Abstract: In this paper, an experimental and theoretical study of the processes of mesoporous silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-band-gap semiconductors is performed. Experimental samples were obtained by the method of chemical vapor deposition and investigated by scanning electron microscopy. Analytic expressions were obtained for the effective diffusion factor and carbon atoms diffusion length in a porous system. The proposed model takes into account the processes of Knudsen diffusion, coagulation and overgrowing of pores during the formation of a silicon carbide layer.
Abstract: This article reports on the studies of porous GaN prepared by ultra-violet (UV) assisted electrochemical etching in a solution of 4:1:1 HF: CH3OH:H2O2 under illumination of an UV lamp with 500 W power for 10, 25 and 35 minutes. The optical properties of porous GaN sample were compared to the corresponding as grown GaN. Porosity induced photoluminescence (PL) intensity enhancement was found in these samples. The resulting porous GaN displays blue shifted PL spectra compared to the as-grown GaN. Appearance of the blue shifted emission is correlated with the development of highly anisotropic structures in the morphology. An estimate of the size of the GaN nanostructure can be obtained with the help of a quantized state effective mass theory.
Abstract: The electrolyte stirring method of anodization etching
process for manufacturing porous silicon (PS) is reported in this work.
Two experimental setups of nature air stirring (PS-ASM) and
electrolyte stirring (PS-ESM) are employed to clarify the influence of
stirring mechanisms on electrochemical etching process. Compared to
traditional fabrication without any stirring apparatus (PS-TM), a large
plateau region of PS surface structure is obtained from samples with
both stirring methods by the 3D-profiler measurement. Moreover, the
light emission response is also improved by both proposed electrolyte
stirring methods due to the cycling force in electrolyte could
effectively enhance etch-carrier distribution while the electrochemical
etching process is made. According to the analysis of statistical
calculation of photoluminescence (PL) intensity, lower standard
deviations are obtained from PS-samples with studied stirring methods,
i.e. the uniformity of PL-intensity is effectively improved. The
calculated deviations of PL-intensity are 93.2, 74.5 and 64,
respectively, for PS-TM, PS-ASM and PS-ESM.