) increased,
which is believed cause by gallium vacancies and related to isolated
native defects.
Abstract: Optical properties of sputter-deposited ZnS thin films
were investigated as potential replacements for CBD(chemical bath
deposition) CdS buffer layers in the application of CIGS solar cells.
ZnS thin films were fabricated on glass substrates at RT, 150oC, 200oC,
and 250oC with 50 sccm Ar gas using an RF magnetron sputtering
system. The crystal structure of the thin film is found to be zinc blende
(cubic) structure. Lattice parameter of ZnS is slightly larger than CdS
on the plane and thus better matched with that of CIGS. Within a
400-800 nm wavelength region, the average transmittance was larger
than 75%. When the deposition temperature of the thin film was
increased, the blue shift phenomenon was enhanced. Band gap energy
of the ZnS thin film tended to increase as the deposition temperature
increased. ZnS thin film is a promising material system for the CIGS
buffer layer, in terms of ease of processing, low cost, environmental
friendliness, higher transparency, and electrical properties