The Hall Coefficient and Magnetoresistance in Rectangular Quantum Wires with Infinitely High Potential under the Influence of a Laser Radiation

The Hall Coefficient (HC) and the Magnetoresistance (MR) have been studied in two-dimensional systems. The HC and the MR in Rectangular Quantum Wire (RQW) subjected to a crossed DC electric field and magnetic field in the presence of a Strong Electromagnetic Wave (EMW) characterized by electric field are studied in this work. Using the quantum kinetic equation for electrons interacting with optical phonons, we obtain the analytic expressions for the HC and the MR with a dependence on magnetic field, EMW frequency, temperatures of systems and the length characteristic parameters of RQW. These expressions are different from those obtained for bulk semiconductors and cylindrical quantum wires. The analytical results are applied to GaAs/GaAs/Al. For this material, MR depends on the ratio of the EMW frequency to the cyclotron frequency. Indeed, MR reaches a minimum at the ratio 5/4, and when this ratio increases, it tends towards a saturation value. The HC can take negative or positive values. Each curve has one maximum and one minimum. When magnetic field increases, the HC is negative, achieves a minimum value and then increases suddenly to a maximum with a positive value. This phenomenon differs from the one observed in cylindrical quantum wire, which does not have maximum and minimum values.

A Modelling Study of the Photochemical and Particulate Pollution Characteristics above a Typical Southeast Mediterranean Urban Area

The Greater Athens Area (GAA) faces photochemical and particulate pollution episodes as a result of the combined effects of local pollutant emissions, regional pollution transport, synoptic circulation and topographic characteristics. The area has undergone significant changes since the Athens 2004 Olympic Games because of large scale infrastructure works that lead to the shift of population to areas previously characterized as rural, the increase of the traffic fleet and the operation of highways. However, few recent modelling studies have been performed due to the lack of an accurate, updated emission inventory. The photochemical modelling system MM5/CAMx was applied in order to study the photochemical and particulate pollution characteristics above the GAA for two distinct ten-day periods in the summer of 2006 and 2010, where air pollution episodes occurred. A new updated emission inventory was used based on official data. Comparison of modeled results with measurements revealed the importance and accuracy of the new Athens emission inventory as compared to previous modeling studies. The model managed to reproduce the local meteorological conditions, the daily ozone and particulates fluctuations at different locations across the GAA. Higher ozone levels were found at suburban and rural areas as well as over the sea at the south of the basin. Concerning PM10, high concentrations were computed at the city centre and the southeastern suburbs in agreement with measured data. Source apportionment analysis showed that different sources contribute to the ozone levels, the local sources (traffic, port activities) affecting its formation.

Characterization of InGaAsP/InP Quantum Well Lasers

Analytical formula for the optical gain based on a simple parabolic-band by introducing theoretical expressions for the quantized energy is presented. The model used in this treatment take into account the effects of intraband relaxation. It is shown, as a result, that the gain for the TE mode is larger than that for TM mode and the presence of acceptor impurity increase the peak gain.

Excitonic Refractive Index Change in High Purity GaAs Modulator at Room Temperature for Optical Fiber Communication Network

In this paper, we have compared and analyzed the electroabsorption properties between with and without excitonic effect bulk in high purity GaAs spatial light modulator for optical fiber communication network. The eletroabsorption properties such as absorption spectra, change in absorption spectra, change in refractive index and extinction ration has been calculated. We have also compared the result of absorption spectra and change in absorption spectra with the experimental results and found close agreement with experimental results.

Transient Analysis & Performance Estimation of Gate Inside Junctionless Transistor (GI-JLT)

In this paper, the transient device performance analysis of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been evaluated. 3-D Bohm Quantum Potential (BQP) transport device simulation has been used to evaluate the delay and power dissipation performance. GI-JLT has a number of desirable device parameters such as reduced propagation delay, dynamic power dissipation, power and delay product, intrinsic gate delay and energy delay product as compared to Gate-all-around transistors GAA-JLT. In addition to this, various other device performance parameters namely, on/off current ratio, short channel effects (SCE), transconductance Generation Factor (TGF) and unity gain cut-off frequency (fT ) and subthreshold slope (SS) of the GI-JLT and GAA-JLT have been analyzed and compared. GI-JLT shows better device performance characteristics than GAA-JLT for low power and high frequency applications, because of its larger gate electrostatic control on the device operation.

The Effect of Global Solar Variations on the Performance of n-AlGaAs/p-GaAs Solar Cells

This study investigates how AlGaAs/GaAs thin film solar cells perform under varying global solar spectrum due to the changes of environmental parameters such as the air mass and the atmospheric turbidity. The solar irradiance striking the solar cell is simulated using the spectral irradiance model SMARTS2 (Simple Model of the Atmospheric Radiative Transfer of Sunshine) for clear skies on the site of Setif (Algeria). The results show a reduction in the short circuit current due to increasing atmospheric turbidity, it is 63.09% under global radiation. However increasing air mass leads to a reduction in the short circuit current of 81.73%. The efficiency decreases with increasing atmospheric turbidity and air mass.

Powerful Laser Diode Matrixes for Active Vision Systems

This article is deal with the experimental investigations of the laser diode matrixes (LDM) based on the AlGaAs/GaAs heterostructures (lasing wavelength 790-880 nm) to find optimal LDM parameters for active vision systems. In particular, the dependence of LDM radiation pulse power on the pulse duration and LDA active layer heating as well as the LDM radiation divergence are discussed.

1/f Noise in Quantum-Size Heteronanostructures Based On GaAs and Alloys

The 1/f noise investigation in nanoscale light-emitting diodes and lasers, based on GaAs and alloys, is presented here. Leakage and additional (to recombination through quantum wells and/or dots) nonlinear currents were detected and it was shown that these currents are the main source of the 1/f noise in devices studied.

Spectral Broadening in an InGaAsP Optical Waveguide with χ(3) Nonlinearity Including Two Photon Absorption

We have studied a method to widen the spectrum of optical pulses that pass through an InGaAsP waveguide for application to broadband optical communication. In particular, we have investigated the competitive effect between spectral broadening arising from nonlinear refraction (optical Kerr effect) and shrinking due to two photon absorption in the InGaAsP waveguide with χ(3) nonlinearity. The shrunk spectrum recovers broadening by the enhancement effect of the nonlinear refractive index near the bandgap of InGaAsP with a bandgap wavelength of 1490 nm. The broadened spectral width at around 1525 nm (196.7 THz) becomes 10.7 times wider than that at around 1560 nm (192.3 THz) without the enhancement effect, where amplified optical pulses with a pulse width of ∼ 2 ps and a peak power of 10 W propagate through a 1-cm-long InGaAsP waveguide with a cross-section of 4 (μm)2.

Identification of Micromechanical Fracture Model for Predicting Fracture Performance of Steel Wires for Civil Engineering Applications

The fracture performance of steel wires for civil engineering applications remains a major concern in civil engineering construction and maintenance of wire reinforced structures. The need to employ approaches that simulate micromechanical material processes which characterizes fracture in civil structures has been emphasized recently in the literature. However, choosing from the numerous micromechanics-based fracture models, and identifying their applicability and reliability remains an issue that still needs to be addressed in a greater depth. Laboratory tensile testing and finite element tensile testing simulations with the shear, ductile and Gurson-Tvergaard-Needleman’s micromechanics-based models conducted in this work reveal that the shear fracture model is an appropriate fracture model to predict the fracture performance of steel wires used for civil engineering applications. The need to consider the capability of the micromechanics-based fracture model to predict the “cup and cone” fracture exhibited by the wire in choosing the appropriate fracture model is demonstrated.

Solar Cell Degradation by Electron Irradiation Effect of Irradiation Fluence

Solar cells used in orbit are exposed to radiation environment mainly protons and high energy electrons. These particles degrade the output parameters of the solar cell. The aim of this work is to characterize the effects of electron irradiation fluence on the J (V) characteristic and output parameters of GaAs solar cell by numerical simulation. The results obtained demonstrate that the electron irradiation-induced degradation of performances of the cells concerns mainly the short circuit current

Study of a Fabry-Perot Resonator

A laser is essentially an optical oscillator consisting of a resonant cavity, an amplifying medium and a pumping source. In semiconductor diode lasers, the cavity is created by the boundary between the cleaved face of the semiconductor crystal and air, and has reflective properties as a result of the differing refractive indices of the two media. For a GaAs-air interface a reflectance of 0.3 is typical and therefore the length of the semiconductor junction forms the resonant cavity. To prevent light being emitted in unwanted directions from the junction, sides perpendicular to the required direction are roughened. The objective of this work is to simulate the optical resonator Fabry-Perot and explore its main characteristics, such as FSR, finesse, linewidth, transmission and so on, that describe the performance of resonator.

Effect of Field Dielectric Material on Performance of InGaAs Power LDMOSFET

In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch.

Numerical Calculation of the Ionization Energy of Donors in a Cubic Quantum well and Wire

The ionization energy in semiconductor systems in nano scale was investigated by using effective mass approximation. By introducing the Hamiltonian of the system, the variational technique was employed to calculate the ground state and the ionization energy of a donor at the center and in the case that the impurities are randomly distributed inside a cubic quantum well. The numerical results for GaAs/GaAlAs show that the ionization energy strongly depends on the well width for both cases and it decreases as the well width increases. The ionization energy of a quantum wire was also calculated and compared with the results for the well.

Accounting Research from the Globalization Perspective

This paper explores the idea of globalisation and considers accounting-s role in that process in order to develop new spaces for accounting research. That-s why in this paper we are looking for questions not necessary for answers. Adopting an 'alternative' view of accounting it-s related to the fact that we sees accounting as social and evolutionist process, that pays heed to those voices arguing for greater social and environmental justice, and that draws attention to the role of accounting researchers in the process of globalisation. The paper defines globalisation and expands the globalisation and accounting research agenda introducing in this context the harmonization process in accounting. There are the two main systems which are disputing the first stage of being the benchmark: GAAP and IFRS. Each of them has his pluses and minuses on being the selected one. Due to this fact a convergence of the two, joining the advantages and disadvantages of the two should be the solution for an unique international accounting solution. Is this idea realizable, what steps has been made until now, what should be done in the future. The paper is emphasising the role of the cultural differences in the process of imposing of an unique international accounting system by the global organizations..

Perspectives of Financial Reporting Harmonization

In the current context of globalization, accountability has become a key subject of real interest for both, national and international business areas, due to the need for comparability and transparency of the economic situation, so we can speak about the harmonization and convergence of international accounting. The paper presents a qualitative research through content analysis of several reports concerning the roadmap for convergence. First, we develop a conceptual framework for the evolution of standards’ convergence and further we discuss the degree of standards harmonization and convergence between US GAAP and IAS/IFRS as to October 2012. We find that most topics did not follow the expected progress. Furthermore there are still some differences in the long-term project that are in process to be completed and other that were reassessed as a lower priority project.

The Incorporation of In in GaAsN as a Means of N Fraction Calibration

InGaAsN and GaAsN epitaxial layers with similar nitrogen compositions in a sample were successfully grown on a GaAs (001) substrate by solid source molecular beam epitaxy. An electron cyclotron resonance nitrogen plasma source has been used to generate atomic nitrogen during the growth of the nitride layers. The indium composition changed from sample to sample to give compressive and tensile strained InGaAsN layers. Layer characteristics have been assessed by high-resolution x-ray diffraction to determine the relationship between the lattice constant of the GaAs1-yNy layer and the fraction x of In. The objective was to determine the In fraction x in an InxGa1-xAs1-yNy epitaxial layer which exactly cancels the strain present in a GaAs1-yNy epitaxial layer with the same nitrogen content when grown on a GaAs substrate.

Some Biochemical Changes Followed Experimental Gastric Ulceration

Gastric ulceration is a discontinuity in gastric mucosa, usually occurs due to imbalance between the gastric mucosal protective factors, that is called gastric mucosal barrier, and the aggressive factors, to which the mucosa is exposed. This study was carried out on sixty male Sprague-Dowely rats (12- 16 weeks old) allocated into two groups. The first control group and the second Gastric lesion group which induced by oral administration of a single daily dose of aspirin at a dose of 300 mg/kg body weight for 7 consecutive-days (6% aspirin solution will be prepared and each rat will be given 5 ml of that solution/kg body weight). Blood is collected 1, 2 and 3 weeks after induction of gastric ulceration. Significant increase in serum copper, nitric oxide, and prostaglandin E2 all over the period of experiment. Significant decrease in erythrocyte superoxide dismutase (t-SOD) activities, serum (calcium, phosphorus, glucose and insulin) levels. Non-significant changes in serum sodium and potassium levels are obtained.

The Necessity of Optimized Management on Surface Water Sources of Zayanderood Basin

One of the efficient factors in comprehensive development of an area is to provide water sources and on the other hand the appropriate management of them. Population growth and nourishment security for such a population necessitate the achievement of constant development besides the reforming of traditional management in order to increase the profit of sources; In this case, the constant exploitation of sources for the next generations will be considered in this program. The achievement of this development without the consideration and possibility of water development will be too difficult. Zayanderood basin with 41500 areas in square kilometers contains 7 sub-basins and 20 units of hydrologic. In this basin area, from the entire environment descending, just a small part will enter into the river currents and the rest will be out of efficient usage by various ways. The most important surface current of this basin is Zayanderood River with 403 kilometers length which is originated from east slopes of Zagros mount and after draining of this basin area it will enter into Gaavkhooni pond. The existence of various sources and consumptions of water in Zayanderood basin, water transfer of the other basin areas into this basin, of course the contradiction between the upper and lower beneficiaries, the existence of worthwhile natural ecosystems such as Gaavkhooni swamp in this basin area and finally, the drought condition and lack of water in this area all necessitate the existence of comprehensive management of water sources in this central basin area of Iran as this method is a kind of management which considers the development and the management of water sources as an equilibrant way to increase the economical and social benefits. In this study, it is tried to survey the network of surface water sources of basin in upper and lower sections; at the most, according to the difficulties and deficiencies of an efficient management of water sources in this basin area, besides the difficulties of water draining and the destructive phenomenon of flood-water, the appropriate guidelines according to the region conditions are presented in order to prevent the deviation of water in upper sections and development of regions in lower sections of Zayanderood dam.

Integration of Resistive Switching Memory Cell with Vertical Nanowire Transistor

We integrate TiN/Ni/HfO2/Si RRAM cell with a vertical gate-all-around (GAA) nanowire transistor to achieve compact 4F2 footprint in a 1T1R configuration. The tip of the Si nanowire (source of the transistor) serves as bottom electrode of the memory cell. Fabricated devices with nanowire diameter ~ 50nm demonstrate ultra-low current/power switching; unipolar switching with 10μA/30μW SET and 20μA/30μW RESET and bipolar switching with 20nA/85nW SET and 0.2nA/0.7nW RESET. Further, the switching current is found to scale with nanowire diameter making the architecture promising for future scaling.