Abstract: In this paper, by exploiting a single semiconductor
optical amplifier-Mach Zehnder Interferometer (SOA-MZI), an
integratable all-optical flip-flop (AOFF) is proposed. It is composed
of a SOA-MZI with a bidirectional coupler at the output. Output
signals of both bar and crossbar of the SOA-MZI is fed back to SOAs
located in the arms of the Mach-Zehnder Interferometer (MZI). The
injected photon-rates to the SOAs are modulated by feedback signals
in order to form optical flip-flop. According to numerical analysis,
Gaussian optical pulses with the energy of 15.2 fJ and 20 ps duration
with the full width at half-maximum criterion, can switch the states of
the SR-AOFF. Also simulation results show that the SR-AOFF has
the contrast ratio of 8.5 dB between two states with the transition
time of nearly 20 ps.
Abstract: In this paper, based on the coupled-mode and carrier rate equations, derivation of a dynamic model and numerically analysis of a MQW chirped DFB-SOA all-optical flip-flop is done precisely. We have analyzed the effects of strains of QW and MQW and cross phase modulation (XPM) on the dynamic response, and rise and fall times of the DFB-SOA all optical flip flop. We have shown that strained MQW active region in under an optimized condition into a DFB-SOA with chirped grating can improve the switching ON speed limitation in such a of the device, significantly while the fall time is increased. The values of the rise times for such an all optical flip-flop, are obtained in an optimized condition, areas tr=255ps.
Abstract: Over the past years, the EMCCD has had a profound
influence on photon starved imaging applications relying on its unique
multiplication register based on the impact ionization effect in the
silicon. High signal-to-noise ratio (SNR) means high image quality.
Thus, SNR improvement is important for the EMCCD. This work
analyzes the SNR performance of an EMCCD with gain off and on. In
each mode, simplified SNR models are established for different
integration times. The SNR curves are divided into readout noise (or
CIC) region and shot noise region by integration time. Theoretical
SNR values comparing long frame integration and frame adding in
each region are presented and discussed to figure out which method is
more effective. In order to further improve the SNR performance,
pixel binning is introduced into the EMCCD. The results show that
pixel binning does obviously improve the SNR performance, but at the
expensive of the spatial resolution.
Abstract: In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.
Abstract: This paper is concerned with motion recognition based fuzzy WP(Wavelet Packet) feature extraction approach from Vicon physical data sets. For this purpose, we use an efficient fuzzy mutual-information-based WP transform for feature extraction. This method estimates the required mutual information using a novel approach based on fuzzy membership function. The physical action data set includes 10 normal and 10 aggressive physical actions that measure the human activity. The data have been collected from 10 subjects using the Vicon 3D tracker. The experiments consist of running, seating, and walking as physical activity motion among various activities. The experimental results revealed that the presented feature extraction approach showed good recognition performance.
Abstract: This paper uses quasi-steady molecular statics model
and diamond tool to carry out simulation temperature rise of nanoscale
orthogonal cutting single-crystal silicon. It further qualitatively
analyzes temperature field of silicon workpiece without considering
heat transfer and considering heat transfer. This paper supposes that
the temperature rise of workpiece is mainly caused by two heat sources:
plastic deformation heat and friction heat. Then, this paper develops a
theoretical model about production of the plastic deformation heat and
friction heat during nanoscale orthogonal cutting. After the increased
temperature produced by these two heat sources are added up, the
acquired total temperature rise at each atom of the workpiece is
substituted in heat transfer finite difference equation to carry out heat
transfer and calculates the temperature field in each step and makes
related analysis.
Abstract: In order to enhance the usability of the human computer interface (HCI) on the touchscreen, this study explored the optimal tactile depth and effect of visual cues on the user-s tendency to touch the touchscreen icons. The experimental program was designed on the touchscreen in this study. Results indicated that the ratio of the icon size to the tactile depth was 1:0.106. There were significant effects of experienced users and novices on the tactile feedback depth (p < 0.01). In addition, the results proved that the visual cues provided a feedback that helped to guide the user-s touch icons accurately and increased the capture efficiency for a tactile recognition field. This tactile recognition field was 18.6 mm in length. There was consistency between the experienced users and novices under the visual cue effects. Finally, the study developed an applied design with touch feedback for touchscreen icons.
Abstract: The burst noise is a kind of noises that are destructive
and frequently found in semiconductor devices and ICs, yet detecting
and removing the noise has proved challenging for IC designers or users. According to the properties of burst noise, a methodological
approach is presented (proposed) in the paper, by which the burst noise
can be analysed and detected in time domain. In this paper, principles
and properties of burst noise are expounded first, Afterwards,
feasibility (viable) of burst noise detection by means of wavelet
transform in the time domain is corroborated in the paper, and the multi-resolution characters of Gaussian noise, burst noise and blurred
burst noise are discussed in details by computer emulation. Furthermore, the practical method to decide parameters of wavelet
transform is acquired through a great deal of experiment and data statistics. The methodology may yield an expectation in a wide variety of applications.
Abstract: In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage.
Abstract: Films of pure tin oxide SnO2 and in presence of
antimony atoms (SnO2-Sb) deposited onto glass substrates have
shown a sufficiently high energy gap to be transparent in the visible
region, a high electrical mobility and a carrier concentration which
displays a good electrical conductivity [1]. In this work, the effects of
polycrystalline silicon substrate on the optical properties of pure and
Sb doped tin oxide is investigated.
We used the APCVD (atmospheric pressure chemical vapour
deposition) technique, which is a low-cost and simple technique,
under nitrogen ambient, for growing this material. A series of SnO2
and SnO2-Sb have been deposited onto polycrystalline silicon
substrates with different contents of antimony atoms at the same
conditions of deposition (substrate temperature, flow oxygen,
duration and nitrogen atmosphere of the reactor). The effect of the
substrate in terms of morphology and nonlinear optical properties,
mainly the reflectance, was studied. The reflectance intensity of the
device, compared to the reflectance of tin oxide films deposited
directly on glass substrate, is clearly reduced on the overall
wavelength range. It is obvious that the roughness of the poly-c
silicon plays an important role by improving the reflectance and
hence the optical parameters.
A clear shift in the minimum of the reflectance upon doping level
is observed. This minimum corresponds to strong free carrier
absorption, resulting in different plasma frequency. This effect is
followed by an increase in the reflectance depending of the antimony
doping. Applying the extended Drude theory to the combining
optical and electrical obtained results these effects are discussed.
Abstract: The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible micro- Raman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer resulting from a wafer bowing, while the UV micro-Raman indicates a tensile interfacial stress induced at the top GaN/AlGaN/AlN layers. PL shows a good crystal quality GaN channel where the yellow band intensity is very low compared to that of the near-band-edge transition. The uniformity of this sample is shown by measurements from several points across the epiwafer.
Abstract: A novel nanofinishing process using improved ball
end magnetorheological (MR) finishing tool was developed for finishing of flat as well as 3D surfaces of ferromagnetic and non ferromagnetic workpieces. In this process a magnetically controlled
ball end of smart MR polishing fluid is generated at the tip surface of
the tool which is used as a finishing medium and it is guided to
follow the surface to be finished through computer controlled 3-axes
motion controller. The experiments were performed on ferromagnetic
workpiece surface in the developed MR finishing setup to study the effect of finishing time on final surface roughness. The performance
of present finishing process on final finished surface roughness was studied. The surface morphology was observed under scanning
electron microscopy and atomic force microscope. The final surface finish was obtained as low as 19.7 nm from the initial surface
roughness of 142.9 nm. The outcome of newly developed finishing process can be found useful in its applications in aerospace,
automotive, dies and molds manufacturing industries, semiconductor and optics machining etc.
Abstract: The beneficial effects of Si are mainly associated with
its high deposition in plant tissue and enhancing their strength and
rigidity. We investigated the role of Si against cadmium stress in
(Echium C) in house green condition. When the seventh leaves was
be appeared, plants were pretreated with five levels of Si: 0, 0.2, 0.5,
0.7and 1.5 mM Si (as sodium trisilicate, Na2(SiO2)3) and after that
plants were treated with two levels of Cd (30 and 90 mM). The
effects of Silicon and Cd were investigated on some physiological
and biochemical parameters such as: lipid peroxidation
(malondialdehyde (MDA) and other aldehydes, antocyanin and
flavonoid content. Our results showed that Cd significantly increased
MDA, other aldehydes, antocyanin and flavonoids content in
Echium and silicon offset the negative effect and increased tolerance
of Echium against Cd stress. From this results we concluded that Si
increase membrane integrity and antioxidative ability in this plant
against cd stress.
Abstract: In this work, thermoelastic damping effect on the hemi- spherical shells is investigated. The material is selected silicon, and heat conduction equation for thermal flow is solved to obtain the temperature profile in which bending approximation with inextensional assumption of the model. Using the temperature profile, eigen-value analysis is performed to get the natural frequencies of hemispherical shells. Effects of mode numbers, radii and radial thicknesses of the model on the natural frequencies are analyzed in detail. Furthermore, the quality factor (Q-factor) is defined, and discussed for the ring and hemispherical shell.
Abstract: A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.
Abstract: Fluorescent and WOLED are widely used because it consumes less energy. However, both lamps cause a harmonics because it has semiconductors components. Harmonic is a distorted sinusoidal electric wave and cause excess heat. This study compares the amount of harmonics generated by both lamps. The test shows that both lamps have THDv(Total Harmonics Distortion of Voltage) almost the same with average 2.5% while the average of WOLED's THDi(Total Harmonics Distortion of Current) is lower than fluorescent has. The average WOLED's THDi is 29.10 % and fluorescent's 'THDi is 87. 23 %.
Abstract: This study created new graphical icons and operating
functions in a CAD/CAM software system by analyzing icons in some
of the popular systems, such as AutoCAD, AlphaCAM, Mastercam
and the 1st edition of LiteCAM. These software systems all focused on
geometric design and editing, thus how to transmit messages
intuitively from icon itself to users is an important function of
graphical icons. The primary purpose of this study is to design
innovative icons and commands for new software.
This study employed the TRIZ method, an innovative design
method, to generate new concepts systematically. Through literature
review, it then investigated and analyzed the relationship between
TRIZ and idea development. Contradiction Matrix and 40 Principles
were used to develop an assisting tool suitable for icon design in
software development. We first gathered icon samples from the
selected CAD/CAM systems. Then grouped these icons by
meaningful functions, and compared useful and harmful properties.
Finally, we developed new icons for new software systems in order to
avoid intellectual property problem.
Abstract: The systematic manipulations of shapes and sizes of
inorganic compounds greatly benefit the various application fields
including optics, magnetic, electronics, catalysis and medicine.
However shape control has been much more difficult to achieve.
Hence exploration of novel method for the preparation of differently
shaped nanoparticles is challenging research area. II-VI group of
semiconductor cadmium sulphide (CdS) nanostructure with different
morphologies (such as, acicular like, mesoporous, spherical shapes)
and of crystallite sizes vary from 11 to 16 nm were successfully
synthesized by chemical aqueous precipitation of Cd2+ ions with
homogeneously released S2- ions from decomposition of cadmium
sulphate (CdSO4) and thioacetamide (CH3CSNH2) by annealing at
different radiations (microwave, ultrasonic and sunlight) with matter
and systematic research has been done for various factors affecting
the controlled growth rate of CdS nanoparticles. The obtained
nanomaterials have been characterized by X-ray Diffraction (XRD),
Fourier Transform Infrared Spectroscopy (FTIR),
Thermogravometric (DSC-TGA) analysis and Scanning Electron
Microscopy (SEM). The result indicates that on increasing the
reaction time particle size increases but on increasing the molar ratios
grain size decreases.
Abstract: Un-doped GaN film of thickness 1.90 mm, grown on
sapphire substrate were uniformly implanted with 325 keV Mn+ ions
for various fluences varying from 1.75 x 1015 - 2.0 x 1016 ions cm-2 at
3500 C substrate temperature. The structural, morphological and
magnetic properties of Mn ion implanted gallium nitride samples
were studied using XRD, AFM and SQUID techniques. XRD of the
sample implanted with various ion fluences showed the presence of
different magnetic phases of Ga3Mn, Ga0.6Mn0.4 and Mn4N.
However, the compositions of these phases were found to be
depended on the ion fluence. AFM images of non-implanted sample
showed micrograph with rms surface roughness 2.17 nm. Whereas
samples implanted with the various fluences showed the presence of
nano clusters on the surface of GaN. The shape, size and density of
the clusters were found to vary with respect to ion fluence. Magnetic
moment versus applied field curves of the samples implanted with
various fluences exhibit the hysteresis loops. The Curie temperature
estimated from zero field cooled and field cooled curves for the
samples implanted with the fluence of 1.75 x 1015, 1.5 x 1016 and 2.0
x 1016 ions cm-2 was found to be 309 K, 342 K and 350 K
respectively.
Abstract: n-CdO/p-Si heterojunction diode was fabricated using
sol-gel spin coating technique which is a low cost and easily scalable
method for preparing of semiconductor films. The structural and
morphological properties of CdO film were investigated. The X-ray
diffraction (XRD) spectra indicated that the film was of
polycrystalline nature. The scanning electron microscopy (SEM)
images indicate that the surface morphology CdO film consists of the
clusters formed with the coming together of the nanoparticles. The
electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode
was investigated by current-voltage. The ideality factor of the diode
was found to be 3.02 for room temperature. The reverse current of
the diode strongly increased with illumination intensity of 100
mWcm-2 and the diode gave a maximum open circuit voltage Voc of
0.04 V and short-circuits current Isc of 9.92×10-9 A.