Abstract: The electrical and structural properties of Hf/Al/Ni/Au
(20/100/25/50 nm) ohmic contact to n-GaN are reported in this study.
Specific contact resistivities of Hf/Al/Ni/Au based contacts have been
investigated as a function of annealing temperature and achieve the
lowest value of 1.09´10-6 Ω·cm2 after annealing at 650 oC in vacuum.
A detailed mechanism of ohmic contact formation is discussed. By
using different chemical analyses, it is anticipated that the formation of
Hf-Al-N alloy might be responsible to form low temperature ohmic
contacts for the Hf-based scheme to n-GaN.
Abstract: Un-doped GaN film of thickness 1.90 mm, grown on
sapphire substrate were uniformly implanted with 325 keV Mn+ ions
for various fluences varying from 1.75 x 1015 - 2.0 x 1016 ions cm-2 at
3500 C substrate temperature. The structural, morphological and
magnetic properties of Mn ion implanted gallium nitride samples
were studied using XRD, AFM and SQUID techniques. XRD of the
sample implanted with various ion fluences showed the presence of
different magnetic phases of Ga3Mn, Ga0.6Mn0.4 and Mn4N.
However, the compositions of these phases were found to be
depended on the ion fluence. AFM images of non-implanted sample
showed micrograph with rms surface roughness 2.17 nm. Whereas
samples implanted with the various fluences showed the presence of
nano clusters on the surface of GaN. The shape, size and density of
the clusters were found to vary with respect to ion fluence. Magnetic
moment versus applied field curves of the samples implanted with
various fluences exhibit the hysteresis loops. The Curie temperature
estimated from zero field cooled and field cooled curves for the
samples implanted with the fluence of 1.75 x 1015, 1.5 x 1016 and 2.0
x 1016 ions cm-2 was found to be 309 K, 342 K and 350 K
respectively.
Abstract: Due to the high increase in and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amplifiers. Classes-A, B, C, D, E and F are the main techniques for realizing power amplifiers.
An implementation of high efficiency class-F power amplifier with Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) was realized in this paper. The simulation and optimization of the class-F power amplifier circuit model was undertaken using Agilent’s Advanced Design system (ADS). The circuit was designed using lumped elements.