Abstract: This paper presents the design parameters for a thin film 3J InGaP/GaAs/Ge solar cell with a simulated maximum efficiency of 32.11% using Tcad Silvaco. Design parameters include the doping concentration, molar fraction, layers’ thickness and tunnel junction characteristics. An initial dual junction InGaP/GaAs model of a previous published heterojunction cell was simulated in Tcad Silvaco to accurately predict solar cell performance. To improve the solar cell’s performance, we have fixed meshing, material properties, models and numerical methods. However, thickness and layer doping concentration were taken as variables. We, first simulate the InGaP\GaAs dual junction cell by changing the doping concentrations and thicknesses which showed an increase in efficiency. Next, a triple junction InGaP/GaAs/Ge cell was modeled by adding a Ge layer to the previous dual junction InGaP/GaAs model with an InGaP /GaAs tunnel junction.
Abstract: This study investigates how AlGaAs/GaAs thin film
solar cells perform under varying global solar spectrum due to the
changes of environmental parameters such as the air mass and the
atmospheric turbidity. The solar irradiance striking the solar cell is
simulated using the spectral irradiance model SMARTS2 (Simple
Model of the Atmospheric Radiative Transfer of Sunshine) for clear
skies on the site of Setif (Algeria). The results show a reduction in the
short circuit current due to increasing atmospheric turbidity, it is
63.09% under global radiation. However increasing air mass leads to
a reduction in the short circuit current of 81.73%. The efficiency
decreases with increasing atmospheric turbidity and air mass.
Abstract: Solar cells used in orbit are exposed to radiation environment mainly protons and high energy electrons. These particles degrade the output parameters of the solar cell. The aim of this work is to characterize the effects of electron irradiation fluence on the J (V) characteristic and output parameters of GaAs solar cell by numerical simulation. The results obtained demonstrate that the electron irradiation-induced degradation of performances of the cells concerns mainly the short circuit current
Abstract: We have modeled the effect of a graded band gap
window on the performance of a single junction AlxGa1-xAs/GaAs
solar cell. First, we study the electrical characteristics of a single
junction AlxGa1-xAs/GaAs solar cell, by employing an optimized
structure for this solar cell, we show that grading the band gap of the
window can increase the conversion efficiency of the solar cell by
about 1.5%, and can also improve the quantum efficiency of the solar
cell especially at shorter wavelengths.