Integration of Resistive Switching Memory Cell with Vertical Nanowire Transistor

We integrate TiN/Ni/HfO2/Si RRAM cell with a vertical gate-all-around (GAA) nanowire transistor to achieve compact 4F2 footprint in a 1T1R configuration. The tip of the Si nanowire (source of the transistor) serves as bottom electrode of the memory cell. Fabricated devices with nanowire diameter ~ 50nm demonstrate ultra-low current/power switching; unipolar switching with 10μA/30μW SET and 20μA/30μW RESET and bipolar switching with 20nA/85nW SET and 0.2nA/0.7nW RESET. Further, the switching current is found to scale with nanowire diameter making the architecture promising for future scaling.

Authors:

• Xiang Li
• Zhixian Chen
• Zheng Fang
• Aashit Kamath
• Xinpeng Wang
• Navab Singh
• Guo-Qiang Lo
• Dim-Lee Kwong

Keywords:

• RRAM
• 1T1R
• gate-all-around FET
• nanowire FET
• vertical MOSFETs

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