Abstract: A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEMT) is presented. Both extrinsic and intrinsic circuit elements of a smallsignal model are determined using genetic algorithm (GA) as a stochastic global search and optimization tool. The parameters extraction of the small-signal model is performed on 200-μm gate width AlGaAs/InGaAs PHEMT. The equivalent circuit elements for a proposed 18 elements model are determined directly from the measured S- parameters. The GA is used to extract the parameters of the proposed small-signal model from 0.5 up to 18 GHz.
Abstract: The Norwegian Military Academy (Army) has been
using a tactical simulator for the last two years. During this time
there has been some discussion concerning how to use the simulator
most efficiently and what type of learning one achieves by using the
simulator. The problem that is addressed in this paper is how
simulators can be used as a learning resource for students concerned
with developing their military profession. The aim of this article is to
create a wider consciousness regarding the use of a simulator while
educating officers in a military profession. The article discusses the
use of simulators from two different perspectives. The first
perspective deals with using the simulator as a computer game, and
the second perspective looks at the simulator as a socio-cultural
artefact. Furthermore the article discusses four different ways the
simulator can be looked upon as a useful learning resource when
educating students of a military profession.
Abstract: This paper presents a new methodology to study power and energy consumption in mechatronic systems early in the development process. This new approach makes use of two modeling languages to represent and simulate embedded control software and electromechanical subsystems in the discrete event and continuous time domain respectively within a single co-model. This co-model enables an accurate representation of power and energy consumption and facilitates the analysis and development of both software and electro-mechanical subsystems in parallel. This makes the engineers aware of energy-wise implications of different design alternatives and enables early trade-off analysis from the beginning of the analysis and design activities.
Abstract: We have modeled the effect of a graded band gap
window on the performance of a single junction AlxGa1-xAs/GaAs
solar cell. First, we study the electrical characteristics of a single
junction AlxGa1-xAs/GaAs solar cell, by employing an optimized
structure for this solar cell, we show that grading the band gap of the
window can increase the conversion efficiency of the solar cell by
about 1.5%, and can also improve the quantum efficiency of the solar
cell especially at shorter wavelengths.
Abstract: Carrier mobility has become the most important
characteristic of high speed low dimensional devices. Due to
development of very fast switching semiconductor devices, speed of
computer and communication equipment has been increasing day by
day and will continue to do so in future. As the response of any
device depends on the carrier motion within the devices, extensive
studies of carrier mobility in the devices has been established
essential for the growth in the field of low dimensional devices.
Small-signal ac transport of degenerate two-dimensional hot
electrons in GaAs quantum wells is studied here incorporating
deformation potential acoustic, polar optic and ionized impurity
scattering in the framework of heated drifted Fermi-Dirac carrier
distribution. Delta doping is considered in the calculations to
investigate the effects of double delta doping on millimeter and submillimeter
wave response of two dimensional hot electrons in GaAs
nanostructures. The inclusion of delta doping is found to enhance
considerably the two dimensional electron density which in turn
improves the carrier mobility (both ac and dc) values in the GaAs
quantum wells thereby providing scope of getting higher speed
devices in future.
Abstract: ZnO nanostructures including nanowires, nanorods,
and nanoneedles were successfully deposited on GaAs substrates,
respectively, by simple two-step chemical method for the first time. A
ZnO seed layer was firstly pre-coated on the O2-plasma treated
substrate by sol-gel process, followed by the nucleation of ZnO
nanostructures through hydrothermal synthesis. Nanostructures with
different average diameter (15-250 nm), length (0.9-1.8 μm), density
(0.9-16×109 cm-2) were obtained via adjusting the growth time and
concentration of precursors. From the reflectivity spectra, we
concluded ordered and taper nanostructures were preferential for
photovoltaic applications. ZnO nanoneedles with an average diameter
of 106 nm, a moderate length of 2.4 μm, and the density of 7.2×109
cm-2 could be synthesized in the concentration of 0.04 M for 18 h.
Integrated with the nanoneedle array, the power conversion efficiency
of single junction solar cell was increased from 7.3 to 12.2%,
corresponding to a 67% improvement.
Abstract: In this paper, we present a vertical wire NMOS
device fabricated using CMOS compatible processes. The
impact of temperature on various device parameters is
investigated in view of usual increase in surrounding
temperature with device density.
Abstract: In the present simulation work, an attempt is made to study the switching dynamics of an optically controlled 4HSiC thyristor power semiconductor device with the use of GaAs optically triggered power transistor. The half-cell thyristor has the forward breakdown of 200 V and reverse breakdown of more than 1000 V. The optically controlled thyristor has a rise time of 0.14 μs and fall time of 0.065 μs. The turn-on and turn-off delays are 0.1 μs and 0.06 μs, respectively. In addition, this optically controlled thyristor is used as a control switch for the DC-DC Boost converter. The pn-diode used for the converter has the forward drop of 2.8 V and reverse breakdown of around 400 V.
Abstract: We investigated oxidative DNA damage caused by
radio frequency radiation using 8-oxo-7, 8-dihydro-2'-
deoxyguanosine (8-oxodG) generated in mice tissues after exposure
to 900 MHz mobile phone radio frequency in three independent
experiments. The RF was generated by a Global System for Mobile
Communication (GSM) signal generator. The radio frequency field
was adjusted to 25 V/m. The whole body specific absorption rate
(SAR) was 1.0 W/kg. Animals were exposed to this field for 30 min
daily for 30 days. 24 h post-exposure, blood serum, brain and spleen
were removed and DNA was isolated. Enzyme-linked
immunosorbent assay (ELISA) was used to measure 8-oxodG
concentration. All animals survived the whole experimental period.
The body weight of animals did not change significantly at the end of
the experiment. No statistically significant differences observed in
the levels of oxidative stress. Our results are not in favor of the
hypothesis that 900 MHz RF induces oxidative damage.
Abstract: This work is focused on the numerical prediction of the fracture resistance of a flat stiffened panel made of the aluminium alloy 2024 T3 under a monotonic traction condition. The performed numerical simulations have been based on the micromechanical Gurson-Tvergaard (GT) model for ductile damage. The applicability of the GT model to this kind of structural problems has been studied and assessed by comparing numerical results, obtained by using the WARP 3D finite element code, with experimental data available in literature. In the sequel a home-made procedure is presented, which aims to increase the residual strength of a cracked stiffened aluminum panel and which is based on the stochastic design improvement (SDI) technique; a whole application example is then given to illustrate the said technique.
Abstract: In the present work we investigate both the elastic and
electric properties of a chiral material. We consider a composite
structure made from a polymer matrix and anisotropic inclusions of
GaAs taking into account piezoelectric and dielectric properties of
the composite material. The principal task of the work is the
estimation of the functional properties of the composite material.
Abstract: In the present work we model a Multiquantum Well
structure Separate Absorption and Charge Multiplication Avalanche
Photodiode (MQW-SACM-APD), while the Absorption region
coincide with the MQW. We consider the nonuniformity of electric
field using split-step method in active region. This model is based on
the carrier rate equations in the different regions of the device. Using
the model we obtain the photocurrent, and dark current. As an
example, InGaAs/InP SACM-APD and MQW-SACM-APD are
simulated. There is a good agreement between the simulation and
experimental results.
Abstract: In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.
Abstract: Optical emission based on excitonic scattering processes becomes important in dense exciton systems in which the average distance between excitons is of the order of a few Bohr radii but still below the exciton screening threshold. The phenomena due to interactions among excited states play significant role in the emission near band edge of the material. The theory of two-exciton collisions for GaAs/AlGaAs quantum well systems is a mild attempt to understand the physics associated with the optical spectra due to excitonic scattering processes in these novel systems. The four typical processes considered give different spectral shape, peak position and temperature dependence of the emission spectra. We have used the theory of scattering together with the second order perturbation theory to derive the radiative power spontaneously emitted at an energy ħω by these processes. The results arrived at are purely qualitative in nature. The intensity of emitted light in quantum well systems varies inversely to the square of temperature, whereas in case of bulk materials it simply decreases with the temperature.
Abstract: Discharges in hydrogen, ignited by wire explosion, with current amplitude up to 1.5 MA were investigated. Channel diameter oscillations were observed on the photostreaks. Voltage and current curves correlated with the photostreaks. At initial gas pressure of 5-35 MPa the oscillation period was proportional to square root of atomic number of the initiating wire material. These oscillations were associated with aligned magnetic and gas-kinetic pressures. At initial pressure of 80-160 MPa acoustic pressure fluctuations on the discharge chamber wall were increased up to 150 MPa and there were the growth of voltage fluctuations on the discharge gap up to 3 kV simultaneously with it. In some experiments it was observed abrupt increase in the oscillation amplitude, which can be caused by the resonance of the acoustic oscillations in discharge chamber volume and the oscillations connected with alignment of the gaskinetic pressure and the magnetic pressure, as far as frequencies of these oscillations are close to each other in accordance with the estimates and the experimental data. Resonance of different type oscillations can produce energy density increasing in the discharge channel. Thus, the appropriate initial conditions in the experiment allow to increase the energy density in the discharge channel
Abstract: This paper reports on the theoretical performance
analysis of the 1.3 μm In0.42Ga0.58As /In0.26Ga0.74As multiple quantum
well (MQW) vertical cavity surface emitting laser (VCSEL) on the
ternary In0.31Ga0.69As substrate. The output power of 2.2 mW has
been obtained at room temperature for 7.5 mA injection current. The
material gain has been estimated to be ~3156 cm-1 at room
temperature with the injection carrier concentration of 2×1017 cm-3.
The modulation bandwidth of this laser is measured to be 9.34 GHz
at room temperature for the biasing current of 2 mA above the
threshold value. The outcomes reveal that the proposed InGaAsbased
MQW laser is the promising one for optical communication
system.
Abstract: It is not a secret that, IT management has become
more and more and integrated part of almost all organizations. IT
managers posses an enormous amount of knowledge within both
organizational knowledge and general IT knowledge. This article
investigates how IT managers keep themselves updated on IT
knowledge in general and looks into how much time IT managers
spend on weekly basis searching the net for new or problem solving
IT knowledge. The theory used in this paper is used to investigate the
current role of IT managers and what issues they are facing.
Furthermore a research is conducted where 7 IT managers in medium
sized and large Danish companies are interviewed to add further
focus on the role of the IT manager and to focus on how they keep
themselves updated. Beside finding substantial need for more
research, IT managers – generalists or specialists – only have limited
knowledge resources at hand in updating their own knowledge –
leaving much initiative to vendors.
Abstract: Present paper presents a parametric performancebased
design model for optimizing hospital design. The design model
operates with geometric input parameters defining the functional
requirements of the hospital and input parameters in terms of
performance objectives defining the design requirements and
preferences of the hospital with respect to performances. The design
model takes point of departure in the hospital functionalities as a set
of defined parameters and rules describing the design requirements
and preferences.
Abstract: The effect of varying holding temperature on hatching success, occurrence of deformities and mortality rates were investigated for goldlined seabream eggs. Wild broodstock (600 g) were stocked at a 2:1 male-female ratio in a 2 m3 fiberglass tank supplied with filtered seawater (37 g L-1 salinity, temp. range 24±0.5 oC [day] and 22±1 oC [night], DO2 in excess of 5.0mg L-1). Females were injected with 200 IU kg-1 HCG between 08.00 and 10.00 h and returned to tanks to spawn following which eggs were collected by hand using a 100μm net. Fertilized eggs at the gastrulation stage (120 L-1) were randomly placed into one of 12 experimental 6 L aerated (DO2 5 mg L-1) plastic containers with water temperatures maintained at 24±0.5 oC (ambient), 26±0.5 oC, 28± 0.5 oC and 30±0.5 oC using thermostats. Each treatment was undertaken in triplicate using a 12:12 photophase:scotophase photoperiod. No differences were recorded between eggs reared at 24 and 26 oC with respect to viability, deformity, mortality or unhatched egg rates. Increasing temperature reduced the number of viable eggs with those at 30 oC returning poorest performance (P < 0.05). Mortality levels were lowest for eggs incubated at 24 and 26 oC. The greatest level of deformities recorded was that for eggs reared at 28 oC.
Abstract: The integrity and issues related to electrostatic performance associated with scaling Si MOSFET bulk sub 10nm channel length promotes research in new device architectures such as SOI, double gate and GAA MOSFET. In this paper, we present some novel characteristic of horizontal rectangular gate\gate all around MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools. We will also exhibit some simulation results we obtained relating to the influence of some parameters variation on our structure, that having a direct impact on their threshold voltage and drain current. In addition, our TFET showed reasonable ION/IOFF ratio of (104) and low drain induced barrier lowering (DIBL) of 39 mV/V.