Abstract: Amongst many water purification techniques, TiO2 photocatalysis is recognized as one of the most promising sustainable methods. It is known that for photocatalytical applications anatase is the most suitable TiO2 phase, however heterojunction of anatase/rutile phases could improve the photocatalytical activity of TiO2 even further. Despite the relative simplicity of TiO2 different synthesis methods lead to the highly dispersed crystal phases and photocatalytic activity of the corresponding samples. Accordingly, suggestions and investigations of various innovative methods of TiO2 synthesis are still needed. In this work structural and photocatalytical properties of TiO2 films deposited by the unconventional method of simultaneous co-sputtering from two magnetrons powered by pulsed-Direct Current (pDC) and Radio Frequency (RF) power sources with negative bias voltage have been studied. More specifically, TiO2 film thickness, microstructure, surface roughness, crystal structure, optical transmittance and photocatalytical properties were investigated by profilometer, scanning electron microscope, atomic force microscope, X-ray diffractometer and UV-Vis spectrophotometer respectively. The proposed unconventional two magnetron co-sputtering based TiO2 film formation method showed very promising results for crystalline TiO2 film formation while keeping process temperatures below 100 °C. XRD analysis revealed that by using proper combination of power source type and bias voltage various TiO2 phases (amorphous, anatase, rutile or their mixture) can be synthesized selectively. Moreover, strong dependency between power source type and surface roughness, as well as between the bias voltage and band gap value of TiO2 films was observed. Interestingly, TiO2 films deposited by two magnetron co-sputtering without bias voltage had one of the highest band gap values between the investigated films but its photocatalytic activity was superior compared to all other samples. It is suggested that this is due to the dominating nanocrystalline anatase phase with various exposed surfaces including photocatalytically the most active {001}.
Abstract: Zinc sulphide (ZnS) quantum dots (QDs) were synthesized successfully via simple sonochemical method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) analysis revealed the average size of QDs of the order of 3.7 nm. The band gap of the QDs was tuned to 5.2 eV by optimizing the synthesis parameters. UV-Vis absorption spectra of ZnS QD confirm the quantum confinement effect. Fourier transform infrared (FTIR) analysis confirmed the formation of single phase ZnS QDs. To fabricate the diode, blend of ZnS QDs and P3HT was prepared and the heterojunction of PEDOT:PSS and the blend was formed by spin coating on indium tin oxide (ITO) coated glass substrate. The diode behaviour of the heterojunction was analysed, wherein the ideality factor was found to be 2.53 with turn on voltage 0.75 V and the barrier height was found to be 1.429 eV. ZnS-Graphene QDs nanocomposite was characterised for the surface morphological study. It was found that the synthesized ZnS QDs appear as quasi spherical particles on the graphene sheets. The average particle size of ZnS-graphene nanocomposite QDs was found to be 8.4 nm. From voltage-current characteristics of ZnS-graphene nanocomposites, it is observed that the conductivity of the composite increases by 104 times the conductivity of ZnS QDs. Thus the addition of graphene QDs in ZnS QDs enhances the mobility of the charge carriers in the composite material. Thus, the graphene QDs, with high specific area for a large interface, high mobility and tunable band gap, show a great potential as an electron-acceptors in photovoltaic devices.
Abstract: This paper presents the design parameters for a thin film 3J InGaP/GaAs/Ge solar cell with a simulated maximum efficiency of 32.11% using Tcad Silvaco. Design parameters include the doping concentration, molar fraction, layers’ thickness and tunnel junction characteristics. An initial dual junction InGaP/GaAs model of a previous published heterojunction cell was simulated in Tcad Silvaco to accurately predict solar cell performance. To improve the solar cell’s performance, we have fixed meshing, material properties, models and numerical methods. However, thickness and layer doping concentration were taken as variables. We, first simulate the InGaP\GaAs dual junction cell by changing the doping concentrations and thicknesses which showed an increase in efficiency. Next, a triple junction InGaP/GaAs/Ge cell was modeled by adding a Ge layer to the previous dual junction InGaP/GaAs model with an InGaP /GaAs tunnel junction.
Abstract: In this study, a sequential deposition process is used for the fabrication of PEDOT: PSS based inverted planar perovskite solar cell. A small amount of additive deionized water (DI-H2O) was added into PbI2 + Dimethyl formamide (DMF) precursor solution in order to increase the solubility of PbI2 in DMF, and finally to manipulate the surface morphology of the perovskite films. A morphology transition from needle like structure to hexagonal plates, and then needle-like again has been observed as the DI-H2O was added continuously (0.0 wt% to 3.0wt%). The latter one leads to full surface coverage of the perovskite, which is essential for high performance solar cell.
Abstract: This study fabricates p-type Ni1−xO:Li/n-Si heterojunction solar cells (P+/n HJSCs) by using radio frequency (RF) magnetron sputtering and investigates the effect of substrate temperature on photovoltaic cell properties. Grazing incidence x-ray diffraction, four point probe, and ultraviolet-visible-near infrared discover the optoelectrical properties of p-Ni1-xO thin films. The results show that p-Ni1-xO thin films deposited at 300 oC has the highest grain size (22.4 nm), average visible transmittance (~42%), and electrical resistivity (2.7 Ωcm). However, the conversion efficiency of cell is shown only 2.33% which is lower than the cell (3.39%) fabricated at room temperature. This result can be mainly attributed to interfacial layer thickness (SiOx) reduces from 2.35 nm to 1.70 nm, as verified by high-resolution transmission electron microscopy.
Abstract: A SnO2/CdS/CdTe heterojunction was fabricated by
thermal evaporation technique. The fabricated cells were annealed at
573K for periods of 60, 120 and 180 minutes. The structural
properties of the solar cells have been studied by using X-ray
diffraction. Capacitance- voltage measurements were studied for the
as-prepared and annealed cells at a frequency of 102 Hz. The
capacitance- voltage measurements indicated that these cells are
abrupt. The capacitance decreases with increasing annealing time.
The zero bias depletion region width and the carrier concentration
increased with increasing annealing time. The carrier transport
mechanism for the CdS/CdTe heterojunction in dark is tunneling
recombination. The ideality factor is 1.56 and the reverse bias
saturation current is 9.6×10-10A. The energy band lineup for the n-
CdS/p-CdTe heterojunction was investigated using current - voltage
and capacitance - voltage characteristics.
Abstract: n-CdO/p-Si heterojunction diode was fabricated using
sol-gel spin coating technique which is a low cost and easily scalable
method for preparing of semiconductor films. The structural and
morphological properties of CdO film were investigated. The X-ray
diffraction (XRD) spectra indicated that the film was of
polycrystalline nature. The scanning electron microscopy (SEM)
images indicate that the surface morphology CdO film consists of the
clusters formed with the coming together of the nanoparticles. The
electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode
was investigated by current-voltage. The ideality factor of the diode
was found to be 3.02 for room temperature. The reverse current of
the diode strongly increased with illumination intensity of 100
mWcm-2 and the diode gave a maximum open circuit voltage Voc of
0.04 V and short-circuits current Isc of 9.92×10-9 A.
Abstract: Herein, the organic semiconductor methyl orange
(MO), is investigated for the first time for its electronic applications.
For this purpose, Al/MO/n-Si heterojunction is fabricated through
economical cheap and simple “drop casting” technique. The currentvoltage
(I-V) measurements of the device are made at room
temperature under dark conditions. The I-V characteristics of
Al/MO/n-Si junction exhibits asymmetrical and rectifying behavior
that confirms the formation of diode. The diode parameters such as
rectification ratio (RR), turn on voltage (Vturn on), reverse saturation
current (I0), ideality factor (n), barrier height ( b
f ), series resistance
(Rs) and shunt resistance (Rsh) are determined from I-V curves using
Schottky equations. These values of these parameters are also
extracted and verified by applying Cheung’s functions. The
conduction mechanisms are explained from the forward bias I-V
characteristics using the power law.
Abstract: An organic bulk heterojunction (BHJ) was fabricated using a blended film containing Copper (II) tetrakis(4-acumylphenoxy) phthalocyanine (Tc-CuPc) along with [6,6]-Phenyl C61 butyric acid methyl ester (PCBM). Weight ratio between Tc-CuPc and PCBM was 1:1. The electrical properties of Tc-CuPc: PCBM BHJ were examined. Rectifying nature of the BHJ was displayed by current-voltage (I-V) curves, recorded in dark and at various temperatures. At low voltages, conduction was ohmic succeeded by space-charge limiting current (SCLC) conduction at higher voltages in which exponential trap distribution was dominant. Series resistance, shunt resistance, ideality factor, effective barrier height and mobility at room temperature were found to be 526 4, 482 k4, 3.7, 0.17 eV and 2×10-7 cm2V-1s-1 respectively. Temperature effect towards different BHJ parameters was observed under dark condition.