Abstract: TiO2 thin films have been prepared by the sol-gel dipcoating
technique in order to elaborate antireflective thin films for
monocrystalline silicon (mono-Si). The titanium isopropoxyde was
chosen as a precursor with hydrochloric acid as a catalyser for
preparing a stable solution. The optical properties have been tailored
with varying the solution concentration, the withdrawn speed, and the
heat-treatment. We showed that using a TiO2 single layer with 64.5
nm in thickness, heat-treated at 450°C or 300°C reduces the mono-Si
reflection at a level lower than 3% over the broadband spectral
domains [669-834] nm and [786-1006] nm respectively. Those latter
performances are similar to the ones obtained with double layers of
low and high refractive index glasses respectively.
Abstract: Single-phase, high band gap energy Zn0.5Mg0.5O films were grown under oxygen pressure, using pulse laser deposition with a Zn0.5Mg0.5O target. Structural characterization studies revealed that the crystal structures of the ZnX-1MgXO films could be controlled via changes in the oxygen pressure. TEM analysis showed that the thickness of the deposited Zn1-xMgxO thin films was 50–75 nm. As the oxygen pressure increased, we found that one axis of the crystals did not show a very significant increase in the crystallization compared with that observed at low oxygen pressure. The X-ray diffraction peak intensity for the hexagonal-ZnMgO (002) plane increased relative to that for the cubic-ZnMgO (111) plane. The corresponding c-axis of the h-ZnMgO lattice constant increased from 5.141 to 5.148 Å, and the a-axis of the c-ZnMgO lattice constant decreased from 4.255 to 4.250 Å. EDX analysis showed that the Mg content in the mixed-phase ZnMgO films decreased significantly, from 54.25 to 46.96 at.%. As the oxygen pressure was increased from 100 to 150 mTorr, the absorption edge red-shifted from 3.96 to 3.81 eV; however, a film grown at the highest oxygen pressure tested here (200 mTorr).
Abstract: In this study, the Mo-electrode thin films were deposited using two-stepped process and the high purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by using hydrothermal process by Nanowin Technology Co. Ltd. Because the CIS powder was aggregated into microscale particles, the CIS power was ground into nano-scale particles. 6 wt% CIS particles were mixed and dispersed into isopropyl alcohol (IPA). A new non-vacuum thin-film deposition process, spray coating method (SPM), was investigated to deposit the high-densified CIS absorber layers. 0.1 ml CIS solution was sprayed on the 20 mm×10 mm Mo/glass substrates and then the CuInSe2 thin films were annealed in a selenization furnace using N2 as atmosphere. The annealing temperature and time were set at 550oC and 5 min, and 0.0g~0.6g extra Se content was added in the furnace. The influences of extra Se content on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.
Abstract: In this study, we investigated (In,Ga,Zn)Ox (IGZO) thin films and examined their characteristics of using Ga2O3-2 ZnO (GZO) co-sputtered In2O3 prepared by dual target radio frequency magnetron sputtering at room temperature in a pure Ar atmosphere. RF powers of 80 W and 70 W were used for GZO and pure In2O3, room temperature (RT) was used as deposition temperature, and the deposition time was changed from 15 min to 60 min. Structural, surface, electrical, and optical properties of IGZO thin films were investigated as a function of deposition time. Furthermore, the GZO co-sputtered In2O3 thin films showed a very smooth and featureless surface and an amorphous structure regardless of the deposition time due to the room temperature sputtering process. We would show that the co-sputtered IGZO thin films exhibited transparent electrode properties with high transmittance ratio and low resistivity.
Abstract: This work details the generation of thin films of
structured zeolite catalysts (ZSM–5 and Y) onto the surface of a
metal substrate (FeCrAlloy) using in-situ hydrothermal synthesis. In
addition, the zeolite Y is post-synthetically modified by acidified
ammonium ion exchange to generate US-Y. Finally the catalytic
activity of the structured ZSM-5 catalyst films (Si/Al = 11, thickness
146 0m) and structured US–Y catalyst film (Si/Al = 8, thickness
230m) were compared with the pelleted powder form of ZSM–5 and
USY catalysts of similar Si/Al ratios.
The structured catalyst films have been characterised using a range
of techniques, including X-ray diffraction (XRD), Electron
microscopy (SEM), Energy Dispersive X–ray analysis (EDX) and
Thermogravimetric Analysis (TGA). The transition from oxide-onalloy
wires to hydrothermally synthesised uniformly zeolite coated
surfaces was followed using SEM and XRD. In addition, the
robustness of the prepared coating was confirmed by subjecting these
to thermal cycling (ambient to 550oC).
The cracking of n–heptane over the pellets and structured catalysts
for both ZSM–5 and Y zeolite showed very similar product
selectivities for similar amounts of catalyst with an apparent
activation energy of around 60 kJ mol-1. This paper demonstrates that
structured catalysts can be manufactured with excellent zeolite
adherence and when suitably activated/modified give comparable
cracking results to the pelleted powder forms. These structured
catalysts will improve temperature distribution in highly exothermic
and endothermic catalysed processes.
Abstract: Characteristics of MSM photodetector based on a porous In0.08Ga0.92N thin film were reported. Nanoporous structures of n-type In0.08Ga0.92N/AlN/Si thin films were synthesized by photoelectrochemical (PEC) etching at a ratio of 1:4 of HF:C2H5OH solution for 15min. The structural and optical properties of pre- and post-etched thin films were investigated. Field emission scanning electron microscope and atomic force microscope images showed that the pre-etched thin film has a sufficiently smooth surface over a large region and the roughness increased for porous film. Blue shift has been observed in photoluminescence emission peak at 300 K for porous sample. The photoluminescence intensity of the porous film indicated that the optical properties have been enhanced. A high work function metals (Pt and Ni) were deposited as a metal contact on the porous films. The rise and recovery times of the devices were investigated at 390nm chopped light. Finally, the sensitivity and quantum efficiency were also studied.
Abstract: Physical vapor deposition under conditions of an obliquely incident flux results in a film formation with an inclined columnar structure. These columns will be oriented toward the vapor source because of the self-shadowing effect, and they are homogenously distributed on the substrate surface because of the limited surface diffusion ability of ad-atoms when there is no additional substrate heating.
In this work, the oblique angle electron beam evaporation technique is used to fabricate thin films containing inclined nanorods. The results demonstrate that depending on the thin film composition, the morphology of the nanorods is changed as well. The galvanostatic analysis of these thin film anodes reveals that a composite CuSn nanorods having approximately 900mAhg-1 of initial discharge capacity, performs higher electrochemical performance compared to pure Sn nanorods containing anode material. The long cycle life and the advanced electrochemical properties of the nanostructured composite electrode might be attributed to its improved mechanical tolerance and enhanced electrical conductivity depending on the Cu presence in the nanorods.
Abstract: In this study we present the effect of elevated
temperatures from 300K to 400K on the electrical properties of
copper Phthalocyanine (CuPc) based organic field effect transistors
(OFET). Thin films of organic semiconductor CuPc (40nm) and
semitransparent Al (20nm) were deposited in sequence, by vacuum
evaporation on a glass substrate with previously deposited Ag source
and drain electrodes with a gap of 40 μm. Under resistive mode of
operation, where gate was suspended it was observed that drain
current of this organic field effect transistor (OFET) show an
increase with temperature. While in grounded gate condition metal
(aluminum) – semiconductor (Copper Phthalocyanine) Schottky
junction dominated the output characteristics and device showed
switching effect from low to high conduction states like Zener diode
at higher bias voltages. This threshold voltage for switching effect
has been found to be inversely proportional to temperature and shows
an abrupt decrease after knee temperature of 360K. Change in
dynamic resistance (Rd = dV/dI) with respect to temperature was
observed to be -1%/K.
Abstract: Single photon detectors have been fabricated NbN
nano wire. These detectors are fabricated from high quality, ultra
high vacuum sputtered NbN thin films on a sapphire substrate. In this
work a typical schematic of the nanowire Single Photon Detector
structure and then driving and measurement electronic circuit are
shown.
The response of superconducting nanowire single photon detectors
during a photo detection event, is modeled by a special electrical
circuits (two circuit).
Finally, current through the wire is calculated by solving
equations of models.
Abstract: Polymer-like organic thin films were deposited on both
aluminum alloy type 6061 and glass substrates at room temperature by
Plasma Enhanced Chemical Vapor Deposition (PECVD) methodusing
benzene and hexamethyldisiloxane (HMDSO) as precursor materials.
The surface and physical properties of plasma-polymerized organic
thin films were investigated at different r.f. powers. The effects of
benzene/argon ratio on the properties of plasma polymerized benzene
films were also investigated. It is found that using benzene alone
results in a non-coherent and non-adherent powdery deposited
material. The chemical structure and surface properties of the asgrown
plasma polymerized thin films were analyzed on glass
substrates with FTIR and contact angle measurements. FTIR spectra
of benzene deposited film indicated that the benzene rings are
preserved when increasing benzene ratio and/or decreasing r.f.
powers. FTIR spectra of HMDSO deposited films indicated an
increase of the hydrogen concentration and a decrease of the oxygen
concentration with the increase of r.f. power. The contact angle (θ) of
the films prepared from benzene was found to increase by about 43%
as benzene ratio increases from 10% to 20%. θ was then found to
decrease to the original value (51°) when the benzene ratio increases
to 100%. The contact angle, θ, for both benzene and HMDSO
deposited films were found to increase with r.f. power. This signifies
that the plasma polymerized organic films have substantially low
surface energy as the r.f power increases. The corrosion resistance of
aluminum alloy substrate both bare and covered with plasma
polymerized thin films was carried out by potentiodynamic
polarization measurements in standard 3.5 wt. % NaCl solution at
room temperature. The results indicate that the benzene and HMDSO
deposited films are suitable for protection of the aluminum substrate
against corrosion. The changes in the processing parameters seem to
have a strong influence on the film protective ability. Surface
roughness of films deposited on aluminum alloy substrate was
investigated using scanning electron microscopy (SEM). The SEM
images indicate that the surface roughness of benzene deposited films
increase with decreasing the benzene ratio. SEM images of benzene
and HMDSO deposited films indicate that the surface roughness
decreases with increasing r.f. power. Studying the above parameters
indicate that the films produced are suitable for specific practical
applications.
Abstract: This study fabricates p-type Ni1−xO:Li/n-Si heterojunction solar cells (P+/n HJSCs) by using radio frequency (RF) magnetron sputtering and investigates the effect of substrate temperature on photovoltaic cell properties. Grazing incidence x-ray diffraction, four point probe, and ultraviolet-visible-near infrared discover the optoelectrical properties of p-Ni1-xO thin films. The results show that p-Ni1-xO thin films deposited at 300 oC has the highest grain size (22.4 nm), average visible transmittance (~42%), and electrical resistivity (2.7 Ωcm). However, the conversion efficiency of cell is shown only 2.33% which is lower than the cell (3.39%) fabricated at room temperature. This result can be mainly attributed to interfacial layer thickness (SiOx) reduces from 2.35 nm to 1.70 nm, as verified by high-resolution transmission electron microscopy.
Abstract: Zinc oxide thin films with various microstructures
were grown on substrates by using HCOOH-sols. The reaction
mechanism of the sol system was investigated by performing an XPS
analysis of as-synthesized films, due to the products of hydrolysis
and condensation in the sol system contributing to the chemical state
of the as-synthesized films. The chemical structures of the assynthesized
films related to the microstructures of the final annealed
films were also studied. The results of the Zn 2p3/2, C 1s and O1s
XPS patterns indicate that the hydrolysis reaction in the sol system is
strongly influenced by the HCOOH agent. The results of XRD and
FE-SEM demonstrated the microstructures of the annealed films are
related to the content of hydrolyzed zinc hydrate (Zn-OH) species
present, and that content of the Zn-OH species in the sol system
increases the HCOOH adding, and these Zn-OH species existing in
the sol phase are responsible for large ZnO crystallites in the final
annealed films.
Abstract: The effect of chemical treatment in CdCl2 on the
compositional changes and defect structures of potentially useful ZnS
solar cell thin films prepared by vacuum deposition method was
studied using the complementary Rutherford backscattering (RBS)
and Thermoluminesence (TL) techniques. A series of electron and
hole traps are found in the various as deposited samples studied.
After treatment, perturbation on the intensity is noted; mobile defect
states and charge conversion and/or transfer between defect states are
found.
Abstract: Pyrite (FeS2) is a promising candidate for cathode
materials in batteries because of it`s high theoretical capacity, low
cost and non-toxicity. In this study, nano size iron disulfide thin film
was prepared on graphite substrate through a new method as battery
cathode. In this way, acetylene black and poly vinylidene fluoride
were used as electron conductor and binder, respectively. Fabricated
thin films were analyzed by XRD and SEM. These results and
electrochemical data confirm improvement of battery discharge
capacity in comparison with commercial type of pyrite.
Abstract: In this work we report on preliminary analysis of a novel optoelectronic gas sensor based on an optical fiber integrated with a tetrakis(4-sulfonatophenyl)porphyrin (TPPS) thin film. The sensitive materials are selectively deposited on the core region of a fiber tip by UV light induced deposition technique. A simple and cheap process which can be easily extended to different porphyrin derivatives. When the TPPS film on the fiber tip is exposed to acid and/or base vapors, dramatic changes occur in the aggregation structure of the dye molecules in the film, from J- to H-type, resulting in a profound modification of their corresponding reflectance spectra. From the achieved experimental results it is evident that the presence of intense and narrow band peaks in the reflected spectra could be monitored to detect hazardous vapors.
Abstract: Optical properties of sputter-deposited ZnS thin films
were investigated as potential replacements for CBD(chemical bath
deposition) CdS buffer layers in the application of CIGS solar cells.
ZnS thin films were fabricated on glass substrates at RT, 150oC, 200oC,
and 250oC with 50 sccm Ar gas using an RF magnetron sputtering
system. The crystal structure of the thin film is found to be zinc blende
(cubic) structure. Lattice parameter of ZnS is slightly larger than CdS
on the plane and thus better matched with that of CIGS. Within a
400-800 nm wavelength region, the average transmittance was larger
than 75%. When the deposition temperature of the thin film was
increased, the blue shift phenomenon was enhanced. Band gap energy
of the ZnS thin film tended to increase as the deposition temperature
increased. ZnS thin film is a promising material system for the CIGS
buffer layer, in terms of ease of processing, low cost, environmental
friendliness, higher transparency, and electrical properties
Abstract: The substrate heater designed for this investigation is a front side substrate heating system. It consists of 10 conventional tungsten halogen lamps and an aluminum reflector, total input electrical power of 5 kW. The substrate is heated by means of a radiation from conventional tungsten halogen lamps directed to the substrate through a glass window. This design allows easy replacement of the lamps and maintenance of the system. Within 2 to 6 minutes the substrate temperature reaches 500 to 830 C by varying the vertical distance between the glass window and the substrate holder. Moreover, the substrate temperature can be easily controlled by controlling the input power to the system. This design gives excellent opportunity to deposit many deferent films at deferent temperatures in the same deposition time. This substrate heater was successfully used for Chemical Vapor Deposition (CVD) of many thin films, such as Silicon, iron, etc.
Abstract: The ferroelectric behavior of barium strontium
titanate (BST) in thin film form has been investigated in order to
study the possibility of using BST for ferroelectric gate-field effect
transistor (FeFET) for memory devices application. BST thin films
have been fabricated as Al/BST/Pt/SiO2/Si-gate configuration. The
variation of the dielectric constant (ε) and tan δ with frequency have
been studied to ensure the dielectric quality of the material. The
results show that at low frequencies, ε increases as the Ba content
increases, whereas at high frequencies, it shows the opposite
variation, which is attributed to the dipole dynamics. tan δ shows low
values with a peak at the mid-frequency range. The ferroelectric
behavior of the Al/BST/Pt/SiO2/Si has been investigated using C-V
characteristics. The results show that the strength of the ferroelectric
hysteresis loop increases as the Ba content increases; this is attributed
to the grain size and dipole dynamics effect.
Abstract: ZnO-SnO2 i.e. Zinc-Tin-Oxide (ZTO) thin films were
deposited on glass substrate with varying concentrations (ZnO:SnO2
- 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash
evaporation technique. These deposited ZTO film were annealed at
450 0C in vacuum. These films were characterized to study the effect
of annealing on the structural, electrical, and optical properties.
Atomic force microscopy (AFM) and Scanning electron microscopy
(SEM) images manifest the surface morphology of these ZTO thin
films. The apparent growth of surface features revealed the formation
of nanostructure ZTO thin films. The small value of surface
roughness (root mean square RRMS) ensures the usefulness in
optical coatings. The sheet resistance was also found to be decreased
for both types of films with increasing concentration of SnO2. The
optical transmittance found to be decreased however blue shift has
been observed after annealing.
Abstract: In this paper, Zinc Oxide (ZnO) thin films are deposited on glass substrate by sol-gel method. The ZnO thin films with well defined orientation were acquired by spin coating of zinc acetate dehydrate monoethanolamine (MEA), de-ionized water and isopropanol alcohol. These films were pre-heated at 275°C for 10 min and then annealed at 350°C, 450°C and 550°C for 80 min. The effect of annealing temperature and different thickness on structure and surface morphology of the thin films were verified by Atomic Force Microscopy (AFM). It was found that there was a significant effect of annealing temperature on the structural parameters of the films such as roughness exponent, fractal dimension and interface width. Thin films also were characterizied by X-ray Diffractometery (XRD) method. XRD analysis revealed that the annealed ZnO thin films consist of single phase ZnO with wurtzite structure and show the c-axis grain orientation. Increasing annealing temperature increased the crystallite size and the c-axis orientation of the film after 450°C. Also In this study, ZnO thin films in different thickness have been prepared by sol-gel method on the glass substrate at room temperature. The thicknesses of films are 100, 150 and 250 nm. Using fractal analysis, morphological characteristics of surface films thickness in amorphous state were investigated. The results show that with increasing thickness, surface roughness (RMS) and lateral correlation length (ξ) are decreased. Also, the roughness exponent (α) and growth exponent (β) were determined to be 0.74±0.02 and 0.11±0.02, respectively.