Abstract: Characteristics of MSM photodetector based on a porous In0.08Ga0.92N thin film were reported. Nanoporous structures of n-type In0.08Ga0.92N/AlN/Si thin films were synthesized by photoelectrochemical (PEC) etching at a ratio of 1:4 of HF:C2H5OH solution for 15min. The structural and optical properties of pre- and post-etched thin films were investigated. Field emission scanning electron microscope and atomic force microscope images showed that the pre-etched thin film has a sufficiently smooth surface over a large region and the roughness increased for porous film. Blue shift has been observed in photoluminescence emission peak at 300 K for porous sample. The photoluminescence intensity of the porous film indicated that the optical properties have been enhanced. A high work function metals (Pt and Ni) were deposited as a metal contact on the porous films. The rise and recovery times of the devices were investigated at 390nm chopped light. Finally, the sensitivity and quantum efficiency were also studied.
Abstract: We have modeled the effect of a graded band gap
window on the performance of a single junction AlxGa1-xAs/GaAs
solar cell. First, we study the electrical characteristics of a single
junction AlxGa1-xAs/GaAs solar cell, by employing an optimized
structure for this solar cell, we show that grading the band gap of the
window can increase the conversion efficiency of the solar cell by
about 1.5%, and can also improve the quantum efficiency of the solar
cell especially at shorter wavelengths.