Abstract: In this study, we investigated (In,Ga,Zn)Ox (IGZO) thin films and examined their characteristics of using Ga2O3-2 ZnO (GZO) co-sputtered In2O3 prepared by dual target radio frequency magnetron sputtering at room temperature in a pure Ar atmosphere. RF powers of 80 W and 70 W were used for GZO and pure In2O3, room temperature (RT) was used as deposition temperature, and the deposition time was changed from 15 min to 60 min. Structural, surface, electrical, and optical properties of IGZO thin films were investigated as a function of deposition time. Furthermore, the GZO co-sputtered In2O3 thin films showed a very smooth and featureless surface and an amorphous structure regardless of the deposition time due to the room temperature sputtering process. We would show that the co-sputtered IGZO thin films exhibited transparent electrode properties with high transmittance ratio and low resistivity.
Abstract: We have fabricated a-IGZO TFT and investigated the
stability under positive DC and AC bias stress. The threshold voltage
of a-IGZO TFT shifts positively under those biases, and that reduces
on-current. For this reason, conventional shift-register circuit
employing TFTs which stressed by positive bias will be unstable, may
do not work properly. We have designed a new 6-transistor
shift-register, which has less transistors than prior circuits. The TFTs
of the proposed shift-register are not suffering from positive DC or AC
stress, mainly kept unbiased. Despite the compact design, the stable
output signal was verified through the SPICE simulation even under
RC delay of clock signal.