Abstract: Germanium Telluride based quaternary thin film switching devices with composition Ge15In5Te56Ag24, have been deposited in sandwich geometry on glass substrate with aluminum as top and bottom electrodes. The bulk glassy form of the said composition is prepared by melt quenching technique. In this technique, appropriate quantity of elements with high purity are taken in a quartz ampoule and sealed under a vacuum of 10-5 mbar. Then, it is allowed to rotate in a horizontal rotary furnace for 36 hours to ensure homogeneity of the melt. After that, the ampoule is quenched into a mixture of ice - water and NaOH to get the bulk ingot of the sample. The sample is then coated on a glass substrate using flash evaporation technique at a vacuum level of 10-6 mbar. The XRD report reveals the amorphous nature of the thin film sample and Energy - Dispersive X-ray Analysis (EDAX) confirms that the film retains the same chemical composition as that of the base sample. Electrical switching behavior of the device is studied with the help of Keithley (2410c) source-measure unit interfaced with Lab VIEW 7 (National Instruments). Switching studies, mainly SET (changing the state of the material from amorphous to crystalline) operation is conducted on the thin film form of the sample. This device is found to manifest memory switching as the device remains 'ON' even after the removal of the electric field. Also it is found that amorphous Ge15In5Te56Ag24 thin film unveils clean memory type of electrical switching behavior which can be justified by the absence of fluctuation in the I-V characteristics. The I-V characteristic also reveals that the switching is faster in this sample as no data points could be seen in the negative resistance region during the transition to on state and this leads to the conclusion of fast phase change during SET process. Scanning Electron Microscopy (SEM) studies are performed on the chosen sample to study the structural changes at the time of switching. SEM studies on the switched Ge15In5Te56Ag24 sample has shown some morphological changes at the place of switching wherein it can be explained that a conducting crystalline channel is formed in the device when the device switches from high resistance to low resistance state. From these studies it can be concluded that the material may find its application in fast switching Non-Volatile Phase Change Memory (PCM) Devices.
Abstract: Graphene, a single-atom sheet, has been considered as
the most promising material for making future nanoelectromechanical
systems as well as purely electrical switching with graphene
transistors. Graphene-based devices have advantages in scaled-up
device fabrication due to the recent progress in large area graphene
growth and lithographic patterning of graphene nanostructures. Here
we investigated its mechanical responses of circular graphene
nanoflake under the nanoindentation using classical molecular
dynamics simulations. A correlation between the load and the
indentation depth was constructed. The nanoindented force in this
work was applied to the center point of the circular graphene nanoflake
and then, the resonance frequency could be tuned by a nanoindented
depth. We found the hardening or the softening of the graphene
nanoflake during its nanoindented-deflections, and such properties
were recognized by the shift of the resonance frequency. The
calculated mechanical parameters in the force-vs-deflection plot were
in good agreement with previous experimental and theoretical works.
This proposed schematics can detect the pressure via the deflection
change or/and the resonance frequency shift, and also have great
potential for versatile applications in nanoelectromechanical systems.
Abstract: Resistive Random Access Memory (RRAM) had received great amount of attention from various research efforts in recent years, owing to its promising performance as a next generation memory device. In this paper, samples based on TiN/HfOx/Pt stack were prepared and its electrical switching behaviors were characterized and discussed in brief.