Abstract: This research paper presents highly optimized barrel
shifter at 22nm Hi K metal gate strained Si technology node. This
barrel shifter is having a unique combination of static and dynamic
body bias which gives lowest power delay product. This power delay
product is compared with the same circuit at same technology node
with static forward biasing at ‘supply/2’ and also with normal reverse
substrate biasing and still found to be the lowest. The power delay
product of this barrel sifter is .39362X10-17J and is lowered by
approximately 78% to reference proposed barrel shifter at 32nm bulk
CMOS technology. Power delay product of barrel shifter at 22nm Hi
K Metal gate technology with normal reverse substrate bias is
2.97186933X10-17J and can be compared with this design’s PDP of
.39362X10-17J. This design uses both static and dynamic substrate
biasing and also has approximately 96% lower power delay product
compared to only forward body biased at half of supply voltage. The
NMOS model used are predictive technology models of Arizona state
university and the simulations to be carried out using HSPICE
simulator.
Abstract: In this paper, the transient device performance analysis
of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been
evaluated. 3-D Bohm Quantum Potential (BQP) transport device
simulation has been used to evaluate the delay and power dissipation
performance. GI-JLT has a number of desirable device parameters
such as reduced propagation delay, dynamic power dissipation,
power and delay product, intrinsic gate delay and energy delay
product as compared to Gate-all-around transistors GAA-JLT. In
addition to this, various other device performance parameters namely,
on/off current ratio, short channel effects (SCE), transconductance
Generation Factor (TGF) and unity gain cut-off frequency (fT ) and
subthreshold slope (SS) of the GI-JLT and GAA-JLT have been
analyzed and compared. GI-JLT shows better device performance
characteristics than GAA-JLT for low power and high frequency
applications, because of its larger gate electrostatic control on the
device operation.
Abstract: The paper proposes the novel design of a 3T XOR gate combining complementary CMOS with pass transistor logic. The design has been compared with earlier proposed 4T and 6T XOR gates and a significant improvement in silicon area and power-delay product has been obtained. An eight transistor full adder has been designed using the proposed three-transistor XOR gate and its performance has been investigated using 0.15um and 0.35um technologies. Compared to the earlier designed 10 transistor full adder, the proposed adder shows a significant improvement in silicon area and power delay product. The whole simulation has been carried out using HSPICE.