The Effect of the Deposition Parameters on the Microstructural and Optical Properties of Mn-Doped GeTe Chalcogenide Materials
In this work, the effect of the magnetron sputtering system parameters on the optical properties of the Mn doped GeTe were investigated. The optical properties of the Ge1-xMnxTe thin films with different thicknesses are determined by analyzing the transmittance and reflectance data. The energy band gaps of the amorphous Mn-doped GeTe thin films with different thicknesses were calculated. The obtained results demonstrated that the energy band gap values of the amorphous films are quite different and they are dependent on the films thicknesses. The extinction coefficients of amorphous Mn-doped GeTe thin films as function of wavelength for different thicknesses were measured. The results showed that the extinction coefficients of all films are varying inversely with their optical transmission. Moreover, the results emphasis that, not only the microstructure, electrical and magnetic properties of Mn doped GeTe thin films vary with the films thicknesses but also the optical properties differ with the film thickness.
[1] S. Stoenescu, "Optical Characterization of Plasmonic Anisotropic Nanostructures by Modeling and Spectroscopic Verification," Concordia University, 2013.
[2] X. Cao, Y. Luo, Y. Zhou, J. Fan, X. Xu, J. S. West, X. Duan, and D. Cheng, "Detection of Powdery Mildew in Two Winter Wheat Plant Densities and Prediction of Grain Yield Using Canopy Hyperspectral Reflectance," PloS one, vol. 10, p. e0121462, 2015.
[3] M. Abd-Elrahman, R. M. Khafagy, S. A. Zaki, and M. Hafiz, "Characterization of optical constants of Se 30 Te 70 thin film: Effect of the thickness," Materials Science in Semiconductor Processing, vol. 18, pp. 1-5, 2014.
[4] M. Iovu, E. Colomeico, V. Benea, and D. Harea, "Characterzation of Ge-Sb-Te phase-change memory materials," in Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2012, 2012, pp. 841103-841103-6.
[5] R. Todorov, A. Lalova, and J. Tasseva, "Thickness dependence of the optical properties of amorphous As-Ge-S thin films," 2013.
[6] G. Kaur and T. Komatsu, "Crystallization behavior of bulk amorphous Se-Sb-In system," Journal of materials science, vol. 36, pp. 4531-4533, 2001.
[7] Y. Zhang, G. Li, B. Zhang, and L. Zhang, "Synthesis and characterization of hollow Sb 2 Se 3 nanospheres," Materials Letters, vol. 58, pp. 2279-2282, 2004.
[8] A. Diab, M. Wakkad, E. K. Shokr, and W. Mohamed, "Structural and optical properties of In 35 Sb 45 Se 20− x Te x phase-change thin films," Journal of Physics and Chemistry of Solids, vol. 71, pp. 1381-1387, 2010.
[9] X. Miao, T. Chong, Y. Huang, K. Lim, P. Tan, and L. Shi, "Dependence of optical constants on film thickness of phase-change media," Japanese journal of applied physics, vol. 38, p. 1638, 1999.
[10] W. Chen, S. Lim, C. Sim, J. Bi, K. Teo, T. Liew, and T. Chong, "Optical, magnetic, and transport behaviors of Ge1-xMnxTe ferromagnetic semiconductors grown by molecular-beam epitaxy," Journal of Applied Physics, vol. 104, p. 63912, 2008.
[11] M. Cardona and D. L. Greenaway, "Optical properties and band structure of group IV-VI and group V materials," Physical Review, vol. 133, p. A1685, 1964.
[12] M. Averous and M. Balkanski, Semimagnetic semiconductors and diluted magnetic semiconductors vol. 55: Springer Science & Business Media, 2012.
[13] A. A. E. Adam, X. Cheng, and X. Miao, "Thickness dependence and magnetization behavior of Mn-doped GeTe phase change materials," Journal of Materials Science: Materials in Electronics, vol. 26, pp. 5202-5208, 2015.
[14] A. Zaidan, V. Ivanova, and P. Petkov, "Optical properties of chalcogenide Ge-Te-In thin films," in Journal of Physics: Conference Series, 2012, p. 012014.
[15] D. Singh, S. Kumar, R. Thangaraj, and T. Sathiaraj, "Influence of thickness on optical properties of a-(Se 80 Te 20) 96 Ag 4 thin films," Physica B: Condensed Matter, vol. 408, pp. 119-125, 2013.
[16] B.-S. Lee, J. R. Abelson, S. G. Bishop, D.-H. Kang, B.-k. Cheong, and K.-B. Kim, "Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases," Journal of Applied Physics, vol. 97, p. 093509, 2005.
[1] S. Stoenescu, "Optical Characterization of Plasmonic Anisotropic Nanostructures by Modeling and Spectroscopic Verification," Concordia University, 2013.
[2] X. Cao, Y. Luo, Y. Zhou, J. Fan, X. Xu, J. S. West, X. Duan, and D. Cheng, "Detection of Powdery Mildew in Two Winter Wheat Plant Densities and Prediction of Grain Yield Using Canopy Hyperspectral Reflectance," PloS one, vol. 10, p. e0121462, 2015.
[3] M. Abd-Elrahman, R. M. Khafagy, S. A. Zaki, and M. Hafiz, "Characterization of optical constants of Se 30 Te 70 thin film: Effect of the thickness," Materials Science in Semiconductor Processing, vol. 18, pp. 1-5, 2014.
[4] M. Iovu, E. Colomeico, V. Benea, and D. Harea, "Characterzation of Ge-Sb-Te phase-change memory materials," in Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2012, 2012, pp. 841103-841103-6.
[5] R. Todorov, A. Lalova, and J. Tasseva, "Thickness dependence of the optical properties of amorphous As-Ge-S thin films," 2013.
[6] G. Kaur and T. Komatsu, "Crystallization behavior of bulk amorphous Se-Sb-In system," Journal of materials science, vol. 36, pp. 4531-4533, 2001.
[7] Y. Zhang, G. Li, B. Zhang, and L. Zhang, "Synthesis and characterization of hollow Sb 2 Se 3 nanospheres," Materials Letters, vol. 58, pp. 2279-2282, 2004.
[8] A. Diab, M. Wakkad, E. K. Shokr, and W. Mohamed, "Structural and optical properties of In 35 Sb 45 Se 20− x Te x phase-change thin films," Journal of Physics and Chemistry of Solids, vol. 71, pp. 1381-1387, 2010.
[9] X. Miao, T. Chong, Y. Huang, K. Lim, P. Tan, and L. Shi, "Dependence of optical constants on film thickness of phase-change media," Japanese journal of applied physics, vol. 38, p. 1638, 1999.
[10] W. Chen, S. Lim, C. Sim, J. Bi, K. Teo, T. Liew, and T. Chong, "Optical, magnetic, and transport behaviors of Ge1-xMnxTe ferromagnetic semiconductors grown by molecular-beam epitaxy," Journal of Applied Physics, vol. 104, p. 63912, 2008.
[11] M. Cardona and D. L. Greenaway, "Optical properties and band structure of group IV-VI and group V materials," Physical Review, vol. 133, p. A1685, 1964.
[12] M. Averous and M. Balkanski, Semimagnetic semiconductors and diluted magnetic semiconductors vol. 55: Springer Science & Business Media, 2012.
[13] A. A. E. Adam, X. Cheng, and X. Miao, "Thickness dependence and magnetization behavior of Mn-doped GeTe phase change materials," Journal of Materials Science: Materials in Electronics, vol. 26, pp. 5202-5208, 2015.
[14] A. Zaidan, V. Ivanova, and P. Petkov, "Optical properties of chalcogenide Ge-Te-In thin films," in Journal of Physics: Conference Series, 2012, p. 012014.
[15] D. Singh, S. Kumar, R. Thangaraj, and T. Sathiaraj, "Influence of thickness on optical properties of a-(Se 80 Te 20) 96 Ag 4 thin films," Physica B: Condensed Matter, vol. 408, pp. 119-125, 2013.
[16] B.-S. Lee, J. R. Abelson, S. G. Bishop, D.-H. Kang, B.-k. Cheong, and K.-B. Kim, "Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases," Journal of Applied Physics, vol. 97, p. 093509, 2005.
@article{"International Journal of Electrical, Electronic and Communication Sciences:73118", author = "Adam Abdalla Elbashir Adam and Xiaomin Cheng and Xiang Shui Miao", title = "The Effect of the Deposition Parameters on the Microstructural and Optical Properties of Mn-Doped GeTe Chalcogenide Materials ", abstract = "In this work, the effect of the magnetron sputtering system parameters on the optical properties of the Mn doped GeTe were investigated. The optical properties of the Ge1-xMnxTe thin films with different thicknesses are determined by analyzing the transmittance and reflectance data. The energy band gaps of the amorphous Mn-doped GeTe thin films with different thicknesses were calculated. The obtained results demonstrated that the energy band gap values of the amorphous films are quite different and they are dependent on the films thicknesses. The extinction coefficients of amorphous Mn-doped GeTe thin films as function of wavelength for different thicknesses were measured. The results showed that the extinction coefficients of all films are varying inversely with their optical transmission. Moreover, the results emphasis that, not only the microstructure, electrical and magnetic properties of Mn doped GeTe thin films vary with the films thicknesses but also the optical properties differ with the film thickness.
", keywords = "Phase change magnetic materials, transmittance, absorbance, extinction coefficients. ", volume = "10", number = "5", pages = "689-4", }
