Abstract: The design of Class A and Class AB 2-stage X band
Power Amplifier is described in this report. This power amplifier is
part of a transceiver used in radar for monitoring iron characteristics
in a blast furnace. The circuit was designed using foundry WIN
Semiconductors. The specification requires 15dB gain in the linear
region, VSWR nearly 1 at input as well as at the output, an output
power of 10 dBm and good stable performance in the band 10.9-12.2
GHz. The design was implemented by using inter-stage
configuration, the Class A amplifier was chosen for driver stage i.e.
the first amplifier focusing on the gain and the output amplifier
conducted at Class AB with more emphasis on output power.
Abstract: to simulate the phenomenon of electronic transport in semiconductors, we try to adapt a numerical method, often and most frequently it’s that of Monte Carlo. In our work, we applied this method in the case of a ternary alloy semiconductor GaInP in its cubic form; The Calculations are made using a non-parabolic effective-mass energy band model. We consider a band of conduction to three valleys (ΓLX), major of the scattering mechanisms are taken into account in this modeling, as the interactions with the acoustic phonons (elastic collisions) and optics (inelastic collisions). The polar optical phonons cause anisotropic collisions, intra-valleys, very probable in the III-V semiconductors. Other optical phonons, no polar, allow transitions inter-valleys. Initially, we present the full results obtained by the simulation of Monte Carlo in GaInP in stationary regime. We consider thereafter the effects related to the application of an electric field varying according to time, we thus study the transient phenomenon which make their appearance in ternary material
Abstract: Noble metal participation in nanostructured
semiconductor catalysts has drawn much interest because of their
improved properties. Recently, it has been discussed by many
researchers that Ag participation in TiO2, CuO, ZnO semiconductors
showed improved photocatalytic and optical properties. In this
research, Ag/ZnO nanocomposite particles were prepared by
Ultrasonic Spray Pyrolysis(USP) Method. 0.1M silver and zinc
nitrate aqueous solutions were used as precursor solutions. The
Ag:Zn atomic ratio of the solution was selected 1:1. Experiments
were taken place under constant air flow of 400 mL/min at 800°C
furnace temperature. Particles were characterized by X-Ray
Diffraction (XRD), Scanning Electron Microscope (SEM) and
Energy Dispersive Spectroscopy (EDS). The crystallite sizes of Ag
and ZnO in composite particles are 24.6 nm, 19.7 nm respectively.
Although, spherical nanocomposite particles are in a range of 300-
800 nm, these particles are formed by the aggregation of primary
particles which are in a range of 20-60 nm.
Abstract: The InAlGaN alloy has only recently began receiving
serious attention into its growth and application. High quality InGaN
films have led to the development of light emitting diodes (LEDs) and
blue laser diodes (LDs). The quaternary InAlGaN however, represents
a more versatile material since the bandgap and lattice constant can be
independently varied. We report an ultraviolet (UV) quaternary
InAlGaN multi-quantum wells (MQWs) LD study by using the
simulation program of Integrated System Engineering (ISE TCAD).
Advanced physical models of semiconductor properties were used in
order to obtain an optimized structure. The device performance which
is affected by piezoelectric and thermal effects was studied via
drift-diffusion model for carrier transport, optical gain and loss. The
optical performance of the UV LD with different numbers of quantum
wells was numerically investigated. The main peak of the emission
wavelength for double quantum wells (DQWs) was shifted from 358
to 355.8 nm when the forward current was increased. Preliminary
simulated results indicated that better output performance and lower
threshold current could be obtained when the quantum number is four,
with output power of 130 mW and threshold current of 140 mA.
Abstract: Three-phase induction machines are today a standard
for industrial electrical drives. Cost, reliability, robustness and maintenance free operation are among the reasons these machines are
replacing dc drive systems. The development of power electronics
and signal processing systems has eliminated one of the greatest
disadvantages of such ac systems, which is the issue of control. With
modern techniques of field oriented vector control, the task of
variable speed control of induction machines is no longer a
disadvantage. The need to increase system performance, particularly
when facing limits on the power ratings of power supplies and
semiconductors, motivates the use of phase number other than three,
In this paper a novel scheme of connecting two, three phase
induction motors in parallel fed by two inverters; viz. VSI and CSI
and their vector control is presented.
Abstract: Quaternary InxAlyGa1-x-yN semiconductors have
attracted much research interest because the use of this quaternary
offer the great flexibility in tailoring their band gap profile while
maintaining their lattice-matching and structural integrity. The
structural and optical properties of InxAlyGa1-x-yN alloys grown by
molecular beam epitaxy (MBE) is presented. The structural quality of
InxAlyGa1-x-yN layers was characterized using high-resolution X-ray
diffraction (HRXRD). The results confirm that the InxAlyGa1-x-yN
films had wurtzite structure and without phase separation. As the In
composition increases, the Bragg angle of the (0002) InxAlyGa1-x-yN
peak gradually decreases, indicating the increase in the lattice constant
c of the alloys. FWHM of (0002) InxAlyGa1-x-yN decreases with
increasing In composition from 0 to 0.04, that could indicate the
decrease of quality of the samples due to point defects leading to
non-uniformity of the epilayers. UV-VIS spectroscopy have been used
to study the energy band gap of InxAlyGa1-x-yN. As the indium (In)
compositions increases, the energy band gap decreases. However, for
InxAlyGa1-x-yN with In composition of 0.1, the band gap shows a
sudden increase in energy. This is probably due to local alloy
compositional fluctuations in the epilayer. The bowing parameter
which appears also to be very sensitive on In content is investigated
and obtained b = 50.08 for quaternary InxAlyGa1-x-yN alloys. From
photoluminescence (PL) measurement, green luminescence (GL)
appears at PL spectrum of InxAlyGa1-x-yN, emitted for all x at ~530 nm
and it become more pronounced as the In composition (x) increased,
which is believed cause by gallium vacancies and related to isolated
native defects.
Abstract: A simple and dexterous in situ method was introduced to load CdS nanocrystals into organofunctionalized mesoporous, which used an ion-exchange method. The products were extensively characterized by combined spectroscopic methods. X- ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) demonstrated both the maintenance of pore symmetry (space group p6mm) of SBA-15 and the presence of CdS nanocrystals with uniform sizes of about 6 - 8 nm inside the functionalized SBA-15 channels. These mesoporous silica-supported CdS composites showed room temperature photoluminescence properties with a blue shift, indicating the quantum size effect of nanocrystalline CdS.
Abstract: Induction motors are being used in greater numbers
throughout a wide variety of industrial and commercial applications
because it provides many benefits and reliable device to convert the
electrical energy into mechanical motion. In some application it-s
desired to control the speed of the induction motor. Because of the
physics of the induction motor the preferred method of controlling its
speed is to vary the frequency of the AC voltage driving the motor. In
recent years, with the microcontroller incorporated into an appliance
it becomes possible to use it to generate the variable frequency AC
voltage to control the speed of the induction motor.
This study investigates the microcontroller based variable
frequency power inverter. the microcontroller is provide the variable
frequency pulse width modulation (PWM) signal that control the
applied voltage on the gate drive, which is provides the required
PWM frequency with less harmonics at the output of the power
inverter.
The fully controlled bridge voltage source inverter has been
implemented with semiconductors power devices isolated gate
bipolar transistor (IGBT), and the PWM technique has been
employed in this inverter to supply the motor with AC voltage.
The proposed drive system for three & single phase power inverter
is simulated using Matlab/Simulink. The Matlab Simulation Results
for the proposed system were achieved with different SPWM. From
the result a stable variable frequency inverter over wide range has
been obtained and a good agreement has been found between the
simulation and hardware of a microcontroller based single phase
inverter.
Abstract: In this article, a high vacuum system for the evaporation of organic semiconductors is introduced and a mathematical model is given. Based on the exact input output linearization a deposition rate controller is designed and tested with different evaporation materials.
Abstract: The optical properties of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers are numerically studied using ISE TCAD (Integrated System Engineering) simulation program. Improvements in laser optical performance have been achieved using quaternary alloy as superlattice layers in InGaN/GaN laser diodes. Lower threshold current of 18 mA and higher output power and slope efficiency of 22 mW and 1.6 W/A, respectively, at room temperature have been obtained. The laser structure with InAlGaN quaternary alloys as an electron blocking layer was found to provide better laser performance compared with the ternary AlxGa1-xN blocking layer.
Abstract: Fluorescent and WOLED are widely used because it consumes less energy. However, both lamps cause a harmonics because it has semiconductors components. Harmonic is a distorted sinusoidal electric wave and cause excess heat. This study compares the amount of harmonics generated by both lamps. The test shows that both lamps have THDv(Total Harmonics Distortion of Voltage) almost the same with average 2.5% while the average of WOLED's THDi(Total Harmonics Distortion of Current) is lower than fluorescent has. The average WOLED's THDi is 29.10 % and fluorescent's 'THDi is 87. 23 %.
Abstract: We report here structural, mechanical and I-V
characteristics of Zn1-xMxO ceramic samples with various x and M.
It is found that the considered dopants does not influence the wellknown
peaks related to wurtzite structure of ZnO ceramics, while the
shape and size of grains are clearly affected. Average crystalline
diameters, deduced from XRD are between 42 nm and 54 nm, which
are 70 times lower than those obtained from SEM micrographs.
Interestingly, the potential barrier could be formed by adding Cu up
to 0.20, and it is completely deformed by 0.025 Ni additions. The
breakdown field could be enhanced up to 4138 V/cm by 0.025 Cu
additions, followed by a decrease with further increase of Cu . On
the other hand a gradual decrease in VHN is reported for both
dopants and their values are higher in Ni samples as compared to Cu
samples. The electrical conductivity is generally improved by Ni,
while addition of Cu improved it only in the over doped region (≥
0.10). These results are discussed in terms of the difference of
valency and ferromagnetic ordering for both dopants as compared to
undoped sample.
Abstract: In recent times there has been a growing interest in the
development of quasi-two-dimensional niobium pentoxide (Nb2O5)
as a semiconductor for the potential electronic applications such as
capacitors, filtration, dye-sensitised solar cells and gas sensing
platforms. Therefore once the purpose is established, Nb2O5 can be
prepared in a number of nano- and sub-micron-structural
morphologies that include rods, wires, belts and tubes. In this study
films of Nb2O5 were prepared on gold plated silicon substrate using
spin-coating technique and subsequently by mechanical exfoliation.
The reason this method was employed was to achieve layers of less
than 15nm in thickness. The sintering temperature of the specimen
was 800oC. The morphology and structural characteristics of the
films were analyzed by Atomic Force Microscopy (AFM), Raman
Spectroscopy, X-ray Photoelectron Spectroscopy (XPS).
Abstract: III-nitride quaternary InxAlyGa1-x-yN alloys have experienced considerable interest as potential materials for optoelectronic applications. Despite these interesting applications and the extensive efforts to understand their fundamental properties, research on its fundamental surface property, i.e., surface phonon polariton (SPP) has not yet been reported. In fact, the SPP properties have been shown to provide application for some photonic devices. Hence, there is an absolute need for thorough studies on the SPP properties of this material. In this work, theoretical study on the SPP modes in InAlGaN quaternary alloys are reported. Attention is focus on the wurtzite (α-) structure InxAlyGa1-x-yN semi-crystal with different In composition, x ranging from 0 to 0.10 and constant Al composition, y = 0.06. The SPP modes are obtained through the theoretical simulation by means of anisotropy model. The characteristics of SP dispersion curves are discussed. Accessible results in terms of the experimental point of view are also given. Finally, the results revealed that the SPP mode of α-InxAlyGa1-x-yN semiconductors exhibits two-mode behavior.