Abstract: In this work, we made anumerical study of the thermal and dynamic behavior of air in a horizontal channel with electronic components.The influenceto use baffles on the profiles of velocity and temperature is discussed.The finite volume method and the algorithm Simple are used for solving the equations of conservation of mass, momentum and energy.The results found show that baffles improve heat transfer between the cooling air and electronic components. The velocity will increase from 3 times per rapport of the initial velocity.
Abstract: The integrity and issues related to electrostatic performance associated with scaling Si MOSFET bulk sub 10nm channel length promotes research in new device architectures such as SOI, double gate and GAA MOSFET. In this paper, we present some novel characteristic of horizontal rectangular gate\gate all around MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools. We will also exhibit some simulation results we obtained relating to the influence of some parameters variation on our structure, that having a direct impact on their threshold voltage and drain current. In addition, our TFET showed reasonable ION/IOFF ratio of (104) and low drain induced barrier lowering (DIBL) of 39 mV/V.