Synthesis and Fluorescence Spectroscopy of Sulphonic Acid-Doped Polyaniline When Exposed to Oxygen Gas

Three sulphonic acid-doped polyanilines were synthesized through chemical oxidation at low temperature (0-5 oC) and potential of these polymers as sensing agent for O2 gas detection in terms of fluorescence quenching was studied. Sulphuric acid, dodecylbenzene sulphonic acid (DBSA) and camphor sulphonic acid (CSA) were used as doping agents. All polymers obtained were dark green powder. Polymers obtained were characterized by Fourier transform infrared spectroscopy, ultraviolet-visible absorption spectroscopy, thermogravimetry analysis, elemental analysis, differential scanning calorimeter and gel permeation chromatography. Characterizations carried out showed that polymers were successfully synthesized with mass recovery for sulphuric aciddoped polyaniline (SPAN), DBSA-doped polyaniline (DBSA-doped PANI) and CSA-doped polyaniline (CSA-doped PANI) of 71.40%, 75.00% and 39.96%, respectively. Doping level of SPAN, DBSAdoped PANI and CSA-doped PANI were 32.86%, 33.13% and 53.96%, respectively as determined based on elemental analysis. Sensing test was carried out on polymer sample in the form of solution and film by using fluorescence spectrophotometer. Samples of polymer solution and polymer film showed positive response towards O2 exposure. All polymer solutions and films were fully regenerated by using N2 gas within 1 hour period. Photostability study showed that all samples of polymer solutions and films were stable towards light when continuously exposed to xenon lamp for 9 hours. The relative standard deviation (RSD) values for SPAN solution, DBSA-doped PANI solution and CSA-doped PANI solution for repeatability were 0.23%, 0.64% and 0.76%, respectively. Meanwhile RSD values for reproducibility were 2.36%, 6.98% and 1.27%, respectively. Results for SPAN film, DBSAdoped PANI film and CSA-doped PANI film showed the same pattern with RSD values for repeatability of 0.52%, 4.05% and 0.90%, respectively. Meanwhile RSD values for reproducibility were 2.91%, 10.05% and 7.42%, respectively. The study on effect of the flow rate on response time was carried out using 3 different rates which were 0.25 mL/s, 1.00 mL/s and 2.00 mL/s. Results obtained showed that the higher the flow rate, the shorter the response time.

A Hybrid Differential Transform Approach for Laser Heating of a Double-Layered Thin Film

This paper adopted the hybrid differential transform approach for studying heat transfer problems in a gold/chromium thin film with an ultra-short-pulsed laser beam projecting on the gold side. The physical system, formulated based on the hyperbolic two-step heat transfer model, covers three characteristics: (i) coupling effects between the electron/lattice systems, (ii) thermal wave propagation in metals, and (iii) radiation effects along the interface. The differential transform method is used to transfer the governing equations in the time domain into the spectrum equations, which is further discretized in the space domain by the finite difference method. The results, obtained through a recursive process, show that the electron temperature in the gold film can rise up to several thousand degrees before its electron/lattice systems reach equilibrium at only several hundred degrees. The electron and lattice temperatures in the chromium film are much lower than those in the gold film.

Current Density Effect on Nickel Electroplating Using Post Supercritical CO2 Mixed Watts Electrolyte

In this study, a nickel film with nano-crystalline grains, high hardness and smooth surface was electrodeposited using a post supercritical carbon dioxide (CO2) mixed Watts electrolyte. Although the hardness was not as high as its Sc-CO2 counterpart, the thin coating contained significantly less number of nano-sized pinholes. By measuring the escape concentration of the dissolved CO2 in post Sc-CO2 mixed electrolyte with the elapsed time, it was believed that the residue of dissolved CO2 bubbles should closely relate to the improvement in hardness and surface roughness over its conventional plating counterpart. Therefore, shortening the duration of electroplating with the raise of current density up to 0.5 A/cm2 could effectively retain more post Sc-CO2 mixing effect. This study not only confirms the roles of dissolved CO2 bubbles in electrolyte but also provides a potential process to overcome most issues associated with the cost in building high-pressure chamber for large size products and continuous plating using supercritical method.

Investigation into Heterotrophic Activities and Algal Biomass in Surface Flow Stormwater Wetlands

Stormwater wetlands have been mainly designed in an empirical approach for water quality improvement, with little quantitative understanding of the internal microbial processes. This study investigated into heterotrophic bacterial production rate, heterotrophic bacterial mineralization percentage, and algal biomass in hypertrophic and eutrophic surface flow stormwater wetlands. Compared to a nearby wood leachate treatment wetland, the stormwater wetlands had much higher chlorophyll-a concentrations. The eutrophic stormwater wetland had improved water quality, whereas the hypertrophic stormwater wetland had degraded water quality. Heterotrophic bacterial activities in water were limited in the stormwater wetlands due to competition of algal growth for nutrients. The relative contribution of biofilms to the overall heterotrophic activities was higher in the stormwater wetlands than that in the wood leachate treatment wetland.

Ovshinsky Effect by Quantum Mechanics

Ovshinsky initiated scientific research in the field of amorphous and disordered materials that continues to this day. The Ovshinsky Effect where the resistance of thin GST films is significantly reduced upon the application of low voltage is of fundamental importance in phase-change - random access memory (PC-RAM) devices.GST stands for GdSbTe chalcogenide type glasses.However, the Ovshinsky Effect is not without controversy. Ovshinsky thought the resistance of GST films is reduced by the redistribution of charge carriers; whereas, others at that time including many PC-RAM researchers today argue that the GST resistance changes because the GST amorphous state is transformed to the crystalline state by melting, the heat supplied by external heaters. In this controversy, quantum mechanics (QM) asserts the heat capacity of GST films vanishes, and therefore melting cannot occur as the heat supplied cannot be conserved by an increase in GST film temperature.By precluding melting, QM re-opens the controversy between the melting and charge carrier mechanisms. Supporting analysis is presented to show that instead of increasing GST film temperature, conservation proceeds by the QED induced creation of photons within the GST film, the QED photons confined by TIR. QED stands for quantum electrodynamics and TIR for total internal reflection. The TIR confinement of QED photons is enhanced by the fact the absorbedheat energy absorbed in the GST film is concentrated in the TIR mode because of their high surface to volume ratio. The QED photons having Planck energy beyond the ultraviolet produce excitons by the photoelectric effect, the electrons and holes of which reduce the GST film resistance.

Physical and Electrical Characterization of ZnO Thin Films Prepared by Sol-Gel Method

In this paper, Zinc Oxide (ZnO) thin films are deposited on glass substrate by sol-gel method. The ZnO thin films with well defined orientation were acquired by spin coating of zinc acetate dehydrate monoethanolamine (MEA), de-ionized water and isopropanol alcohol. These films were pre-heated at 275°C for 10 min and then annealed at 350°C, 450°C and 550°C for 80 min. The effect of annealing temperature and different thickness on structure and surface morphology of the thin films were verified by Atomic Force Microscopy (AFM). It was found that there was a significant effect of annealing temperature on the structural parameters of the films such as roughness exponent, fractal dimension and interface width. Thin films also were characterizied by X-ray Diffractometery (XRD) method. XRD analysis revealed that the annealed ZnO thin films consist of single phase ZnO with wurtzite structure and show the c-axis grain orientation. Increasing annealing temperature increased the crystallite size and the c-axis orientation of the film after 450°C. Also In this study, ZnO thin films in different thickness have been prepared by sol-gel method on the glass substrate at room temperature. The thicknesses of films are 100, 150 and 250 nm. Using fractal analysis, morphological characteristics of surface films thickness in amorphous state were investigated. The results show that with increasing thickness, surface roughness (RMS) and lateral correlation length (ξ) are decreased. Also, the roughness exponent (α) and growth exponent (β) were determined to be 0.74±0.02 and 0.11±0.02, respectively.

Deposition Rate and Energy Enhancements of TiN Thin-Film in a Magnetized Sheet Plasma Source

Titanium nitride (TiN) has been synthesized using the sheet plasma negative ion source (SPNIS). The parameters used for its effective synthesis has been determined from previous experiments and studies. In this study, further enhancement of the deposition rate of TiN synthesis and advancement of the SPNIS operation is presented. This is primarily achieved by the addition of Sm-Co permanent magnets and a modification of the configuration in the TiN deposition process. The magnetic enhancement is aimed at optimizing the sputtering rate and the sputtering yield of the process. The Sm-Co permanent magnets are placed below the Ti target for better sputtering by argon. The Ti target is biased from –250V to – 350V and is sputtered by Ar plasma produced at discharge current of 2.5–4A and discharge potential of 60–90V. Steel substrates of dimensions 20x20x0.5mm3 were prepared with N2:Ar volumetric ratios of 1:3, 1:5 and 1:10. Ocular inspection of samples exhibit bright gold color associated with TiN. XRD characterization confirmed the effective TiN synthesis as all samples exhibit the (200) and (311) peaks of TiN and the non-stoichiometric Ti2N (220) facet. Cross-sectional SEM results showed increase in the TiN deposition rate of up to 0.35μm/min. This doubles what was previously obtained [1]. Scanning electron micrograph results give a comparative morphological picture of the samples. Vickers hardness results gave the largest hardness value of 21.094GPa.

Resistive Switching in TaN/AlNx/TiN Cell

Resistive switching of aluminum nitride (AlNx) thin film was demonstrated in a TaN/AlNx/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), RHRS/RLRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlNx/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlNx film.

Design an Electrical Nose with ZnO Nanowire Arrays

Vertical ZnO nanowire array films were synthesized based on aqueous method for sensing applications. ZnO nanowires were investigated structurally using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The gas-sensing properties of ZnO nanowires array films are studied. It is found that the ZnO nanowires array film sensor exhibits excellent sensing properties towards O2 and CO2 at 100 °C with the response time shorter than 5 s. High surface area / volume ratio of vertical ZnO nanowire and high mobility accounts for the fast response and recovery. The sensor response was measured in the range from 100 to 500 ppm O2 and CO2 in this study.

Size Dependence of 1D Superconductivity in NbN Nanowires on Suspended Carbon Nanotubes

We report the size dependence of 1D superconductivity in ultrathin (10-130 nm) nanowires produced by coating suspended carbon nanotubes with a superconducting NbN thin film. The resistance-temperature characteristic curves for samples with ≧25 nm wire width show the superconducting transition. On the other hand, for the samples with 10-nm width, the superconducting transition is not exhibited owing to the quantum size effect. The differential resistance vs. current density characteristic curves show some peak, indicating that Josephson junctions are formed in nanowires. The presence of the Josephson junctions is well explained by the measurement of the magnetic field dependence of the critical current. These understanding allow for the further expansion of the potential application of NbN, which is utilized for single photon detectors and so on.

Some Aspects Regarding I. R. Absorbing Materials Based On Thin Alumina Films for Solar-Thermal Energy Conversion, Using X-Ray Diffraction Technique

Solar energy is the most “available", ecological and clean energy. This energy can be used in active or passive mode. The active mode implies the transformation of solar energy into a useful energy. The solar energy can be transformed into thermal energy, using solar collectors. In these collectors, the active and the most important element is the absorber, material which performs the absorption of solar radiation and, in at the same time, limits its reflection. The paper presents some aspects regarding the IR absorbing material – a type of cermets, used as absorber in the solar collectors, by X Ray Diffraction Technique (XRD) characterization.

FILMS based ANC System – Evaluation and Practical Implementation

This paper describes the implementation and testing of a multichannel active noise control system (ANCS) based on the filtered-inverse LMS (FILMS) algorithm. The FILMS algorithm is derived from the well-known filtered-x LMS (FXLMS) algorithm with the aim to improve the rate of convergence of the multichannel FXLMS algorithm and to reduce its computational load. Laboratory setup and techniques used to implement this system efficiently are described in this paper. Experiments performed in order to test the performance of the FILMS algorithm are discussed and the obtained results presented.

Investigation of 5,10,15,20-Tetrakis(3-,5--Di-Tert-Butylphenyl)Porphyrinatocopper(II) for Electronics Applications

In this work, an organic compound 5,10,15,20- Tetrakis(3,5-di-tertbutylphenyl)porphyrinatocopper(II) (TDTBPPCu) is studied as an active material for thin film electronic devices. To investigate the electrical properties of TDTBPPCu, junction of TDTBPPCu with heavily doped n-Si and Al is fabricated. TDTBPPCu film was sandwiched between Al and n-Si electrodes. Various electrical parameters of TDTBPPCu are determined. The current-voltage characteristics of the junction are nonlinear, asymmetric and show rectification behavior, which gives the clue of formation of depletion region. This behavior indicates the potential of TDTBPPCu for electronics applications. The current-voltage and capacitance-voltage techniques are used to find the different electronic parameters.

A Study on Dogme 95 in the Korean Films

Many new experimental films which were free from conventional movie forms have appeared since Nubellbak Movement in the late 1950s. Forty years after the movement started, on March 13th, 1995, on the 100th anniversary of the birth of film, the declaration called Dogme 95, was issued in Copenhagen, Denmark. It aimed to create a new style of avant-garde film, and showed a tendency toward being anti-Hollywood and anti-genre, which were against the highly popular Hollywood trend of movies based on large-scale investment. The main idea of Dogme 95 is the opposition to 'the writer's doctrine' that a film should be the artist's individual work and to 'the overuse of technology' in film. The key figures declared ten principles called 'Vow of Chastity', by which new movie forms were to be produced. Interview (2000), directed by Byunhyuk, was made in 2000, five years after Dogme 95 was declared. This movie was dedicated as the first Asian Dogme. This study will survey the relationship between Korean film and the Vow of Chastity through the Korean films released in theaters from a viewpoint of technology and content. It also will call attention to its effects on and significance to Korean film in modern society.

Correlation of Microstructure and Corrosion Behavior of Martensitic Stainless Steel Surgical Grade AISI 420A Exposed to 980-1035oC

Martensitic stainless steels have been extensively used for their good corrosion resistance and better mechanical properties. Heat treatment was suggested as one of the most excellent ways to this regard; hence, it affects the microstructure, mechanical and corrosion properties of the steel. In the current research work the microstructural changes and corrosion behavior in an AISI 420A stainless steel exposed to temperatures in the 980-1035oC range were investigated. The heat treatment is carried out in vacuum furnace within the said temperature range. The quenching of the samples was carried out in oil, brine and water media. The formation and stability of passive film was studied by Open Circuit Potential, Potentiodynamic polarization and Electrochemical Scratch Tests. The Electrochemical Impedance Spectroscopy results simulated with Equivalent Electrical Circuit suggested bilayer structure of outer porous and inner barrier oxide films. The quantitative data showed thick inner barrier oxide film retarded electrochemical reactions. Micrographs of the quenched samples showed sigma and chromium carbide phases which prove the corrosion resistance of steel alloy.

C-V Characterization and Analysis of Temperature and Channel Thickness Effects on Threshold Voltage of Ultra-thin SOI MOSFET by Self-Consistent Model

The threshold voltage and capacitance voltage characteristics of ultra-thin Silicon-on-Insulator MOSFET are greatly influenced by the thickness and doping concentration of the silicon film. In this work, the capacitance voltage characteristics and threshold voltage of the device have been analyzed with quantum mechanical effects using the Self-Consistent model. Reduction of channel thickness and adding doping impurities cause an increase in the threshold voltage. Moreover, the temperature effects cause a significant amount of threshold voltage shift. The temperature dependence of threshold voltage has also been observed with Self- Consistent approach which are well supported from experimental performance of practical devices.

Hydrogen Sulphide Removal Using a Novel Biofilter Media

Air emissions from waste treatment plants often consist of a combination of Volatile Organic Compounds (VOCs) and odors. Hydrogen sulfide is one of the major odorous gases present in the waste emissions coming from municipal wastewater treatment facilities. Hydrogen sulfide (H2S) is odorous, highly toxic and flammable. Exposure to lower concentrations can result in eye irritation, a sore throat and cough, shortness of breath, and fluid in the lungs. Biofiltration has become a widely accepted technology for treating air streams containing H2S. When compared with other nonbiological technologies, biofilter is more cost-effective for treating large volumes of air containing low concentrations of biodegradable compounds. Optimization of biofilter media is essential for many reasons such as: providing a higher surface area for biofilm growth, low pressure drop, physical stability, and good moisture retention. In this work, a novel biofilter media is developed and tested at a pumping station of a municipality located in the United Arab Emirates (UAE). The media is found to be very effective (>99%) in removing H2S concentrations that are expected in pumping stations under steady state and shock loading conditions.

Uniformity of Dose Distribution in Radiation Fields Surrounding the Spine using Film Dosimetry and Comparison with 3D Treatment Planning Software

The overall penumbra is usually defined as the distance, p20–80, separating the 20% and 80% of the dose on the beam axis at the depth of interest. This overall penumbra accounts also for the fact that some photons emitted by the distal parts of the source are only partially attenuated by the collimator. Medulloblastoma is the most common type of childhood brain tumor and often spreads to the spine. Current guidelines call for surgery to remove as much of the tumor as possible, followed by radiation of the brain and spinal cord, and finally treatment with chemotherapy. The purpose of this paper was to present results on an Uniformity of dose distribution in radiation fields surrounding the spine using film dosimetry and comparison with 3D treatment planning software.

The Cinema in Turkey During 1940s

The cinema in Turkey during the 1940s was shaped under the Second World War conditions. The amateur film makers from different socioeconomic roots experienced movie production in those years. Having similar socioeconomic characteristics and autobiographies, each of them has a different understanding of cinema. Nevertheless, they joined in making movies which address native culture and audience. They narrated indigenous stories with native music, amateur players and simple settings. Although the martial law, censorship and economical deficiencies, they started to produce films in the Second World War. The cinematographers of the 1940s usually called as thetransition period cinematographers in Turkey, producing in the passage between the period of thetheatre playersand the period of thenational cinema. But, 1940- 1950 period of Turkish cinema should be defined not as a transition but a period of forming the professional conscioussness in cinema.

Fabrication and Characterization of Poly-Si Vertical Nanowire Thin Film Transistor

In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.