Abstract: Carriers scattering in the inversion channel of n-
MOSFET dominates the drain current. This paper presents an effective
electron mobility model for the pocket implanted nano scale
n-MOSFET. The model is developed by using two linear pocket
profiles at the source and drain edges. The channel is divided into
three regions at source, drain and central part of the channel region.
The total number of inversion layer charges is found for these three
regions by numerical integration from source to drain ends and the
number of depletion layer charges is found by using the effective
doping concentration including pocket doping effects. These two
charges are then used to find the effective normal electric field,
which is used to find the effective mobility model incorporating the
three scattering mechanisms, such as, Coulomb, phonon and surface
roughness scatterings as well as the ballistic phenomena for the
pocket implanted nano-scale n-MOSFET. The simulation results show
that the derived mobility model produces the same results as found
in the literatures.