Abstract: The microstructure and texture evolution of cryo rolled and annealed ductile TaHfNbZrTi refractory high entropy alloy was investigated. To obtain that, the alloy is severely cryo rolled and subsequently annealed for the recrystallization process. The cryo rolled – 90% shows the presence of very fine grains and microstructural heterogeneity. The cryo rolled samples are annealed at a temperature ranging from 800°C to 1400°C, the partial recrystallization is observed at 800°C annealed condition, and at higher annealing temperatures the complete recrystallization process is noticed. The development of ND fiber texture is observed after the annealing.
Abstract: The refractory alloys are crucial for high-temperature applications to improve performance and reduce cost. They are used in several applications such as aerospace, outer space, military and defense, nuclear powerplants, automobiles, and industry. The conventional refractory alloys show greater stability at high temperatures and in contrast they have operational limitations due to their low melting temperatures. However, there is a huge requirement to improve the refractory alloys’ operational temperatures and replace the conventional alloys. The newly emerging refractory high entropy alloys (RHEAs) could be alternative materials for conventional refractory alloys and fulfill the demands and requirements of various practical applications in the future. The RHEA TaHfNbZrTi was prepared through an arc melting process. The annealing behavior of severely deformed equiatomic RHEATaHfNbZrTi has been investigated. To obtain deformed condition, the alloy is cold-rolled to 90% thickness reduction and then subjected to an annealing process to observe recrystallization and microstructural evolution in the range of 800 °C to 1400 °C temperatures. The cold-rolled – 90% condition shows the presence of microstructural heterogeneity. The annealing microstructure of 800 °C temperature reveals that partial recrystallization and further annealing treatment carried out annealing treatment in the range of 850 °C to 1400 °C temperatures exhibits completely recrystallized microstructures, followed by coarsening with a degree of annealing temperature. The deformed and annealed conditions featured the development of body-centered cubic (BCC) fiber textures. The experimental investigation of heavy deformation and followed by high-temperature annealing up to 1400 °C temperature will contribute to the understanding of microstructure and texture evolution of emerging RHEAs.
Abstract: Alternative electrode materials for optoelectronic devices have been widely investigated in recent years. Since indium tin oxide (ITO) is the most preferred transparent conductive electrode, producing ITO films by simple and cost-effective solution-based techniques with enhanced optical and electrical properties has great importance. In this study, single- and multi-walled carbon nanotubes (SWCNT and MWCNT) incorporated into the ITO structure to increase electrical conductivity, mechanical strength, and chemical stability. Carbon nanotubes (CNTs) were firstly functionalized by acid treatment (HNO3:H2SO4), and the thermal resistance of CNTs after functionalization was determined by thermogravimetric analysis (TGA). Thin films were then prepared by spin coating technique and characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), four-point probe measurement system and UV-Vis spectrophotometer. The effects of process parameters were compared for ITO, MWCNT-ITO, and SWCNT-ITO films. Two factors including CNT concentration and annealing temperature were considered. The UV-Vis measurements demonstrated that the transmittance of ITO films was 83.58% at 550 nm, which was decreased depending on the concentration of CNT dopant. On the other hand, both CNT dopants provided an enhancement in the crystalline structure and electrical conductivity. Due to compatible diameter and better dispersibility of SWCNTs in the ITO solution, the best result in terms of electrical conductivity was obtained by SWCNT-ITO films with the 0.1 g/L SWCNT dopant concentration and heat-treatment at 550 °C for 1 hour.
Abstract: CuAlO2 thin films are prepared on Si or sapphire substrate by sol-gel method using two kinds of sols. One is combination of Cu acetate and Al acetate basic, and the other is Cu nitrate and Al nitrate. In the case of acetate sol, XRD peaks of CuAlO2 observed at annealing temperature of 800-950 ºC on both Si and sapphire substrates. In contrast, in the case of the films prepared using nitrate on Si substrate, XRD peaks of CuAlO2 have been observed only at the annealing temperature of 800-850 ºC. At annealing temperature of 850ºC, peaks of other species have been observed beside the CuAlO2 peaks, then, the CuAlO2 peaks disappeared at annealing temperature of 900 °C with increasing in intensity of the other peaks. Intensity of the other peaks decreased at annealing temperature of 950 ºC with appearance of broad SiO2 peak. In the present, we ascribe these peaks as metal silicide.
Abstract: The nanoindentation behaviour and phase
transformation of annealed single-crystal silicon wafers are examined.
The silicon specimens are annealed at temperatures of 250, 350 and
450ºC, respectively, for 15 minutes and are then indented to maximum
loads of 30, 50 and 70 mN. The phase changes induced in the indented
specimens are observed using transmission electron microscopy
(TEM) and micro-Raman scattering spectroscopy (RSS). For all
annealing temperatures, an elbow feature is observed in the unloading
curve following indentation to a maximum load of 30 mN. Under
higher loads of 50 mN and 70 mN, respectively, the elbow feature is
replaced by a pop-out event. The elbow feature reveals a complete
amorphous phase transformation within the indented zone, whereas
the pop-out event indicates the formation of Si XII and Si III phases.
The experimental results show that the formation of these crystalline
silicon phases increases with an increasing annealing temperature and
indentation load. The hardness and Young’s modulus both decrease as
the annealing temperature and indentation load are increased.
Abstract: In this study, the Mo-electrode thin films were deposited using two-stepped process and the high purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by using hydrothermal process by Nanowin Technology Co. Ltd. Because the CIS powder was aggregated into microscale particles, the CIS power was ground into nano-scale particles. 6 wt% CIS particles were mixed and dispersed into isopropyl alcohol (IPA). A new non-vacuum thin-film deposition process, spray coating method (SPM), was investigated to deposit the high-densified CIS absorber layers. 0.1 ml CIS solution was sprayed on the 20 mm×10 mm Mo/glass substrates and then the CuInSe2 thin films were annealed in a selenization furnace using N2 as atmosphere. The annealing temperature and time were set at 550oC and 5 min, and 0.0g~0.6g extra Se content was added in the furnace. The influences of extra Se content on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.
Abstract: Spheroidization heat treatment was conducted on the SK85 high carbon steel sheets with various initial microstructures obtained after cold rolling by various reduction ratios at a couple of annealing temperatures. On the high carbon steel sheet with fine pearlite microstructure, obtained by soaking at 800oC for 2hr in a box furnace and then annealing at 570oC for 5min in a salt bath furnace followed by water quenching, cold rolling was conducted by reduction ratios of 20, 30, and 40%. Heat treatment for spheroidization was carried out at 600 and 720oC for the various time intervals from 0.1 to 32 hrs. Area fraction of spheroidized cementite was measured with an image analyzer as a function of cold reduction ratios and duration times. Tensile tests were carried out at room temperature on the spheoidized high carbon steel.
Abstract: This study describes a micro device integrated with
multi-chamber for polymerase chain reaction (PCR) with different
annealing temperatures. The device consists of the reaction
polydimethylsiloxane (PDMS) chip, a cover glass chip, and is
equipped with cartridge heaters, fans, and thermocouples for
temperature control. In this prototype, commercial software is utilized
to determine the geometric and operational parameters those are
responsible for creating the denaturation, annealing, and extension
temperatures within the chip. Two cartridge heaters are placed at two
sides of the chip and maintained at two different temperatures to
achieve a thermal gradient on the chip during the annealing step. The
temperatures on the chip surface are measured via an infrared imager.
Some thermocouples inserted into the reaction chambers are used to
obtain the transient temperature profiles of the reaction chambers
during several thermal cycles. The experimental temperatures
compared to the simulated results show a similar trend. This work
should be interesting to persons involved in the high-temperature
based reactions and genomics or cell analysis.
Abstract: The aim of the present work is to study the effect of annealing on the vibration damping capacity of high-chromium (16%) ferromagnetic steel. The alloys were prepared from raw materials of 99.9% purity melted in a high frequency induction furnace under high vacuum. The samples were heat-treated in vacuum at various temperatures (800 to 1200ºC) for 1 hour followed by slow cooling (120ºC/h). The inverted torsional pendulum method was used to evaluate the vibration damping capacity. The results indicated that the vibration damping capacity of the alloys is influenced by annealing and there exists a critical annealing temperature after 1000ºC. The damping capacity increases quickly below the critical temperature since the magnetic domains move more easily.
Abstract: The electrical and structural properties of Hf/Al/Ni/Au
(20/100/25/50 nm) ohmic contact to n-GaN are reported in this study.
Specific contact resistivities of Hf/Al/Ni/Au based contacts have been
investigated as a function of annealing temperature and achieve the
lowest value of 1.09´10-6 Ω·cm2 after annealing at 650 oC in vacuum.
A detailed mechanism of ohmic contact formation is discussed. By
using different chemical analyses, it is anticipated that the formation of
Hf-Al-N alloy might be responsible to form low temperature ohmic
contacts for the Hf-based scheme to n-GaN.
Abstract: In the present work homogeneous silica film on
silicon was fabricated by colloidal silica sol. The silica sol precursor
with uniformly granular particle was derived by the alkaline
hydrolysis of tetraethoxyorthosilicate (TEOS) in presence of glycerol
template. The film was prepared by dip coating process. The
templated hetero-structured silica film was annealed at elevated
temperatures to generate nano- and meso porosity in the film. The
film was subsequently annealed at different temperatures to make it
defect free and abrasion resistant. The sol and the film were
characterized by the measurement of particle size distribution,
scanning electron microscopy, XRD, FTIR spectroscopy,
transmission electron microscopy, atomic force microscopy,
measurement of the refractive index, thermal conductivity and
abrasion resistance. The porosity of the films decreased whereas
refractive index and dielectric constant of it `increased with the
increase in the annealing temperature. The thermal conductivity of
the films increased with the increase in the film thickness. The
developed porous silica film holds strong potential for use in
different areas.
Abstract: In this paper, Zinc Oxide (ZnO) thin films are deposited on glass substrate by sol-gel method. The ZnO thin films with well defined orientation were acquired by spin coating of zinc acetate dehydrate monoethanolamine (MEA), de-ionized water and isopropanol alcohol. These films were pre-heated at 275°C for 10 min and then annealed at 350°C, 450°C and 550°C for 80 min. The effect of annealing temperature and different thickness on structure and surface morphology of the thin films were verified by Atomic Force Microscopy (AFM). It was found that there was a significant effect of annealing temperature on the structural parameters of the films such as roughness exponent, fractal dimension and interface width. Thin films also were characterizied by X-ray Diffractometery (XRD) method. XRD analysis revealed that the annealed ZnO thin films consist of single phase ZnO with wurtzite structure and show the c-axis grain orientation. Increasing annealing temperature increased the crystallite size and the c-axis orientation of the film after 450°C. Also In this study, ZnO thin films in different thickness have been prepared by sol-gel method on the glass substrate at room temperature. The thicknesses of films are 100, 150 and 250 nm. Using fractal analysis, morphological characteristics of surface films thickness in amorphous state were investigated. The results show that with increasing thickness, surface roughness (RMS) and lateral correlation length (ξ) are decreased. Also, the roughness exponent (α) and growth exponent (β) were determined to be 0.74±0.02 and 0.11±0.02, respectively.
Abstract: In this investigation, anatase TiO2 thin films were
grown by radio frequency magnetron sputtering on glass substrates at
a high sputtering pressure and room temperature. The anatase films
were then annealed at 300-600 °C in air for a period of 1 hour. To
examine the structure and morphology of the films, X-ray diffraction
(XRD) and atomic force microscopy (AFM) methods were used
respectively. From X-ray diffraction patterns of the TiO2 films, it was
found that the as-deposited film showed some differences compared
with the annealed films and the intensities of the peaks of the
crystalline phase increased with the increase of annealing
temperature. From AFM images, the distinct variations in the
morphology of the thin films were also observed. The optical
constants were characterized using the transmission spectra of the
films obtained by UV-VIS-IR spectrophotometer. Besides, optical
thickness of the film deposited at room temperature was calculated
and cross-checked by taking a cross-sectional image through SEM.
The optical band gaps were evaluated through Tauc model. It was
observed that TiO2 films produced at room temperatures exhibited
high visible transmittance and transmittance decreased slightly with
the increase of annealing temperatures. The films were found to be
crystalline having anatase phase. The refractive index of the films
was found from 2.31-2.35 in the visible range. The extinction
coefficient was nearly zero in the visible range and was found to
increase with annealing temperature. The allowed indirect optical
band gap of the films was estimated to be in the range from 3.39 to
3.42 eV which showed a small variation. The allowed direct band
gap was found to increase from 3.67 to 3.72 eV. The porosity was
also found to decrease at a higher annealing temperature making the
film compact and dense.
Abstract: The aim of our work is to study phase composition,
particle size and magnetic response of Fe2O3/TiO2 nanocomposites
with respect to the final annealing temperature. Those nanomaterials
are considered as smart catalysts, separable from a liquid/gaseous
phase by applied magnetic field. The starting product was obtained
by an ecologically acceptable route, based on heterogeneous
precipitation of the TiO2 on modified g-Fe2O3 nanocrystals dispersed
in water. The precursor was subsequently annealed on air at
temperatures ranging from 200 oC to 900 oC. The samples were
investigated by synchrotron X-ray powder diffraction (S-PXRD),
magnetic measurements and Mössbauer spectroscopy. As evidenced
by S-PXRD and Mössbauer spectroscopy, increasing the annealing
temperature causes evolution of the phase composition from
anatase/maghemite to rutile/hematite, finally above 700 oC the
pseudobrookite (Fe2TiO5) also forms. The apparent particle size of
the various Fe2O3/TiO2 phases has been determined from the highquality
S-PXRD data by using two different approaches: the Rietveld
refinement and the Debye method. Magnetic response of the samples
is discussed in considering the phase composition and the particle
size.