Abstract: Resistive switching of aluminum nitride (AlNx) thin film was demonstrated in a TaN/AlNx/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), RHRS/RLRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlNx/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlNx film.
Abstract: Films of pure tin oxide SnO2 and in presence of
antimony atoms (SnO2-Sb) deposited onto glass substrates have
shown a sufficiently high energy gap to be transparent in the visible
region, a high electrical mobility and a carrier concentration which
displays a good electrical conductivity [1]. In this work, the effects of
polycrystalline silicon substrate on the optical properties of pure and
Sb doped tin oxide is investigated.
We used the APCVD (atmospheric pressure chemical vapour
deposition) technique, which is a low-cost and simple technique,
under nitrogen ambient, for growing this material. A series of SnO2
and SnO2-Sb have been deposited onto polycrystalline silicon
substrates with different contents of antimony atoms at the same
conditions of deposition (substrate temperature, flow oxygen,
duration and nitrogen atmosphere of the reactor). The effect of the
substrate in terms of morphology and nonlinear optical properties,
mainly the reflectance, was studied. The reflectance intensity of the
device, compared to the reflectance of tin oxide films deposited
directly on glass substrate, is clearly reduced on the overall
wavelength range. It is obvious that the roughness of the poly-c
silicon plays an important role by improving the reflectance and
hence the optical parameters.
A clear shift in the minimum of the reflectance upon doping level
is observed. This minimum corresponds to strong free carrier
absorption, resulting in different plasma frequency. This effect is
followed by an increase in the reflectance depending of the antimony
doping. Applying the extended Drude theory to the combining
optical and electrical obtained results these effects are discussed.
Abstract: In this investigation, anatase TiO2 thin films were
grown by radio frequency magnetron sputtering on glass substrates at
a high sputtering pressure and room temperature. The anatase films
were then annealed at 300-600 °C in air for a period of 1 hour. To
examine the structure and morphology of the films, X-ray diffraction
(XRD) and atomic force microscopy (AFM) methods were used
respectively. From X-ray diffraction patterns of the TiO2 films, it was
found that the as-deposited film showed some differences compared
with the annealed films and the intensities of the peaks of the
crystalline phase increased with the increase of annealing
temperature. From AFM images, the distinct variations in the
morphology of the thin films were also observed. The optical
constants were characterized using the transmission spectra of the
films obtained by UV-VIS-IR spectrophotometer. Besides, optical
thickness of the film deposited at room temperature was calculated
and cross-checked by taking a cross-sectional image through SEM.
The optical band gaps were evaluated through Tauc model. It was
observed that TiO2 films produced at room temperatures exhibited
high visible transmittance and transmittance decreased slightly with
the increase of annealing temperatures. The films were found to be
crystalline having anatase phase. The refractive index of the films
was found from 2.31-2.35 in the visible range. The extinction
coefficient was nearly zero in the visible range and was found to
increase with annealing temperature. The allowed indirect optical
band gap of the films was estimated to be in the range from 3.39 to
3.42 eV which showed a small variation. The allowed direct band
gap was found to increase from 3.67 to 3.72 eV. The porosity was
also found to decrease at a higher annealing temperature making the
film compact and dense.
Abstract: The effect of chemical treatment in CdCl2 and thermal
annealing in 400°C, on the defect structures of potentially useful
ZnS\CdS solar cell thin films deposited onto quartz substrate and
prepared by vacuum deposition method was studied using the
Thermoluminesence (TL) techniques. A series of electron and hole
traps are found in the various deposited samples studied. After
annealing, however, it was observed that the intensity and activation
energy of TL signal increases with loss of the low temperature
electron traps.
Abstract: The effect of SnO2 surface modification by Ag nanoclusters, synthesized by SILD method, on the operating characteristics of thin film gas sensors was studied and models for the promotional role of Ag additives were discussed. It was found that mentioned above approach can be used for improvement both the sensitivity and the rate of response of the SnO2-based gas sensors to CO and H2. At the same time, the presence of the Ag clusters on the surface of SnO2 depressed the sensor response to ozone.
Abstract: The selective wet-etching of amorphous and
crystalline region of Sb20Se80 thin films was carried out using organic
based solution e.g. amines. We report the development of an in situ
real-time method to study the wet chemical etching process of thin
films. Characterization of the structure and surface of films studied
by X-ray diffraction, SEM and EBSD methods has been done and
potential application suggested.
Abstract: This paper presents a comparative study on
Vanadyl Phthalocyanine (VOPc) thin films deposited by thermal
evaporation and spin coating techniques. The samples
were prepared on cleaned glass substrates and annealed at
various temperatures ranging form 95oC to 155oC. To obtain
the morphological and structural properties of VOPc thin
films, X-ray diffraction (XRD) technique and atomic force
microscopy (AFM) have been implied. The AFM topographic
images show a very slight difference in the thermally grown
films, before and after annealing, however best results are
achieved for the spin-cast film annealed at 125oC. The XRD
spectra show no existence of the sharp peaks, suggesting the
material to be amorphous. The humps in the XRD patterns
indicate the presence of some crystallites.
Abstract: Sol-gel method has been used to fabricate
nanocomposite films on glass substrates composed halloysite clay
mineral and nanocrystalline TiO2. The methodology for the synthesis
involves a simple chemistry method utilized nonionic surfactant
molecule as pore directing agent along with the acetic acid-based solgel
route with the absence of water molecules. The thermal treatment
of composite films at 450oC ensures elimination of organic material
and lead to the formation of TiO2 nanoparticles onto the surface of
the halloysite nanotubes. Microscopy techniques and porosimetry
methods used in order to delineate the structural characteristics of the
materials. The nanocomposite films produced have no cracks and
active anatase crystal phase with small crystallite size were deposited
on halloysite nanotubes. The photocatalytic properties for the new
materials were examined for the decomposition of the Basic Blue 41
azo dye in solution. These, nanotechnology based composite films
show high efficiency for dye’s discoloration in spite of different
halloysite quantities and small amount of halloysite/TiO2 catalyst
immobilized onto glass substrates. Moreover, we examined the
modification of the halloysite/TiO2 films with silver particles in order
to improve the photocatalytic properties of the films. Indeed, the
presence of silver nanoparticles enhances the discoloration rate of the
Basic Blue 41 compared to the efficiencies obtained for unmodified
films.
Abstract: In this paper, we proposed the effects of Mo thickness
on the properties of AZO/Mo/AZO multilayer thin films for
opto-electronics applications. The structural, optical and electrical
properties of AZO/Mo/AZO thin films were investigated.
Optimization of the thin films coatings resulted with low resistivity of
9.98 × 10-5 )-cm, mobility of 12.75 cm2/V-s, carrier concentration of
1.05 × 1022 cm-3, maximum transmittance of 79.13% over visible
spectrum of 380 – 780 nm and Haacke figure of merit (FOM) are 5.95
× 10-2 )-1 under Mo layer thickness of 15 nm. These results indicate an
alternative candidate for use as a transparent electrode in solar cells
and various displays applications.
Abstract: ZnO+Ga2O3 functionally graded thin films (FGTFs)
were examined for their potential use as Solar cell and organic light
emitting diodes (OLEDs). FGTF transparent conducting oxides (TCO)
were fabricated by combinatorial RF magnetron sputtering. The
composition gradient was controlled up to 10% by changing the
plasma power of the two sputter guns. A Ga2O3+ZnO graded region
was placed on the top layer of ZnO. The FGTFs showed up to 80%
transmittance. Their surface resistances were reduced to < 10% by
increasing the Ga2O3: pure ZnO ratio in the TCO. The FGTFs- work
functions could be controlled within a range of 0.18 eV. The
controlled work function is a very promising technology because it
reduces the contact resistance between the anode and Hall transport
layers of OLED and solar cell devices.
Abstract: Tungsten trioxide has been prepared by using P-PTA
as a precursor on alumina substrates by spin coating method.
Palladium introduced on WO3 film via electrolysis deposition by
using palladium chloride as catalytic precursor. The catalytic
precursor was introduced on the series of films with different
morphologies. X-ray diffractometry (XRD), Scanning electron
microscopy (SEM) and XPS were applied to analyze structure and
morphology of the fabricated thin films. Then we measured variation
of samples- electrical conductivity of pure and Pd added films in air
and diluted hydrogen. Addition of Pd resulted in a remarkable
improvement of the hydrogen sensing properties of WO3 by detection
of Hydrogen below 1% at room temperature. Also variation of the
electrical conductivity in the presence of diluted hydrogen revealed
that response of samples depends rather strongly on the palladium
configuration on the surface.
Abstract: The morphological parameter of a thin film surface
can be characterized by power spectral density (PSD) functions
which provides a better description to the topography than the RMS
roughness and imparts several useful information of the surface
including fractal and superstructure contributions. Through the
present study Nanoparticle copper/carbon composite films were
prepared by co-deposition of RF-Sputtering and RF-PECVD method
from acetylene gas and copper target. Surface morphology of thin
films is characterized by using atomic force microscopy (AFM). The
Carbon content of our films was obtained by Rutherford Back
Scattering (RBS) and it varied from .4% to 78%. The power values of
power spectral density (PSD) for the AFM data were determined by
the fast Fourier transform (FFT) algorithms. We investigate the effect
of carbon on the roughness of thin films surface. Using such
information, roughness contributions of the surface have been
successfully extracted.