Preparation of CuAlO2 Thin Films on Si or Sapphire Substrate by Sol-Gel Method Using Metal Acetate or Nitrate

CuAlO2 thin films are prepared on Si or sapphire substrate by sol-gel method using two kinds of sols. One is combination of Cu acetate and Al acetate basic, and the other is Cu nitrate and Al nitrate. In the case of acetate sol, XRD peaks of CuAlO2 observed at annealing temperature of 800-950 ºC on both Si and sapphire substrates. In contrast, in the case of the films prepared using nitrate on Si substrate, XRD peaks of CuAlO2 have been observed only at the annealing temperature of 800-850 ºC. At annealing temperature of 850ºC, peaks of other species have been observed beside the CuAlO2 peaks, then, the CuAlO2 peaks disappeared at annealing temperature of 900 °C with increasing in intensity of the other peaks. Intensity of the other peaks decreased at annealing temperature of 950 ºC with appearance of broad SiO2 peak. In the present, we ascribe these peaks as metal silicide.

Work Function Engineering of Functionally Graded ZnO+Ga2O3 Thin Film for Solar Cell and Organic Light Emitting Diodes Applications

ZnO+Ga2O3 functionally graded thin films (FGTFs) were examined for their potential use as Solar cell and organic light emitting diodes (OLEDs). FGTF transparent conducting oxides (TCO) were fabricated by combinatorial RF magnetron sputtering. The composition gradient was controlled up to 10% by changing the plasma power of the two sputter guns. A Ga2O3+ZnO graded region was placed on the top layer of ZnO. The FGTFs showed up to 80% transmittance. Their surface resistances were reduced to < 10% by increasing the Ga2O3: pure ZnO ratio in the TCO. The FGTFs- work functions could be controlled within a range of 0.18 eV. The controlled work function is a very promising technology because it reduces the contact resistance between the anode and Hall transport layers of OLED and solar cell devices.