Abstract: The hydrogenated amorphous carbon films (α-C:H)
were deposited on p-type Si (100) substrates at different thicknesses by
radio frequency plasma enhanced chemical vapor deposition
technique (rf-PECVD). Raman spectra display asymmetric
diamond-like carbon (DLC) peaks, representative of the α-C:H films.
The decrease of intensity ID/IG ratios revealed the sp3 content arise at
different thicknesses of the α-C:H films. In terms of mechanical
properties, the high hardness and elastic modulus values showed the
elastic and plastic deformation behaviors related to sp3 content in
amorphous carbon films. Electrochemical properties showed that the
α-C:H films exhibited excellent corrosion resistance in air-saturated
3.5 wt.% NaCl solution for pH 2 at room temperature. Thickness
increasing affected the small sp2 clusters in matrix, restricting the
velocity transfer and exchange of electrons. The deposited α-C:H films
exhibited excellent mechanical properties and corrosion resistance.
Abstract: Hydrogenated amorphous carbon (a-C:H) films have
been synthesized by a radio frequency plasma enhanced chemical
vapor deposition (rf-PECVD) technique with different bias voltage
from 0.0 to -0.5 kV. The Raman spectra displayed the polymer-like
hydrogenated amorphous carbon (PLCH) film with 0.0 to -0.1 and
a-C:H films with -0.2 to -0.5 kV of bias voltages. The surface chemical
information of all films were studied by X-ray photoelectron
spectroscopy (XPS) technique, presented to C-C (sp2 and sp3) and C-O
bonds, and relative carbon (C) and oxygen (O) atomics contents. The
O contamination had affected on structure and optical properties. The
true density of PLCH and a-C:H films were characterized by X-ray
refractivity (XRR) method, showed the result as in the range of
1.16-1.73 g/cm3 that depending on an increasing of bias voltage. The
hardness was proportional to the true density of films. In addition, the
optical properties i.e. refractive index (n) and extinction coefficient (k)
of these films were determined by a spectroscopic ellipsometry (SE)
method that give formation to in 1.62-2.10 (n) and 0.04-0.15 (k)
respectively. These results indicated that the optical properties
confirmed the Raman results as presenting the structure changed with
applied bias voltage increased.