Abstract: The miniaturization of circuits is advancing. During chip manufacturing, structures are filled for example by metal organic chemical vapor deposition (MOCVD). Since this process reaches its limits in case of very high aspect ratios, the use of alternatives such as the atomic layer deposition (ALD) is possible, requiring the extension of existing coating systems. However, it is an unsolved question to what extent MOCVD can achieve results similar as an ALD process. In this context, this work addresses the characterization of a metal organic vapor deposition of titanium nitride. Based on the current state of the art, the film properties coating thickness, sheet resistance, resistivity, stress and chemical composition are considered. The used setting parameters are temperature, plasma gas ratio, plasma power, plasma treatment time, deposition time, deposition pressure, number of cycles and TDMAT flow. The derived process instructions for unstructured wafers and inside a structure with high aspect ratio include lowering the process temperature and increasing the number of cycles, the deposition and the plasma treatment time as well as the plasma gas ratio of hydrogen to nitrogen (H2:N2). In contrast to the current process configuration, the deposited titanium nitride (TiN) layer is more uniform inside the entire test structure. Consequently, this paper provides approaches to employ the MOCVD for structures with increasing aspect ratios.
Abstract: Titanium nitride (TiN) has been synthesized using the
sheet plasma negative ion source (SPNIS). The parameters used for
its effective synthesis has been determined from previous
experiments and studies. In this study, further enhancement of the
deposition rate of TiN synthesis and advancement of the SPNIS
operation is presented. This is primarily achieved by the addition of
Sm-Co permanent magnets and a modification of the configuration in
the TiN deposition process. The magnetic enhancement is aimed at
optimizing the sputtering rate and the sputtering yield of the process.
The Sm-Co permanent magnets are placed below the Ti target for
better sputtering by argon. The Ti target is biased from –250V to –
350V and is sputtered by Ar plasma produced at discharge current of
2.5–4A and discharge potential of 60–90V. Steel substrates of
dimensions 20x20x0.5mm3 were prepared with N2:Ar volumetric
ratios of 1:3, 1:5 and 1:10. Ocular inspection of samples exhibit
bright gold color associated with TiN. XRD characterization
confirmed the effective TiN synthesis as all samples exhibit the (200)
and (311) peaks of TiN and the non-stoichiometric Ti2N (220) facet.
Cross-sectional SEM results showed increase in the TiN deposition
rate of up to 0.35μm/min. This doubles what was previously obtained
[1]. Scanning electron micrograph results give a comparative
morphological picture of the samples. Vickers hardness results gave
the largest hardness value of 21.094GPa.