Abstract: This paper reports on the impact study with the variation of the gate insulation material and thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate materials used here are silicon dioxide (SiO2), aluminum silicate (Al2SiO5), silicon nitride (Si3N4), alumina (Al2O3), hafnium silicate (HfSiO4), tantalum pentoxide (Ta2O5), hafnium dioxide (HfO2), zirconium dioxide (ZrO2), and lanthanum oxide (La2O3) upon a p-type silicon substrate material. The gate insulation thickness was varied from 2.0 nm to 3.5 nm for a 50 nm channel length pocket implanted n-MOSFET. There are several models available for this device. We have studied and simulated threshold voltage model incorporating drain and substrate bias effects, surface potential, inversion layer charge, pinch-off voltage, effective electric field, inversion layer mobility, and subthreshold drain current models based on two linear symmetric pocket doping profiles. We have changed the values of the two parameters, viz. gate insulation material and thickness gradually fixing the other parameter at their typical values. Then we compared and analyzed the simulation results. This study would be helpful for the nano-scaled MOS device designers for various applications to predict the device behavior.
Abstract: The deployable descent technology is a lightweight entry method using an inflatable heat shield. The heatshield consists of a pressurized core which is covered by different layers of thermal insulation and flexible ablative materials in order to protect against the thermal loads. In this paper, both aluminum and silicon-aluminum aerogels were prepared by freeze-drying method. The latter material has bigger specific surface area and nano-scale pores. Mullite fibers are used as the reinforcing fibers to prepare the aerogel matrix to improve composite flexibility. The flexible composite materials were performed as an insulation layer to an underlying aramid fabric by a thermal shock test at a heat flux density of 120 kW/m2 and uniaxial tensile test. These results show that the aramid fabric with untreated mullite fibers as the thermal protective layer is completely carbonized at the heat of about 60 s. The aramid fabric as a thermal resistance layer of the composite material still has good mechanical properties at the same heat condition.
Abstract: The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.
Abstract: Finishing is an important part of fabric processing with which a wide range of features are imparted to greige or colored fabrics for various end-uses. Especially, by the addition or impartation of nano-scaled particles to the fabric structure composite fabrics, a kind of composite materials can be acquired. Composite materials, generally shortened as composites or in other words composition materials, are engineered or naturally occurring materials made from two or more component materials with significantly different physical, mechanical or chemical characteristics remaining separate and distinctive at the macroscopic or microscopic scale within the end product structure. Therefore, the technique finishing which is one of the fundamental methods to be applied on fabrics for obtainment of composite fabrics with many functionalities was used in the current study with the same purpose. However, regardless of the finishing materials applied, the efficient life of finished product on offering desired feature is low, since the durability of finishes on the material is limited. Any increase in durability of these finishes on textiles would enhance the life of use for textiles, which will result in happier users. Therefore, in this study, since higher durability was desired for the finishing materials fixed on the fabrics, nano-scaled hollow structured cyclodextrins were chemically imparted by grafting to the structure of conventional cotton fabrics by the help of finishing technique in order to be fixed permanently. By this way, a processed and functionalized base fabric having potential to be treated in the subsequent processes with many different finishing agents and nanomaterials could be obtained. Henceforth, this fabric can be used as a multi-functional fabric due to the encapturing ability of cyclodextrins to molecules/particles via physical/chemical means. In this study, scoured and rinsed woven bleached plain weave 100% cotton fabrics were utilized because textiles made of cotton are the most demanded textile products in the textile market by the textile consumers in daily life. Cotton fabric samples were immersed in treating baths containing β-cyclodextrin and 1,2,3,4-butanetetracarboxylic acid and to reduce the curing temperature the catalyst sodium hypophosphite monohydrate was used. All impregnated fabric samples were pre-dried. The reaction of grafting was performed in dry state. The treated and cured fabric samples were rinsed with warm distilled water and dried. The samples were dried for 4 h and weighed before and after finishing and rinsing. Stability and durability of β-cyclodextrins on fabric surface against external factors such as washing as well as strength of functionalized fabric in terms of tensile and tear strength were tested. Presence and homogeneity of distribution of β-cyclodextrins on fabric surface were characterized.
Abstract: The thermoelectric properties of nano-scaled In2O3:Sn films deposited by spray pyrolysis are considered in the present report. It is shown that multicomponent In2O3:Sn-based films are promising material for the application in thermoelectric devices. It is established that the increase in the efficiency of thermoelectric conversion at CSn~5% occurred due to nano-scaled structure of the films studied and the effect of the grain boundary filtering of the low energy electrons. There are also analyzed the limitations that may appear during such material using in devices developed for the market of thermoelectric generators and refrigerators. Studies showed that the stability of nano-scaled film’s parameters is the main problem which can limit the application of these materials in high temperature thermoelectric converters.
Abstract: In this paper, we present and investigate a double gate PN diode based tunnel field effect transistor (DGPNTFET). The importance of proposed structure is that the formation of different drain doping is not required and ambipolar effect in OFF state is completely removed for this structure. Validation of this structure to behave like a Tunnel Field Effect Transistor (TFET) is carried out through energy band diagrams and transfer characteristics. Simulated result shows point subthreshold slope (SS) of 19.14 mV/decade and ON to OFF current ratio (ION / IOFF) of 2.66 × 1014 (ION at VGS=1.5V, VDS=1V and IOFF at VGS=0V, VDS=1V) for gate length of 20nm and HfO2 as gate oxide at room temperature. Which indicate that the DGPNTFET is a promising candidate for nano-scale, ambipolar free switch.
Abstract: In this paper, we present an analytical method for
analysis of nano-scale spherical shell subjected to thermo-mechanical
shocks based on nonlocal elasticity theory. Thermo-mechanical
properties of nano shpere is assumed to be temperature dependent.
Governing partial differential equation of motion is solved
analytically by using Laplace transform for time domain and power
series for spacial domain. The results in Laplace domain is
transferred to time domain by employing the fast inverse Laplace
transform (FLIT) method. Accuracy of present approach is assessed
by comparing the the numerical results with the results of published
work in literature. Furtheremore, the effects of non-local parameter
and wall thickness on the dynamic characteristics of the nano-sphere
are studied.
Abstract: As the Silicon oxide scaled down in MOSFET
technology to few nanometers, gate Direct Tunneling (DT) in
Floating gate (FGMOSFET) devices has become a major concern for
analog designers. FGMOSFET has been used in many low-voltage
and low-power applications, however, there is no accurate model that
account for DT gate leakage in nano-scale. This paper studied and
analyzed different simulation models for FGMOSFET using TSMC
90-nm technology. The simulation results for FGMOSFET cascade
current mirror shows the impact of DT on circuit performance in
terms of current and voltage without the need for fabrication. This
works shows the significance of using an accurate model for
FGMOSFET in nan-scale technologies.
Abstract: Optical radiation emitted from a metal-coated fiber tip apex at liquid-air interface was measured. The intensity of the output radiation was strongly depend on the relative position of the tip to a liquid-air interface and varied with surface fluctuations. This phenomenon permits in-situ real-time investigation of nano-metric vibrations of the liquid surface and provides a basis for development of various origin ultrasensitive vibration detecting sensors. The described method can be used for detection of week seismic vibrations.
Abstract: Blood gamma irradiation is the only available method
to prevent transfusion associated graft versus host disease (TAGVHD).
However, when blood is irradiated, determine blood shelf
time is crucial. Non irradiated blood have a self-time from 21 to 35
days when is preserved with anticoagulated solution and stored at
4°C. During their storage, red blood cells (RBC) undergo a series of
biochemical, biomechanical and molecular changes involving what is
known as storage lesion (SL). SL include loss of structural integrity
of RBC, decrease of 2,3-diphosphatidylglyceric acid levels, and
increase of both ion potassium concentration and hemoglobin (Hb).
On the other hand, Atomic force Microscopy (AFM) represents a
versatile tool for a nano-scale high resolution topographic analysis in
biological systems. In order to evaluate SL in irradiated and nonirradiated
blood, RBC topography and morphometric parameters
were obtained from an AFM XE-BIO system. Cell viability was
followed using flow cytometry. Our results showed that early
markers as nanoscale roughness, allow us to evaluate blood quality
since other perspective.
Abstract: In this study, the Mo-electrode thin films were deposited using two-stepped process and the high purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by using hydrothermal process by Nanowin Technology Co. Ltd. Because the CIS powder was aggregated into microscale particles, the CIS power was ground into nano-scale particles. 6 wt% CIS particles were mixed and dispersed into isopropyl alcohol (IPA). A new non-vacuum thin-film deposition process, spray coating method (SPM), was investigated to deposit the high-densified CIS absorber layers. 0.1 ml CIS solution was sprayed on the 20 mm×10 mm Mo/glass substrates and then the CuInSe2 thin films were annealed in a selenization furnace using N2 as atmosphere. The annealing temperature and time were set at 550oC and 5 min, and 0.0g~0.6g extra Se content was added in the furnace. The influences of extra Se content on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.
Abstract: The energy-level structure of a pair of electron and positron confined in a quasi-one-dimensional nano-scale potential well has been investigated focusing on its trend in the small limit of confinement strength ω, namely, the Wigner molecular regime. An anisotropic Gaussian-type basis functions supplemented by high angular momentum functions as large as l = 19 has been used to obtain reliable full configuration interaction (FCI) wave functions. The resultant energy spectrum shows a band structure characterized by ω for the large ω regime whereas for the small ω regime it shows an energy-level pattern dominated by excitation into the in-phase motion of the two particles. The observed trend has been rationalized on the basis of the nodal patterns of the FCI wave functions.
Abstract: To help overcome limits to the density of conventional SRAMs and leakage current of SRAM cell in nanoscaled CMOS technology, we have developed a four-transistor SRAM cell. The newly developed CMOS four-transistor SRAM cell uses one word-line and one bit-line during read/write operation. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 19% smaller than a conventional six-transistor cell using same design rules. Also the leakage current of new cell is 60% smaller than a conventional sixtransistor SRAM cell. Simulation result in 65nm CMOS technology shows new cell has correct operation during read/write operation and idle mode.
Abstract: Carriers scattering in the inversion channel of n-
MOSFET dominates the drain current. This paper presents an effective
electron mobility model for the pocket implanted nano scale
n-MOSFET. The model is developed by using two linear pocket
profiles at the source and drain edges. The channel is divided into
three regions at source, drain and central part of the channel region.
The total number of inversion layer charges is found for these three
regions by numerical integration from source to drain ends and the
number of depletion layer charges is found by using the effective
doping concentration including pocket doping effects. These two
charges are then used to find the effective normal electric field,
which is used to find the effective mobility model incorporating the
three scattering mechanisms, such as, Coulomb, phonon and surface
roughness scatterings as well as the ballistic phenomena for the
pocket implanted nano-scale n-MOSFET. The simulation results show
that the derived mobility model produces the same results as found
in the literatures.
Abstract: This paper presents an adaptive technique for generation
of data required for construction of artificial neural network-based
performance model of nano-scale CMOS inverter circuit. The training
data are generated from the samples through SPICE simulation. The
proposed algorithm has been compared to standard progressive sampling
algorithms like arithmetic sampling and geometric sampling.
The advantages of the present approach over the others have been
demonstrated. The ANN predicted results have been compared with
actual SPICE results. A very good accuracy has been obtained.
Abstract: This paper proposes, for the first time, how the
challenges facing the guard-band designs including the margin
assist-circuits scheme for the screening-test in the coming process
generations should be addressed. The increased screening error
impacts are discussed based on the proposed statistical analysis
models. It has been shown that the yield-loss caused by the
misjudgment on the screening test would become 5-orders of
magnitude larger than that for the conventional one when the
amplitude of random telegraph noise (RTN) caused variations
approaches to that of random dopant fluctuation. Three fitting methods
to approximate the RTN caused complex Gamma mixtures
distributions by the simple Gaussian mixtures model (GMM) are
proposed and compared. It has been verified that the proposed
methods can reduce the error of the fail-bit predictions by 4-orders of
magnitude.
Abstract: Each new semiconductor technology node
brings smaller transistors and wires. Although this makes
transistors faster, wires get slower. In nano-scale regime, the
standard copper (Cu) interconnect will become a major hurdle
for FPGA interconnect due to their high resistivity and
electromigration. This paper presents the comprehensive
evaluation of mixed CNT bundle interconnects and
investigates their prospects as energy efficient and high speed
interconnect for future FPGA routing architecture. All
HSPICE simulations are carried out at operating frequency of
1GHz and it is found that mixed CNT bundle implemented in
FPGAs as interconnect can potentially provide a substantial
delay and energy reduction over traditional interconnects at
32nm process technology.
Abstract: This research aims at modeling and simulating the effects of nanofluids on cylindrical heat pipes thermal performance using the ANSYS-FLUENT CFD commercial software. The heat pipe outer wall temperature distribution, thermal resistance, liquid pressure and axial velocity in presence of suspended nano-scaled solid particle (i.e. Cu, Al2O3 and TiO2) within the fluid (water) were investigated. The effect of particle concentration and size were explored and it is concluded that the thermal performance of the heat pipe is improved when using nanofluid as the system working fluid. Additionally, it was observed that the thermal resistance of the heat pipe drops as the particle concentration level increases and particle radius decreases.
Abstract: Nanotechnology is the science of creating, using and
manipulating objects which have at least one dimension in range of
0.1 to 100 nanometers. In other words, nanotechnology is
reconstructing a substance using its individual atoms and arranging
them in a way that is desirable for our purpose.
The main reason that nanotechnology has been attracting
attentions is the unique properties that objects show when they are
formed at nano-scale. These differing characteristics that nano-scale
materials show compared to their nature-existing form is both useful
in creating high quality products and dangerous when being in
contact with body or spread in environment.
In order to control and lower the risk of such nano-scale particles,
the main following three topics should be considered:
1) First of all, these materials would cause long term diseases that
may show their effects on body years after being penetrated in human
organs and since this science has become recently developed in
industrial scale not enough information is available about their
hazards on body.
2) The second is that these particles can easily spread out in
environment and remain in air, soil or water for very long time,
besides their high ability to penetrate body skin and causing new
kinds of diseases.
3) The third one is that to protect body and environment against
the danger of these particles, the protective barriers must be finer than
these small objects and such defenses are hard to accomplish.
This paper will review, discuss and assess the risks that human and
environment face as this new science develops at a high rate.