Abstract: This research aims at obtaining the equations of pulse propagation in nonlinear plasmonic waveguides created with As2S3 chalcogenide materials. Via utilizing Helmholtz equation and first-order perturbation theory, two components of electric field are determined within frequency domain. Afterwards, the equations are formulated in time domain. The obtained equations include two coupled differential equations that considers nonlinear dispersion.
Abstract: Transition metal dichalcogenides have potential applications in power generation devices that convert waste heat into electric current by the so-called Seebeck and Hall effects thus providing an alternative energy technology to reduce the dependence on traditional fossil fuels. In this study, the thermoelectric properties of 1T and 2HTaX2 (X= S or Se) dichalcogenide superconductors have been computed using the semi-classical Boltzmann theory. Technologically, the task is to fabricate suitable materials with high efficiency. It is found that 2HTaS2 possesses the largest value of figure of merit ZT= 1.27 at 175 K. From a scientific point of view, we aim to model the underlying materials properties and in particular the transport phenomena as mediated by electrons and lattice vibrations responsible for superconductivity, Charge Density Waves (CDW) and metal/insulator transitions as function of temperature. The goal of the present work is to develop an understanding of the superconductivity of these selected materials using the transport properties at the fundamental level.
Abstract: In this work, the effect of the magnetron sputtering system parameters on the optical properties of the Mn doped GeTe were investigated. The optical properties of the Ge1-xMnxTe thin films with different thicknesses are determined by analyzing the transmittance and reflectance data. The energy band gaps of the amorphous Mn-doped GeTe thin films with different thicknesses were calculated. The obtained results demonstrated that the energy band gap values of the amorphous films are quite different and they are dependent on the films thicknesses. The extinction coefficients of amorphous Mn-doped GeTe thin films as function of wavelength for different thicknesses were measured. The results showed that the extinction coefficients of all films are varying inversely with their optical transmission. Moreover, the results emphasis that, not only the microstructure, electrical and magnetic properties of Mn doped GeTe thin films vary with the films thicknesses but also the optical properties differ with the film thickness.
Abstract: Germanium Telluride based quaternary thin film switching devices with composition Ge15In5Te56Ag24, have been deposited in sandwich geometry on glass substrate with aluminum as top and bottom electrodes. The bulk glassy form of the said composition is prepared by melt quenching technique. In this technique, appropriate quantity of elements with high purity are taken in a quartz ampoule and sealed under a vacuum of 10-5 mbar. Then, it is allowed to rotate in a horizontal rotary furnace for 36 hours to ensure homogeneity of the melt. After that, the ampoule is quenched into a mixture of ice - water and NaOH to get the bulk ingot of the sample. The sample is then coated on a glass substrate using flash evaporation technique at a vacuum level of 10-6 mbar. The XRD report reveals the amorphous nature of the thin film sample and Energy - Dispersive X-ray Analysis (EDAX) confirms that the film retains the same chemical composition as that of the base sample. Electrical switching behavior of the device is studied with the help of Keithley (2410c) source-measure unit interfaced with Lab VIEW 7 (National Instruments). Switching studies, mainly SET (changing the state of the material from amorphous to crystalline) operation is conducted on the thin film form of the sample. This device is found to manifest memory switching as the device remains 'ON' even after the removal of the electric field. Also it is found that amorphous Ge15In5Te56Ag24 thin film unveils clean memory type of electrical switching behavior which can be justified by the absence of fluctuation in the I-V characteristics. The I-V characteristic also reveals that the switching is faster in this sample as no data points could be seen in the negative resistance region during the transition to on state and this leads to the conclusion of fast phase change during SET process. Scanning Electron Microscopy (SEM) studies are performed on the chosen sample to study the structural changes at the time of switching. SEM studies on the switched Ge15In5Te56Ag24 sample has shown some morphological changes at the place of switching wherein it can be explained that a conducting crystalline channel is formed in the device when the device switches from high resistance to low resistance state. From these studies it can be concluded that the material may find its application in fast switching Non-Volatile Phase Change Memory (PCM) Devices.
Abstract: Structural and UV/Visible optical properties can be
useful to describe a material for the CIGS solar cell active layer,
therefore, this work demonstrates the properties like surface
morphology, X-ray Photoelectron Spectroscopy (XPS) bonding
energy (EB) core level spectra, UV/Visible absorption spectra,
refractive index (n), optical energy band (Eg), reflection spectra for
the Cu25 (In16Ga9) Se40Te10 (CIGST-1) and Cu20 (In14Ga9) Se45Te12
(CIGST-2) chalcogenide compositions. Materials have been
exhibited homogenous surface morphologies, broading /-or diffusion
of bonding energy peaks relative elemental values and a high
UV/Visible absorption tendency in the wave length range 400 nm-
850 nm range with the optical energy band gaps 1.37 and 1.42
respectively. Subsequently, UV/Visible reflectivity property in the
wave length range 250 nm to 320 nm for these materials has also
been discussed.
Abstract: Ovshinsky initiated scientific research in the field of
amorphous and disordered materials that continues to this day. The
Ovshinsky Effect where the resistance of thin GST films is
significantly reduced upon the application of low voltage is of
fundamental importance in phase-change - random access memory
(PC-RAM) devices.GST stands for GdSbTe chalcogenide type
glasses.However, the Ovshinsky Effect is not without controversy.
Ovshinsky thought the resistance of GST films is reduced by the
redistribution of charge carriers; whereas, others at that time including
many PC-RAM researchers today argue that the GST resistance
changes because the GST amorphous state is transformed to the
crystalline state by melting, the heat supplied by external heaters. In
this controversy, quantum mechanics (QM) asserts the heat capacity of
GST films vanishes, and therefore melting cannot occur as the heat
supplied cannot be conserved by an increase in GST film
temperature.By precluding melting, QM re-opens the controversy
between the melting and charge carrier mechanisms. Supporting
analysis is presented to show that instead of increasing GST film
temperature, conservation proceeds by the QED induced creation of
photons within the GST film, the QED photons confined by TIR. QED
stands for quantum electrodynamics and TIR for total internal
reflection. The TIR confinement of QED photons is enhanced by the
fact the absorbedheat energy absorbed in the GST film is concentrated
in the TIR mode because of their high surface to volume ratio. The
QED photons having Planck energy beyond the ultraviolet produce
excitons by the photoelectric effect, the electrons and holes of which
reduce the GST film resistance.
Abstract: The selective wet-etching of amorphous and
crystalline region of Sb20Se80 thin films was carried out using organic
based solution e.g. amines. We report the development of an in situ
real-time method to study the wet chemical etching process of thin
films. Characterization of the structure and surface of films studied
by X-ray diffraction, SEM and EBSD methods has been done and
potential application suggested.
Abstract: A piston cylinder based high pressure differential
thermal analyzer system is developed to investigate phase
transformations, melting, glass transitions, crystallization behavior of
inorganic materials, glassy systems etc., at ambient to 4 GPa and at
room temperature to 1073 K. The pressure is calibrated by the phase
transition of bismuth and ytterbium and temperature is calibrated
by using thermocouple data chart. The system developed is
calibrated using benzoic acid, ammonium nitrate and it has a
pressure and temperature control of ± 8.9 x 10 -4 GPa , ± 2 K
respectively. The phase transition of Asx Te100-x chalcogenides,
ferrous oxide and strontium boride are studied using the
indigenously developed system.